Degradation Behavior and Trap Analysis Based on Low-Frequency Noise of AlGaN/GaN HEMTs Subjected to Radio Frequency Overdrive Stress

Chen, Qiang; Chen, Y. Q.; Liu, Chang; Geng, Kuiwei; He, Yuhui; Gao, Rui; Huang, Yun; Yang, Xiaodong

doi:10.1109/ted.2020.3040698

Cited by 10 publications

(7 citation statements)

References 29 publications

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“…As we seen, the degradation phenomenon of devices after long-term RF overdrive stress is consistent with previous literature [4], [20], [21], so it can be considered that this is still a degradation mechanism dominated by HEE. RF overdrive stress generates a strong electric field in the channel of the device, which causes the channel electrons to acquire energy and become hot electrons.…”

Section: B Degradation Behaviors and Mechanism Analysis After A Long-...supporting

confidence: 91%

“…On the other hand, new defects are generated under the gate or in the gate-drain access area, which reduces the output current and make the threshold voltage is drifts forward, as shown in Fig. 7 (a) and (b) [4], [34], [35]. At last, when Pin is further increased, the electric field strength between gate and drain exceeds the breakdown electric field strength of GaN material, resulting in burnout.…”

Section: F Mechanism Analysis Of Burnout Behaviors Of Gan Hemtmentioning

confidence: 99%

“…components, in which GaN HEMTs play the role of the last stage power amplifier. In order to ensure a high output power, most of the components tend to work in saturation state, but due to the differences between components, some components may be under the influence of RF overdrive stress, thus affecting the reliability of the components [4]- [7]. In addition, high power microwave based on electronic warfare can also cause devices to be in RF overdrive state [8], [9].…”

Section: Introductionmentioning

confidence: 99%

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RF Overdrive Burnout Behavior and Mechanism Analysis of GaN HEMTs Based on High Speed Camera

Liu

Chen

et al. 2023

IEEE J. Electron Devices Soc.

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In this work, a new method for failure analysis of electronic components, high speed camera, is used to investigate burnout failure location of GaN HEMTs under RF overdrive stress. Based on the high speed camera system and the RF test system, we can filter out most of the burn flashes, and clearly locate the weak parts of devices. To further explain the burnout mechanism, a long-term (100 h) RF overdrive stress experiment was carried out and the significant degradation was observed. The drain-source current decreases and the threshold voltage drifts forward. These phenomena show that the degradation of RF overdrive stress is based on hot electron effect (HEE), which is related to the electric field. Besides, Electroluminescence (EL) tests are used and the non-uniform but strong luminescence characteristics of the gate were found, which indicates the strong electric field is the main cause of burnout. We also explore the correlation between burnout and ambient temperature. It was found that the influence of ambient temperature on the burnout was limited. At last, a TCAD simulation is carried out to confirm the temperature and electric field distribution in the device when burnout. It can be found that the electric field inside the device exceeded the breakdown electric field of GaN, which further proves that the burnout caused by RF overdrive is mainly due to electric field rather than temperature.

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Section: B Degradation Behaviors and Mechanism Analysis After A Long-...supporting

confidence: 91%

Section: F Mechanism Analysis Of Burnout Behaviors Of Gan Hemtmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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RF Overdrive Burnout Behavior and Mechanism Analysis of GaN HEMTs Based on High Speed Camera

Liu

Chen

et al. 2023

IEEE J. Electron Devices Soc.

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“…[6] In addition, recessed-gate GaN HEMTs typically illustrate a decreased carrier mobility due to the inevitable etching-induced damages, [7,8] together resulting in a serious increase in R ON and the shift of V TH . [9,10] To avoid the previously cited challenges, the dual-channel (DC) GaN HEMT has been demonstrated as an effective workaround. [11] Such devices can greatly alleviate the nonlinearity of resistances under the high current and the sensitivity of the cutoff frequency to external bias, thus enhancing the device linearity.…”

Section: Introductionmentioning

confidence: 99%

“…[ 6 ] In addition, recessed‐gate GaN HEMTs typically illustrate a decreased carrier mobility due to the inevitable etching‐induced damages, [ 7,8 ] together resulting in a serious increase in R ON and the shift of V TH . [ 9,10 ]…”

Section: Introductionmentioning

confidence: 99%

Theoretical Studies of 2D Electron Gas Distributions and Scattering Characteristics in Double‐Channel n‐Al_0.3Ga_0.7N/GaN/i‐Al_xGa_1−xN/GaN High‐Electron‐Mobility Transistors

Cai,

Yao,

Geng

2024

Physica Status Solidi (a)

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A detailed analysis of self‐consistent potentials, electric fields, electron distributions, and transport properties of dual‐channel (DC) n‐Al0.3Ga0.7N/GaN/i‐AlxGa1−xN/GaN high‐electron‐mobility transistors (HEMTs) is performed in this article. The 2D electron gas (2DEG) densities and mobility states limited by different scattering mechanisms in channel 1 and channel 2 are obtained, with varying values of doping concentrations, ambient temperatures, Al components, and thicknesses of the back barrier layer. The reduced and increased 2DEG densities are respectively observed in channel 1 and channel 2 with growing Al fractions and thicknesses of the AlxGa1−xN layer. Alloy disorder scattering exhibits a superior effect on carriers in channel 2 due to the lower barrier height and higher permeable electrons, which together with the interface roughness scattering severely depends on the thicknesses and Al fractions of the back barrier layer. Polar optical phonon scattering becomes important at higher temperatures. The trend of individual mobility in channel 1 is exactly opposite to that in channel 2. The parameter variation of the back barrier layer can effectively change the scattering characteristics of the main channel. Low‐temperature mobilities of n‐Al0.3Ga0.7N/GaN/i‐AlxGa1−xN/GaN HEMTs under varied doping concentrations are also obtained. Finally, the results are verified by comparison with the technology computer‐aided design simulations for DC HEMTs.

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Effect of Fe Doping Profile on Current Collapse in GaN‐based RF HEMTs

Xu,

Guo,

Tao

et al. 2024

Chemistry A European J

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Using computer‐aided design (TCAD) simulation, the impact of the Fe doping profile, including concentration, decay rate, and depth of the doping region on current‐collapse magnitude (∆CC) in 0.5‐μm gated GaN‐based high electron mobility transistors (HEMTs) is systematically investigated. Accurate simulation models are established and developed to facilitate the fabrication of electronics. It is elucidated that the intricate interplay between trapping and de‐trapping of Fe‐related traps at the gate‐drain edge is responsible for current collapse. The concentration and decay rate of the doping region have a more significant impact on current collapse than the depth. Increased trap state density near two‐dimensional electron gas (2DEG) channel caused by deep‐level acceptors would boost ∆CC. However, a minor dynamic reduction in 2DEG density (nT) induces a relatively small ∆CC. By adjusting the concentration, decay rate, and depth of the doping region, ∆CC of GaN‐based Radio Frequency (RF) HEMTs can be reduced by approximately 50.3%.The optimized distribution of Fe doping discussed in this work helps to prepare GaN‐based RF HEMTs with a limited current collapse effect.

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Degradation Behavior and Trap Analysis Based on Low-Frequency Noise of AlGaN/GaN HEMTs Subjected to Radio Frequency Overdrive Stress

Cited by 10 publications

References 29 publications

RF Overdrive Burnout Behavior and Mechanism Analysis of GaN HEMTs Based on High Speed Camera

RF Overdrive Burnout Behavior and Mechanism Analysis of GaN HEMTs Based on High Speed Camera

Theoretical Studies of 2D Electron Gas Distributions and Scattering Characteristics in Double‐Channel n‐Al_0.3Ga_0.7N/GaN/i‐Al_xGa_1−xN/GaN High‐Electron‐Mobility Transistors

Effect of Fe Doping Profile on Current Collapse in GaN‐based RF HEMTs

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Degradation Behavior and Trap Analysis Based on Low-Frequency Noise of AlGaN/GaN HEMTs Subjected to Radio Frequency Overdrive Stress

Cited by 10 publications

References 29 publications

RF Overdrive Burnout Behavior and Mechanism Analysis of GaN HEMTs Based on High Speed Camera

RF Overdrive Burnout Behavior and Mechanism Analysis of GaN HEMTs Based on High Speed Camera

Theoretical Studies of 2D Electron Gas Distributions and Scattering Characteristics in Double‐Channel n‐Al0.3Ga0.7N/GaN/i‐AlxGa1−xN/GaN High‐Electron‐Mobility Transistors

Effect of Fe Doping Profile on Current Collapse in GaN‐based RF HEMTs

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Theoretical Studies of 2D Electron Gas Distributions and Scattering Characteristics in Double‐Channel n‐Al_0.3Ga_0.7N/GaN/i‐Al_xGa_1−xN/GaN High‐Electron‐Mobility Transistors