Deformation behaviour and dislocation formation in undoped and doped (Zn, S)InP crystals

Dislocation multiplication in GaAs : inhibition by doping

“…These questions have not yet been addressed, in detail, in GaAs, by comparing the properties of deformed and as-grown materials. This global approach has been used recently in a short study on InP [13].…”

Crystal Pulling from the Melt

“…The limitation of this approach is that it ignores the fact that the generation and movement of dislocations in semiconductors is a thermally activated process. Further, the CRSS is a function, not only of the temperature, but also of the strain rate as shown by Muller et al [207]. Lambropoulos [208] deduced, from simulation studies, that once the crystal length had reached about four times its radius, all the significant stress variation occurred close to the interface and the extent of inelastic deformation was so large that it needed to be coupled into the solution for the thermal stresses near the crystal-melt interface.…”

Erlangen—An Important Center of Crystal Growth and Epitaxy: Major Scientific Results and Technological Solutions of the Last Four Decades

“…This study started already during Völkls’ diploma work in which he measured for the first time in situ the temperature distribution within a growing InP crystal by the use of grown‐in thermocouples. A second important part of the work was the investigation of the plastic deformation of InP crystals by dynamical compression testing experiments at high temperatures in collaboration with the Erlangen group of Wolfgang Blum …”