Defects Produced in Silicon by Reactive Ion Etching

Effect of Stress on Creation of Defects in Annealed Czochralski Grown Silicon

“…2, sample C). In the samples treated at even higher temperature±pressure (1400 K±1.2 GPa), there was detected a very weak dislocation-related D1 line but also a weak broad PL line at about 0.97 eV, possibly related to presence of intrinsic point defects [8]. It is worth to note that no detectable exciton PL at about 1.1 eV was found for the HT±HP treated Cz-Si samples.…”