1968
DOI: 10.1103/physrev.175.1091
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Defects in Rutile. I. Electron Paramagnetic Resonance of Interstitially Dopedn-Type Rutile

Abstract: Rutile crystals which were doped by heating in contact with Li, Na, K, Ti, or H 2 were examined with x-band electron paramagnetic resonance at about 2°K. The same spectrum was seen as was previously reported for hydrogen-reduced samples. Experimental results and lattice-potential calculations are used to show that the defect is Ti 3+ located at the J0| interstitial site. The Ti 3+ result from interstitial Ti 4+ trapping conduction electrons below 8°K. Li-doping experiments in particular show that Ti 4+ must be… Show more

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Cited by 61 publications
(14 citation statements)
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“…These states originate from surface or lattice defects. The majority of published work [7,[20][21][22][23] indicates that these states correspond to the absence of oxygen atoms (V O ) and are 0.5-0.8 eV below the conduction band [21,23]. The radiative recombination could occur either with the photogenerated holes (in the "bulk") or with surface holes ({Ti IV -O 2− -Ti IV }-O • ).…”
Section: Resultsmentioning
confidence: 99%
“…These states originate from surface or lattice defects. The majority of published work [7,[20][21][22][23] indicates that these states correspond to the absence of oxygen atoms (V O ) and are 0.5-0.8 eV below the conduction band [21,23]. The radiative recombination could occur either with the photogenerated holes (in the "bulk") or with surface holes ({Ti IV -O 2− -Ti IV }-O • ).…”
Section: Resultsmentioning
confidence: 99%
“…[3][4][5][6][7] Many of the previous investigations of defects have focused on reduced crystals where oxygen vacancies, introduced during or after growth, significantly increase the electrical conductivity. [8][9][10][11] In contrast, our current report describes results obtained from colorless ͑fully oxidized͒ TiO 2 crystals that contain small concentrations of doubly ionized oxygen vacancies. These doubly ionized vacancies provide charge compensation for the trace amounts of trivalent transition-metal-ion impurities that are inadvertently present.…”
mentioning
confidence: 82%
“…Conversely, under reducing conditions, one expects V O and Ti i to have the lowest formation energies [224,225]. Electron paramagnetic resonance spectroscopy (EPR) studies report on the presence of V O [167,[226][227][228] as well as Ti i [229,230]. However, the assignment of a certain EPR signature to Ti i has been disputed [231], and hence it is still under debate if Ti i is present in typical r-TiO 2 samples.…”
Section: Defects In Rutile Titanium Dioxidementioning
confidence: 99%