2006
DOI: 10.1007/s10895-006-0080-1
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Characterization of TiO2 Nanoparticles in Langmuir-Blodgett Films

Abstract: In this work we have synthesized TiO2 nanoparticles, using either a sol-gel base catalysed process in the interior of CTAB reversed micelles (TiO2 CTAB sol), or the neutralization of a TiO2/H2SO4 solution in the interior of AOT reversed micelles. From the absorption and emission data of the TiO2 nanoparticles it is possible to conclude that in the sol-gel route there remains alkoxide groups in the structure, originating transitions lower than the energy gap of TiO2 semiconductor. These transitions disappear in… Show more

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Cited by 13 publications
(9 citation statements)
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“…[9,10] Several different strategies have been developed to prepare uniform and high-quality TiO 2 thin films, including chemical vapor deposition, [11] sputtering, [12] sol-gel process, [13] dip-coating techniques, [14] and Langmuir-Blodgett (LB) method. [15] However, there are several inherent limitations associated with these methods, such as expensive fabrication equipment, high temperature, film non-uniformity and low mechanical instability.…”
Section: Introductionmentioning
confidence: 99%
“…[9,10] Several different strategies have been developed to prepare uniform and high-quality TiO 2 thin films, including chemical vapor deposition, [11] sputtering, [12] sol-gel process, [13] dip-coating techniques, [14] and Langmuir-Blodgett (LB) method. [15] However, there are several inherent limitations associated with these methods, such as expensive fabrication equipment, high temperature, film non-uniformity and low mechanical instability.…”
Section: Introductionmentioning
confidence: 99%
“…5a. Bulk anatase TiO 2 is known to be an indirect gap semiconductor, 31 with a band gap energy E g = 3.20 eV. This band gap is attributed to the lowest energy allowed phonon assisted transition (Γ 3 → X 1b ).…”
Section: Resultsmentioning
confidence: 99%
“…It is well known that anatase TiO 2 is an indirect gap semiconductor due to the lowest Γ 1 ←X 1,2 transitions. However, absorption thresholds in anatase TiO 2 nanoparticles were already found at higher energy, with respect to bandgap, and attributed to direct transitions in an otherwise indirect bandgap semiconductor, due to size effects [20, 21]. In our case, the optical energy gap resulted to be of about 3.6 eV, as compared to the bulk anatase TiO 2 value of 3.18 eV, and close to the value reported in literature for anatase TiO 2 nanoparticle Langmuir-Blodgett films [21].…”
Section: Resultsmentioning
confidence: 99%