Defects in PbTe single crystals

Breschi, R.; Camanzi, A.; Fano, Vincenzo

doi:10.1016/0022-0248(82)90288-3

Cited by 29 publications

(14 citation statements)

References 13 publications

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“…It is well krioa-n that such an interface is associated with large thermal stresses a t the position of the interface. The stresses are generally minimum for a planar interface [13]. The creation of the stress results i n the generation arid propagation of defects dnririg directional solidification.…”

Section: Slip Lities Atad Slip Baiids (Tinetched Crystals)mentioning

confidence: 99%

Study of Structural Defects in Melt-Grown Cadmium Iodide Crystals

Shukla

Trigunayat

1987

Phys. Stat. Sol. (a)

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Single crystals of the richly polytypic compound cadmium iodide are grown both from the melt and from aqueous solution. Both, as-grown and etched crystals are studied by optical microscopy and scanning electron microscopy. A wide variety of surface features are observed. The results are analysed to elicit information on the defects present in the crystals.Einkristalle der stark polytypen Verbindung Kadmiumjodid werden sowohl aus der Schmelze als auch aus der wLBrigen Losnng gezuchtet. Sowohl unbehandelte als auch geatzte Kristalle werden mittels optischer Mikroskopie und Rasterelektronenmikroskopie untersucht. Eine breite Variation von Oberflachencharakteristiken wird beobachtet. Die Ergebnisse werden fur die Gewinnung von Informationen uber vorhandene Defekte in den Kristallen analysiert.

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Section: Slip Lities Atad Slip Baiids (Tinetched Crystals)mentioning

confidence: 99%

Study of Structural Defects in Melt-Grown Cadmium Iodide Crystals

Shukla

Trigunayat

1987

Phys. Stat. Sol. (a)

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“…PbTe, having indirect band gap of nearly 0.29 eV [1,2] and direct band gap of nearly 0.32 eV [1,3,4], exhibits both p-and n-type conductivity [5][6][7][8][9][10][11]. Because of narrow band gap, PbTe is useful for optoelectronic devices in infrared region [12].…”

Section: Introductionmentioning

confidence: 98%

Optical and electrical properties of as-grown single crystalline PbTe

Paul

Banerji

2009

Journal of Crystal Growth

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“…This paper is devoted to the investigation of the problem of interaction between Eu impurities and native defects like Te precipitates during high-temperature annealing in vacuum of PbTe:Eu crystals grown from the melt by Bridgman method. The Te precipitates are dominant non-point native defects in lead and tin tellurides, which are always formed in the crystals grown from the melt [16][17][18]. Examination of the changes of MS crystals under the effect of thermal treatment is used in studying the mentioned problem.…”

Section: Introductionmentioning

confidence: 99%