Study of Structural Defects in Melt-Grown Cadmium Iodide Crystals

Shukla, Neha; Trigunayat, G. C.

doi:10.1002/pssa.2211030202

Cited by 6 publications

(1 citation statement)

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“…These stresses are relieved by mutual slippage of the sandwiches that can lead to the creation of nucleation centre for the formation of new polytypic structure. Earlier Shukla and Trigunayat [11] in their study of structural defects in melt grown cadmium iodide crystals (which is isostructural to lead iodide) have frequently observed the patterns of slip lines and slip bands on their basal faces using electron microscopy.…”

Section: Resultsmentioning

confidence: 98%

Impurity induced structural phase transformations in melt grown single crystals of lead iodide

Chaudhary

Kaur

2011

Cryst. Res. Technol.

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Lead iodide is a wide-band gap and highly resistive semiconductor considered to be a promising room temperature nuclear detector. The phenomenon of polytypism is posing interesting problems of phase transformations among its polytypic modifications and formation of polytypic admixture during growth due to native impurities. Transformations have also been observed even when the material is stored for few months that causes deterioration in functioning of the PbI 2 devices. Lead iodide has been purified and single crystals were grown using zone-refining system. The observed phase transformations during growth and storage have been explained in the light of distortion of [PbI 6 ] 4-octahedron due to impurities present in the material and the known crystal structures of PbI 2 .

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Section: Resultsmentioning

confidence: 98%

Impurity induced structural phase transformations in melt grown single crystals of lead iodide

Chaudhary

Kaur

2011

Cryst. Res. Technol.

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Micromorphology of pure and PbI₂‐doped CdI₂ dendritic single crystals

Kumar

Sinha

2005

Cryst. Res. Technol.

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Undoped and PbI 2 -doped dendritic single crystals were grown by vapour growth technique. The basal surfaces of the as grown crystals were examined by optical and electron microscopy to observe wide variety of growth and defect features. Apart from typical features of dendritic growth, features of overgrowth, slip bands, growth steps and their bunching, etc. were observed. The basal surfaces of the crystals were then etched by controlled condensation of water vapour, after optimizing the etching condition, and the microscopic studies were repeated. Etch pits of hexagonal and triangular shape, both symmetric and asymmetric, and of different density, were observed in the case of undoped and doped crystals, respectively. In some cases, crystallographic hillocks were also observed. The crystals were also examined by X-ray diffraction for their polytypism and related behaviour. The results are analyzed to elicit information on the correlation of structure, defects and surface features of the crystals.

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