Defects in epitaxial multilayers I. Misfit dislocations

Matthews, J. W.; Blakeslee, A. E.

doi:10.1016/0022-0248(74)90424-2

Cited by 1,251 publications

(355 citation statements)

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“…We should recall that this is an estimate for the flexoelectric field, corresponding to full stress relaxation in the body of the film. Often the stress relaxation, which is controlled by the film thickness [93] and kinetics of the dislocation formation, is not full. Then both the strain gradient and the flexoelectric field in the surface layer become smaller.…”

Section: Imprintmentioning

confidence: 99%

Fundamentals of flexoelectricity in solids

2013

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The flexoelectric effect is the response of electric polarization to a mechanical strain gradient. It can be viewed as a higher-order effect with respect to piezoelectricity, which is the response of polarization to strain itself. However, at the nanoscale, where large strain gradients are expected, the flexoelectric effect becomes appreciable. Besides, in contrast to the piezoelectric effect, flexoelectricity is allowed by symmetry in any material. Due to these qualities flexoelectricity has attracted growing interest during the past decade. Presently, its role in the physics of dielectrics and semiconductors is widely recognized and the effect is viewed as promising for practical applications. On the other hand, the available theoretical and experimental results are rather contradictory, attesting to a limited understanding in the field. This review paper presents a critical analysis of the current knowledge on the flexoelectricity in common solids, excluding organic materials and liquid crystals.

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Section: Imprintmentioning

confidence: 99%

Fundamentals of flexoelectricity in solids

2013

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“…Matthews and Blakeslee enhanced and further established the validity of the Matthews-Blakeslee model in a series of articles [23][24][25]. Over the years, the mechanical equilibrium theory for calculating the critical thicknesses h c of thin films has been generally found to reasonably agree with the experimental results [26].…”

Section: Resultsmentioning

confidence: 93%

“…Looking at Fig. 12, this [23,24]. It is likely that the hillocks in the GaInP layer act as MD sources, which may affect the parameter O, because an individual MD can only elongate into one direction as the hillocks restrict the movement in the other direction.…”

Section: Resultsmentioning

confidence: 99%

Synchrotron topography and X-ray diffraction study of GaInP layers grown on GaAs/Ge

Lankinen¹,

Knuuttila²,

Kostamo³

et al. 2009

Journal of Crystal Growth

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In x P layers are grown on GaAs/Ge substrates by metalorganic vapor phase epitaxy and studied by means of synchrotron X-ray topography and high-resolution X-ray diffractometry. Misfit dislocations (MDs) in Ga 0:5094 In 0:4906 P epilayers having a þ 3:8 Â 10À4 lattice mismatch to GaAs/Ge substrates at room temperature (RT) are observed. Ga 0:4995 In 0:5005 P epilayers having a lattice mismatch of À3:5 Â 10 À4 to the GaAs/Ge substrates at RT are shown to be free of MDs, which is explained by the different linear thermal expansion coefficient of the epilayer from that of the substrate material compensating the lattice mismatch at the growth temperature of 610 3 C. The Matthews-Blakeslee model for critical thickness was matched to the observed MD pattern in the samples. Additionally, faceted InP hillocks and strain fields beneath them are observed within the GaInP layers. The observed MDs, which are most likely of the 60 3 mixed /1 0 1Sf1 1 1g type, originate at the hillocks.

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“…So some mismatch is accommodated by elastic strain, but a portion of the mismatch is accommodated by misfit dislocations (plastic strain). There are two widely used models for calculations the critical thickness values: the Matthews-Blakeslee mechanical equilibrium model (Matthews.& Blakeslee, 1974) and the People-Bean energy equilibrium model (People & Bean, 1985). The People-Bean energy equilibrium model requires the total energy being at its minimum under critical thickness.…”

Section: Pseudomorphic and Metamorphic Growthmentioning

confidence: 99%