Defects in epitaxial multilayers

Matthews, J. W.; Blakeslee, A. E.

doi:10.1016/0022-0248(76)90041-5

Cited by 600 publications

(153 citation statements)

References 9 publications

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“…For example, sample B is partially relaxed while a thinner one ͑A͒ is almost fully relaxed, and a thicker one ͑G͒ is pseudomorphic. Critical thicknesses can, for some samples, be well above the values calculated using the relaxation models, 27,28 as pointed out in Ref. 22.…”

mentioning

confidence: 56%

Compositional dependence of the strain-free optical band gap in InxGa1−xN layers

Pereira

Correia

Monteiro

et al. 2001

Applied Physics Letters

113

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The effect of strain on the compositional and optical properties of a set of epitaxial single layers of In x Ga 1Ϫx N was studied. Indium content was measured free from the effects of strain by Rutherford backscattering spectrometry. Accurate knowledge of the In mole fraction, combined with x-ray diffraction measurements, allows perpendicular strain (⑀ zz ) to be evaluated. Optical band gaps were determined by absorption spectroscopy and corrected for strain. Following this approach, the strain free dependence of the optical band gap in In x Ga 1Ϫx N alloys was determined for xр0.25. Our results indicate an ''anomalous,'' linear, dependence of the energy gap on the In content, at room temperature: E g (x)ϭ3.39-3.57x eV. Extension of this behavior to higher concentrations is discussed on the basis of reported results.

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mentioning

confidence: 56%

Compositional dependence of the strain-free optical band gap in InxGa1−xN layers

Pereira

Correia

Monteiro

et al. 2001

Applied Physics Letters

113

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“…Since these layers are inherently unstable it is important to understand the mechanism of relaxation of strain. It has been known for a long time that the formation of dislocations is a strain relief mechanism [2,3]. However, in recent years it has been recognized that strained layers are unstable against shape changes [4].…”

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confidence: 99%

Shape transition in the epitaxial growth of gold silicide in Au thin films on Si(111)

et al. 1995

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Growth of epitaxial gold silicide islands on bromine-passivated Si (111) substrates has been studied by optical and electron microscopy, electron probe micro analysis and helium ion backscattering. The islands grow in the shape of equilateral triangles up to a critical size beyond which the symmetry of the structure is broken, resulting in a shape transition from triangle to trape- Typeset using REVT E X 1

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“…The superlattice period (ASL) was measured from the angular separation between the superlattice satellites peaks [30]. 3. Results Figure 1 shows a cross section of the sample t)233.…”

Section: Methodsmentioning

confidence: 99%

“…Despite the high interest and the big effort in the last forty years, a complete comprehension of the strain relaxation mechanism in these material systems has not been achieved. Several authors report on the strain relaxation via the nucleation of misfit dislocations and on their formation mechanism [1][2][3][4][5][6][7][8]. The proposed models give a critical thickness for the relaxation by nucleation of misfit dislocations, underestimating the experimentally measured value [9,10].…”

Section: Introductionmentioning

confidence: 99%

Strain Relaxation of Si/Ge Multilayers Investigated by Transmission Electron Microscopy and High-Resolution X-Ray Diffractometry

Carlino

Giannini

Tapfer

et al. 1995

Microsc. Microanal. Microstruct.

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Abstract. 2014 In this work we investigate the strain-relief mechanisms and the formation of structural defects of Si/Ge multilayers grown by molecular beam epitaxy on (100)-Si substrates. The investigated specimens differ in number of periods, period thickness, and in the Si/Ge layer thickness ratio. The structural analyses are performed by transmission electron microscopy and high-resolution X-ray diffraction. We found that a Si-Ge interdiffusion induces a broadening of the nominal thickness of the Ge layer, producing a Six Ge1-x alloy as well as a higher Ge content in the last periods of the multilayer structure. Our measurements suggest that the strain relaxation occurs in two steps: i) in each period of the multilayer the strain energy density is partially reduced by the formation of coherent islands; ii) at a certain value of the strain energy density, the shape of the coherent islands changes and the structures, partially or completely, relax the accumulated strain energy by nucleation of dislocations. The increase of the strain energy density is related to the measured monotonic increase of the Ge content as a function of the growth time.

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Defects in epitaxial multilayers

Cited by 600 publications

References 9 publications

Compositional dependence of the strain-free optical band gap in InxGa1−xN layers

Compositional dependence of the strain-free optical band gap in InxGa1−xN layers

Shape transition in the epitaxial growth of gold silicide in Au thin films on Si(111)

Strain Relaxation of Si/Ge Multilayers Investigated by Transmission Electron Microscopy and High-Resolution X-Ray Diffractometry

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