2013
DOI: 10.1016/j.materresbull.2012.11.073
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Defects clustering and ordering in di- and trivalently doped ceria

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Cited by 53 publications
(51 citation statements)
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“…S3(a)). Furthermore, the oxygen ordering and clustering with Ga 3þ ions at high concentrations cannot be excluded as one of the reasons for the decrease of ionic conductivity [17,18]. The temperature dependence of the conductivity computed from the bulk resistance in Sr 2 Mg 0.8 Ga 0.2 Ge 2 O 7.1 is shown in Fig.…”
Section: Resultsmentioning
confidence: 99%
“…S3(a)). Furthermore, the oxygen ordering and clustering with Ga 3þ ions at high concentrations cannot be excluded as one of the reasons for the decrease of ionic conductivity [17,18]. The temperature dependence of the conductivity computed from the bulk resistance in Sr 2 Mg 0.8 Ga 0.2 Ge 2 O 7.1 is shown in Fig.…”
Section: Resultsmentioning
confidence: 99%
“…In addition, surface Ti 4+ concentration was found to be higher than in the bulk concentration, pointing to solute segregation. 46,47,[58][59][60][61] Even so, while TiO 2 addition to CeO 2 inhibits coarsening, relative to pure CeO 2 , the effect is not injective. Segregation was followed by precipitation of anatase, generally occurring above 700°C.…”
Section: Discussionmentioning
confidence: 99%
“…Generally, in ceramic materials, and specifically in oxides, the addition of dopant elements results in coarsening inhibition due to salute drag, as is the case here. 46,47,[58][59][60][61] Even so, while TiO 2 addition to CeO 2 inhibits coarsening, relative to pure CeO 2 , the effect is not injective. In other words, an increase in TiO 2 concentration does not further slow the coarsening rate.…”
Section: Discussionmentioning
confidence: 99%
“…The associations between the oxygen vacancies and Y 3+ ions form the charged defect clusters or electrically neutral clusters [19]. In these clusters, the oxygen vacancies tend to occupy either the first nearest neighbor sites (1NN) or the second nearest neighbor sites (2NN) to Y 3+ ions.…”
Section: Ii21 the Vacancy-dopant Association Energymentioning
confidence: 99%
“…The vacancy-dopant association energy in doped ceria and zirconia was calculated by atomistic simulation and/or MD methods [19,20]. The association energy between an oxygen vacancy V…”
Section: Ii21 the Vacancy-dopant Association Energymentioning
confidence: 99%