Defects Characterization of GaN Substrate with Hot Implant Process

Abstract

The defect structure of Mg implanted GaN substrate was evaluated by TEM observations, AFM surface observations and Raman scattering spectroscopic analysis. Mg ions were implanted at room temperature (RT) and 500 °C. TEM results showed that the defect distribution along depth scale is different between RT and 500 °C condition. The several peaks originated from ion implantation were found from Raman scattering spectra and the characteristics of the defects by implantation were discussed. The crystal quality of the sample implanted at 500 °C was found to be better than that of RT by comparing the FWHM of the E2 peak.

Microstructure Evolution of AlN:Eu Films at Different Annealing Temperatures

“…As a result, the crystalline distortion is removed. [ 23 ] From the TEM results, it is concluded that after annealing at 1040 °C, there is almost no shadow area in the region of 200 nm below the surface, which proves that the lattice damage was basically removed after 1040 °C annealing. And the relative stress change within the B region tends to level off with the increase of annealing temperature.…”

Characterization of magnesium channeled implantation layers in GaN(0001)

“…11) However, there have been only a few reports of channeled implantation of Mg ions to GaN. 11,[15][16][17] So far, we have evaluated the defects of GaN on sapphire induced by Mg random implantation using transmission electron microscopy (TEM), Raman spectroscopy and atomic force microscopy (AFM), 18) but the defects of Mg channel implanted layers have not been evaluated fully. In this work, we confirmed the activation of Mg and evaluated Mg channel implanted layers.…”