Crystallographic, electronic, and energetic analyses of the (2,33) [or (2,3,3,3) in the standard Zhadanov notation] bar-shaped stacking fault, observed in as-grown 4H-SiC epitaxial layers, are presented. The defect has been identified by means of spatially resolved microphotoluminescence (μ-PL) measurements at different emission wavelengths, focusing on the emission peak at 0.3 eV below the conduction band. Low temperature μ-PL measurements have also been performed. The defect has been identified and characterized using high resolution transmission electron microscopy. Experimental results are correlated and validated by the calculations of the Kohn–Sham electronic band structure and the defect formation energy.
Stacking faults in 4H-SiC epitaxial layers were investigated by micro-photoluminescence (PL) mapping at room temperature and by transmission electron microscopy (TEM) observation. Stacking faults with a peak emission wavelength of 420 nm were identified by the PL measurements with a He–Cd laser of 325 nm excitation wavelength. The shape of the stacking faults was revealed to be bar-shape by the micro-PL intensity mapping at emission wavelength of 420 nm. The stacking sequences of the bar-shaped stacking faults were determined as (...2, 3, 2...), (...2, 3, 3, 3, 2...), and (...2, 3, 3, 3, 3, 3, 2...) in the Zhdanov's notation by high-resolution TEM.
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