1982
DOI: 10.1016/0146-3535(82)90016-8
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Defects and their avoidance in LPE of garnets

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Cited by 23 publications
(4 citation statements)
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“…The switching field and effective anisotropy field reduction is consistent with a model that includes regions of reduced anisotropy caused by defects, in either the particles or the substrate, with the defect's stress induced anisotropy field extending into the particle. [3][4][5] These results have a direct consequence for the case of small metallic particles, where there is a much higher probability for random defects, such as grain boundaries, inclusions, substrate-film interface effects, and dislocation densities and associated stress fields that are much higher than in this model system.…”
Section: Introductionmentioning
confidence: 86%
“…The switching field and effective anisotropy field reduction is consistent with a model that includes regions of reduced anisotropy caused by defects, in either the particles or the substrate, with the defect's stress induced anisotropy field extending into the particle. [3][4][5] These results have a direct consequence for the case of small metallic particles, where there is a much higher probability for random defects, such as grain boundaries, inclusions, substrate-film interface effects, and dislocation densities and associated stress fields that are much higher than in this model system.…”
Section: Introductionmentioning
confidence: 86%
“…Measurement of the bulk specimens is difficult in the shorter wavelength region than 700 nm, since specimen thickness is so large as 0.25 mm. Liquid phase epitaxial YIG films were grown on the (111) oriented Gd 3 Ga s 0 12 substrate [8]. These films are transparent enough to be measured over the wavelength region 500-2000 nm , since the thickness of films is 1.0 -56.0 ~m [9].…”
Section: Methodsmentioning
confidence: 99%
“…In this case, in equilibrium the increment of the energy gained by a DW of length L and height h moving in the field H through the distance fix must be equal to, or greater than,. the change in the specific DW energy fiyw (1) and the coercivity is given by (2) where yw=4(AKu)~' Ms is the saturation magnetization, Ku the anisotropy energy and A the exchange energy. From (2) it can be seen that any change in K or A affecting dYw/dx, i.e.…”
Section: Coercivity Of Magnetic Garnet Filmsmentioning
confidence: 99%
“…For successful production of large capacity bubble memory chips all the common crystalline defects had to be eliminated because the magnetic domains have to propagate along extended paths without any defect hindering the motion [2]. The most general definition of a defect is a deviat'ion from the translational symmetry.…”
Section: Introductionmentioning
confidence: 99%