Defects and recombination in a-Si1−xCx:H films

Liedtke, S.; Jahn, Karin; Finger, F.; Fuhs, W.

doi:10.1016/0022-3093(87)90260-2

Cited by 43 publications

(5 citation statements)

References 8 publications

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“…In this case, the PL shows short lifetime, weak temperature dependence, and relatively high efficiency, and is not quenched by applied electric field. 5 In C-rich a-Si 1Ϫx C x :H, Liedtke et al 20 found little correlation between PL efficiency and spin density, suggesting that the recombination is not particularly associated with defects. For samples SCJ24-SCJ26, the variation of nearly exponentially increasing RQE versus E 04 has also been observed in the PL study of pure a-C:H reported by Rusli et al 21 Finally, note that Conde et al 5 could not observe room temperature PL from their ECRCVD deposited Si-rich a-Si 1Ϫx C x :H films.…”

Section: Samplementioning

confidence: 99%

Effect of radio-frequency bias voltage on the optical and structural properties of hydrogenated amorphous silicon carbide

Cui

Rusli

Yoon

et al. 2001

Journal of Applied Physics

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Hydrogenated amorphous silicon carbide (a-Si 1Ϫx C x :H) films have been deposited using the electron cyclotron resonance chemical vapor deposition process under varying negative rf-bias voltage at the substrate. The optical and structural properties of these films are characterized using Rutherford backscattering spectroscopy, transmittance/reflectance spectrophotometry, photothermal deflection spectroscopy, Fourier transform infrared absorption, Raman scattering, and room temperature photoluminescence ͑PL͒. These films deposited using a gas mixture of silane, methane, and hydrogen at a constant gas flow ratio showed a slight increase in the carbon fraction x, but very obvious structural transformation, at increasing rf induced bias voltage from Ϫ20 to Ϫ120 V. Near stoichiometric a-Si 1Ϫx C x :H films with a carbon fraction x of almost 0.5 are achieved at low bias voltage range from Ϫ20 to Ϫ60 V. Visible PL with relatively low efficiency can be observed from such films at room temperature. For larger bias voltages from Ϫ80 to Ϫ120 V, slightly C-rich a-Si 1Ϫx C x :H films (xϾ0.5) with larger optical gaps are obtained. These films have relatively higher PL efficiency, and the relative quantum efficiency was also found to depend strongly on the optical gap. Structurally, it was found that there is an increase in the hydrogen content and carbon sp 2 bonding in the films at larger bias voltages. The latter leads to an increase in the disorder in the films. The linear relationship observed between the Urbach energy E 0 and B factor in the Tauc equation suggests that the local defects related to microstructural disorder resulting from alloying with carbon dominate the overall defect structure of the films. Substrate biasing is noted to be crucial for the formation of Si-C bonds, as deduced from the Raman scattering results.

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Section: Samplementioning

confidence: 99%

Effect of radio-frequency bias voltage on the optical and structural properties of hydrogenated amorphous silicon carbide

Cui

Rusli

Yoon

et al. 2001

Journal of Applied Physics

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“…Transitions between these modified molecular orbitals can lead to PL bands at different energies. The PL model of DLC:H is somewhat similar to the case of a-Si:H: 94 it starts with the creation of an electron-hole pair by a light scattering event, then its thermalization via phonons inside the valence and conduction bands, then its trapping in band tail states, followed by its radiative recombination. The particularity of the DLC:H case arises from the fact that the band tails are very wide and overlap with a high density of mid-gap defect states.…”

Section: Photoluminescence Model and Dangling Bonds Passivationmentioning

confidence: 99%

Complete characterization by Raman spectroscopy of the structural properties of thin hydrogenated diamond-like carbon films exposed to rapid thermal annealing

Rose

Wang

Smith

et al. 2014

Journal of Applied Physics

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Gold nanoparticle formation in diamond-like carbon using two different methods: Gold ion implantation and codeposition of gold and carbon J. Appl. Phys. 112, 074312 (2012) We have demonstrated that multi-wavelength Raman and photoluminescence spectroscopies are sufficient to completely characterize the structural properties of ultra-thin hydrogenated diamondlike carbon (DLC:H) films subjected to rapid thermal annealing (RTA, 1 s up to 659 C) and to resolve the structural differences between films grown by plasma-enhanced chemical vapor deposition, facing target sputtering and filtered cathodic vacuum arc with minute variations in values of mass density, hydrogen content, and sp 3 fraction. In order to distinguish unequivocally between films prepared with different density, thickness, and RTA treatment, a new method for analysis of Raman spectra was invented. This newly developed analysis method consisted of plotting the position of the Raman G band of carbon versus its full width at half maximum. Moreover, we studied the passivation of non-radiative recombination centers during RTA by performing measurements of the increase in photoluminescence in conjunction with the analysis of DLC:H networks simulated by molecular dynamics. The results show that dangling bond passivation is primarily a consequence of thermally-induced sp 2 clustering rather than hydrogen diffusion in the film. V C 2014 AIP Publishing LLC. [http://dx

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“…A similar efficiency of the PL has been found for aSi 1Ϫx C x thin films prepared by glow discharge techniques from undiluted mixtures of silane and methane. 12 For TMS prepared films an estimated efficiency of 10% has been reported. 14 The range of strong optical absorption ͑k UV ϭ10 3 -10 4 cm Ϫ1 ͒ was measured simply by the transmittance of 1 m coated glass and corrected by the transmittance of noncoated glass.…”

mentioning

confidence: 96%

Amorphous silicon–carbon based thin films with efficient ultraviolet-excited photoluminescence and low self-absorptivity in the emission spectral range

Rüter

Rolf

Bauhofer

1995

Applied Physics Letters

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Defects and recombination in a-Si1−xCx:H films

Cited by 43 publications

References 8 publications

Effect of radio-frequency bias voltage on the optical and structural properties of hydrogenated amorphous silicon carbide

Effect of radio-frequency bias voltage on the optical and structural properties of hydrogenated amorphous silicon carbide

Complete characterization by Raman spectroscopy of the structural properties of thin hydrogenated diamond-like carbon films exposed to rapid thermal annealing

Amorphous silicon–carbon based thin films with efficient ultraviolet-excited photoluminescence and low self-absorptivity in the emission spectral range

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