“…Widespread experimental and theoretical research have been reported on the synthesis, structural, morphological, optical, chemical, magnetic, antibacterial, and electrical characteristics of undoped and doped ZnO with various dopants including transition metals (TM), alkali, and alkaline Earth metals, rare Earth metals, and also non-metals and their composites [14][15][16][17]. An extensive literature survey showed that great efforts have been made toward transition metal doping with ZnO such as cobalt, iron, nickel, chromium, and manganese due to the existence of room-temperature ferromagnetism (RTFM), outstanding photocatalytic activity and band gap modulation [15,17,18]. Studies have revealed that doping ZnO with elements (aluminum, gallium, Indium) of group III leads to the fabrication of an n-type ZnO semiconductor [19], while intentional incorporation with a group I alkali metal (lithium, sodium, potassium) can lead to the fabrication of a high resistive p-type ZnO-based semiconductor [20].…”