2014
DOI: 10.1103/physrevb.89.054102
|View full text |Cite
|
Sign up to set email alerts
|

Defect thermodynamics and kinetics in thin strained ferroelectric films: The interplay of possible mechanisms

Abstract: We present a theoretical description of the influence of misfit strain on mobile defects dynamics in thin strained ferroelectric films. Self-consistent solutions obtained by coupling the Poisson's equation for electric potential with continuity equations for mobile donor and electron concentrations and time-dependent Landau-Ginzburg-Devonshire equations reveal that the Vegard mechanism (chemical pressure) leads to the redistribution of both charged and electro-neutral defects in order to decrease the effective… Show more

Help me understand this report
View preprint versions

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

0
18
0

Year Published

2014
2014
2024
2024

Publication Types

Select...
9

Relationship

4
5

Authors

Journals

citations
Cited by 28 publications
(18 citation statements)
references
References 61 publications
0
18
0
Order By: Relevance
“…79,84,85 However, growth of films beyond the critical thickness for strain relaxation results in formation of dislocations. These dislocations have been predicted [86][87][88][89][90][91][92][93] and shown 41,[94][95][96][97][98][99] to affect the ferroelectric and dielectric properties. In epitaxial Ba 0.6 Sr 0.4 TiO 3 films, a suppression of the permittivity was reported and explained by a concentration of misfit dislocations (~10 11 cm À2 ) altering the dielectric stiffness.…”
Section: August 2016mentioning
confidence: 99%
“…79,84,85 However, growth of films beyond the critical thickness for strain relaxation results in formation of dislocations. These dislocations have been predicted [86][87][88][89][90][91][92][93] and shown 41,[94][95][96][97][98][99] to affect the ferroelectric and dielectric properties. In epitaxial Ba 0.6 Sr 0.4 TiO 3 films, a suppression of the permittivity was reported and explained by a concentration of misfit dislocations (~10 11 cm À2 ) altering the dielectric stiffness.…”
Section: August 2016mentioning
confidence: 99%
“…Continuous approximation for the concentration of the electrons in the conduction band is consistent with the following expression for electro-chemical potential [31]:…”
Section: Continuity Equation For Donor Concentrationmentioning
confidence: 57%
“…In the case, the proportionality coefficient is determined either from the ab-initio calculation [37] or from experiments [38,39]. It should be noted that the influence of Vegard strain, coming from the diffusion and the accumulation of defects near the interfaces of ferroelectric thin films, results in the pronounced change of their polar properties [40,41]. Therefore it is natural to expect that one could not neglect Vegard strains when describing polar properties of ferroelectric nanoparticles.…”
Section: Surface Stress (Originated From the Surface Tension)mentioning
confidence: 99%