2020
DOI: 10.1103/physrevlett.125.036804
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Defect-Selective Charge-Density-Wave Condensation in 2HNbSe2

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Cited by 27 publications
(15 citation statements)
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“…The first and most significant one is why the CDW correlations are so strong around native defects in 1 TL ZrSe 2 films and occur only locally in 1 TL ZrTe 2 films. The defect-mediated local doping and therefore CDW condensation might be the possible causes for it, as well as the robust CDW in 2 TL ZrSe 2 and multilayer ZrTe 2 films . This comes to another prominent concern about how the CDW of ZrX 2 (X = Se, Te) evolves with doping level and interplays with other collective phenomena such as superconductivity observed in alkali-metal intercalated ZrSe 2 and predicted in Ni-doped ZrTe 2 . , In any event, our results reveal a unique compatibility between the simple FS topology and the CDW phase and open new avenues toward creating and controlling the many-body CDW phase in semiconductors.…”
mentioning
confidence: 57%
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“…The first and most significant one is why the CDW correlations are so strong around native defects in 1 TL ZrSe 2 films and occur only locally in 1 TL ZrTe 2 films. The defect-mediated local doping and therefore CDW condensation might be the possible causes for it, as well as the robust CDW in 2 TL ZrSe 2 and multilayer ZrTe 2 films . This comes to another prominent concern about how the CDW of ZrX 2 (X = Se, Te) evolves with doping level and interplays with other collective phenomena such as superconductivity observed in alkali-metal intercalated ZrSe 2 and predicted in Ni-doped ZrTe 2 . , In any event, our results reveal a unique compatibility between the simple FS topology and the CDW phase and open new avenues toward creating and controlling the many-body CDW phase in semiconductors.…”
mentioning
confidence: 57%
“…Such behaviors differ strikingly from the single-layer TiX2 (X = Se, Te) with comparable or enhanced CDW 3,24,25,[64][65][66] . The defect-mediated CDW condensation 67 and more appropriate doping level might be the possible causes for the prominent CDW in 2 TL ZrSe2 and multilayer ZrTe2 films. This comes to another prominent concern how the CDW of ZrX2 (X = Se, Te) evolves with doping level and interplays with other collective phenomena such as superconductivity 68 .…”
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confidence: 99%
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“…Figure D,E shows the electron transfers at the two interfaces when a negative bias is applied on the EGaIn. The microscale crystals have higher surface defect density compared to a bulk crystal because additional defects (dislocations) may be introduced during grinding the bulk KTN crystal process, which leads to a poor integrity of the crystal surface . Accordingly, the electrons may be trapped by the defects when the electrons reach the KTN/Au interface (Figure E).…”
Section: Resultsmentioning
confidence: 99%
“…The former is related to the phase rigidity of the CDW, which can be progressively destroyed by raising temperature [8]. In 2D CDW material, such as 2H-NbSe2, there is no apparent impurity pinning effect until above the CDW transition temperature [27,28]. The evolution of the phase disordering can be readily visualized in Fig.…”
mentioning
confidence: 97%