Defect-rich GaN interlayer facilitating the annihilation of threading dislocations in polar GaN crystals grown on (0001)-oriented sapphire substrates

Abstract

Extra half-plane shortening of dislocations as an origin of tensile strain in Si-doped (Al)GaN

Analysis of Anisotropic Growth and Defect Development of Hexagonal GaN under Atomic Simulation

“…The sudden increase in dislocations at the initial stage is related to the high energy state in the crystal growth process in the O1 crystal orientation. The continuous decrease in dislocation density is caused by the fact that the O1 crystal orientation-induced crystals contain a large number of defect structures, and the defect structures of the crystals will play a hindering role in dislocation growth, which is consistent with the phenomenon found by Barchuk et al in GaN deposition growth experiments, where the quality of directly grown polar GaN crystals was improved by introducing defect-rich structural GaN layers that promote the interaction of microstructural defects and thus lead to dislocation annihilation, with the difference that the microstructural defects in this work are generated simultaneously with dislocations during crystal growth, and they interact during crystal growth leading to dislocation annihilation. The crystal induced by the orientations of the O2 and the O3 will produce low-density dislocations at the initial stage; then, the dislocation growth stops, and the dislocation density remains constant.…”

Local Strain Distribution in ZnO Microstructures Visualized with Scanning Nano X‐Ray Diffraction and Impact on Electrical Properties

“…[26] A further study utilizing nano focused diffraction investigated defect-rich GaN structures and showed that by tailoring the growth parameter an annihilation of threading dislocation is achieved. [27] Previous nXRD studies by the authors investigated the strain behavior of micrometer-sized ZnO rods coated with magnetostrictive FeCoSiB. A rod, up to 27 μm in diameter, exhibits an intrinsic compressive strain of 5.5 Â 10 À4 and an additional, magnetic field induced strain of 1 Â 10 À4 near the ZnO interface.…”

“…[ 26 ] A further study utilizing nano focused diffraction investigated defect‐rich GaN structures and showed that by tailoring the growth parameter an annihilation of threading dislocation is achieved. [ 27 ]…”