Defect-related gate oxide breakdown

Bergholz, W.; Mohr, W.; Drewes, W.; Wendt, H.

doi:10.1016/0921-5107(89)90271-7

Cited by 22 publications

(8 citation statements)

References 8 publications

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“…Hence it was clear that although the material was identical in resistivity and oxygen content and other tangible properties that could be measured, it behaved differently in a device process and in the subsequent voltage or current stress test of the capacitors (Fig. 3, [13,14]). …”

Section: Crystal Pulling Gate Oxide Quality and Intrinsic Defectsmentioning

confidence: 99%

Impact of Research on Defects in Silicon on the Microelectronic Industry

Bergholz

Gilles²

2000

phys. stat. sol. (b)

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Section: Crystal Pulling Gate Oxide Quality and Intrinsic Defectsmentioning

confidence: 99%

Impact of Research on Defects in Silicon on the Microelectronic Industry

Bergholz

Gilles²

2000

phys. stat. sol. (b)

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“…Metallic contaminants picked up during the fabrication of an integrated circuit degrade the breakdown field of a SiO 2 film, 1-4 as do crystal lattice defects [4][5][6][7][8][9] and roughness of the wafer surface. 10 Although this degradation has been the subject of a large number of studies, it is still incompletely understood.…”

Section: Introductionmentioning

confidence: 99%

Degradation of dielectric breakdown field of thermal SiO2 films due to structural defects in Czochralski silicon substrates

Satoh

Shiota

Murakami

et al. 1996

Journal of Applied Physics

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We used heat treatment to intentionally introduce various structural defects in Czochralski silicon substrates. The type, size, and number density of the induced defects were surveyed with transmission electron microscopy, and the defects were then incorporated into SiO 2 films ͑10-50 nm thick͒ during thermal oxidation in dry O 2 . The effect of the defects on dielectric strength of the SiO 2 films was examined with a time zero dielectric breakdown method. Larger platelet oxygen precipitates caused greater decreases of the breakdown field, and precipitates smaller than the SiO 2 film thickness did not appreciably reduce the breakdown field. Every large platelet oxygen precipitate incorporated in the SiO 2 film caused a degradation. Octahedral oxygen precipitates caused little degradation. The breakdown field was higher than 7 MV/cm and did not depend much on the SiO 2 film thickness and precipitate size. We discussed possible mechanisms for the degradation due to both kinds of precipitates. Oxidation-induced stacking faults formed by a surface oxidation did not markedly reduce the breakdown field when only segments of dislocations and stacking faults were incorporated in the SiO 2 film. Another serious degradation was caused by pits that were formed by dissolving octahedral oxygen precipitates in a HF solution. The breakdown field was lower for thicker oxide films, and it recovered as the pit shape became smoother during chemical etching. We proposed that this degradation was caused by a local thinning of SiO 2 film due to stress generated in the oxidation of pits. These results suggest that voids rather than the other reported grown-in defects play the most important role in the degradation observed for as-grown silicon.

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“…15͒, ECS President in 1994-1995 and ECS Fellow. 200 This resulted in the degradation of their electrical characteristics by modifying the electric field distribution in the p-n junction 41 203,204 and others have extensively described the degraded electrical characteristics of p-n junctions 142,[205][206][207] and gate oxide integrity ͑GOI͒, [208][209][210][211][212][213] due to OISFs metallic precipitates and metallic decorated structural defects such as dislocations and OISFs. Indeed, the model of p-n junction degradation due to imperfections in the SCR, metallic precipitation at LOCOS edges, trench structures and ion-implantation induced defects at spacer edges bordering SCRs, as well as on stacking faults in the p-n junction, was generally found to be more detrimental than the generation-recombination ͑g-r͒ effect of the metals, per se, as discussed by Bernd Kolbesen and Horst Strunk.…”

Section: Point-defect Dilemmamentioning

confidence: 99%

mentioning

confidence: 99%

“…220 The degradation of GOI due to OISF, generally decorated by metals, was noted earlier. [208][209][210][211][212][213] Vacancy-rich CZ material was also shown to result in GOI failures in 20 nm oxides, due to the agglomeration of the vacancies into macroscopic voids and related structural defects which can lead to thinning of the gate oxide as well as other intermediate structures.2,221 Gate oxide integrity in the sub-2 nm oxide regime, however, appears to be independent of COPs and metals, 2 limited instead by intrinsic phenomena such as direct tunneling. The identification of vacancy agglomerates with crystal originated pits ͑COPs͒ 222-224 and flow pattern defects ͑FPDs͒, 225 including their modeling with the crystal growth parameters, was also clarified.…”

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An Electronics Division Retrospective (1952-2002) and Future Opportunities in the Twenty-First Century

Huff¹

2002

J. Electrochem. Soc.

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The emergence of crystalline silicon and silicon-based materials such as silicon-germanium as the premier materials and the personnel driving the integrated circuit ͑IC͒ microelectronics revolution will be reviewed. The major threshold events from the 1940s through the mid-1960s, presaging the onset of the large scale integration microelectronics era, will be highlighted. The major silicon material challenges such as dislocation-free single-crystal growth, plastic deformation, the point-defect dilemma, gettering, oxygen in silicon, carrier lifetime, and controlled point-defects in the silicon crystal during the evolution of silicon microelectronics from large scale integration through the very large scale integration era in the 1970s and the 1980s into the ultralarge scale integration era of the 1990s will then be reviewed. Opportunities in epitaxy, wafer cleaning, silicon-on-insulator, silicon-germanium, IC scaling and potential changes in device configuration and IC architecture in the evolution towards the 64 Gbit DRAM and 9 G transistor high-performance MPU logic era in 2016 ͑per the 2001 edition of the International Technology Roadmap for Semiconductors͒ will be discussed in the context of silicon-based microelectronics. The complementary role of compound semiconductors, nanoelectronics and the continuing initiative to obtain an optoelectronic system compatible with silicon will also be discussed. Finally, nonsilicon materials and device configurations will briefly be noted. © 2002 The Electrochemical Society. ͓DOI: 10.1149/1.1471893͔ All rights reserved.Available electronicallyApril 11, 2002. The computer and communications age has catapulted electronics to its current status as the dominant global industry. Indeed, we are in the midst of a revolution brought about by the availability of inexpensive information acquisition, manipulation, and distribution systems. Exploitation of electron and hole conduction in silicon has resulted in electronic memory and logic circuits such as the dynamic random access memory ͑DRAM͒ and microprocessor. Control of the interaction of photons with compound semiconductors has resulted in optical devices such as the laser and optical fiber networks. This revolution has been and will continue to be dependent on our ability to control electronic and photonic material processing techniques for the manufacture of useful devices, circuits and systems. The preparation and detailed processing sequence of a material from crystal growth through device and circuit fabrication determines the microstructure and, therefore, the electronic properties of the material and resulting device and circuit performance, yield, and reliability. Electronic materials include semiconductors, dielectrics, magnetics, piezoelectrics, optoelectronic materials, and optical fibers which may be utilized in crystalline, polycrystalline, or amorphous form. Materials are indeed the sine qua non of electronic and optical devices and circuits.An extensive list of relevant citations through 1997 is noted in Ref. ...

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Defect-related gate oxide breakdown

Cited by 22 publications

References 8 publications

Impact of Research on Defects in Silicon on the Microelectronic Industry

Impact of Research on Defects in Silicon on the Microelectronic Industry

Degradation of dielectric breakdown field of thermal SiO2 films due to structural defects in Czochralski silicon substrates

An Electronics Division Retrospective (1952-2002) and Future Opportunities in the Twenty-First Century

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