Defect reduction in (11¯00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy

Haskell, B. A.; Wu, Feng; Craven, Michael D.; Matsuda, Shigeaki; Fini, P.; Fujii, Tetsuo; Fujito, Kenji; DenBaars, Steven P.; Speck, James S.; Nakamura, Shuji

doi:10.1063/1.1866225

Cited by 143 publications

(112 citation statements)

References 21 publications

(8 reference statements)

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“…This behavior has also been observed in the lateral overgrowth of m-plane GaN. 20 Some authors tentatively attributed it to different adsorption or desorption rates on Ga-and N-faces. However, our experiments show that under the same conditions N-face and Ga-face c-plane GaN have similar growth rates, which was also verified by others.…”

Section: Resultsmentioning

confidence: 83%

Defect reduction in (112¯) a-plane GaN by two-stage epitaxial lateral overgrowth

Özgür

et al. 2006

Applied Physics Letters

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In the epitaxial lateral overgrowth (ELO) of (1120) a-plane GaN, the uneven growth rates of two opposing wings, Ga-and N-wings, makes the coalescence of two neighboring wings more difficult than that in c-plane GaN. We report a two-stage growth method to get uniformly coalesced epitaxial lateral overgrown a-plane GaN using metalorganic chemical vapor deposition (MOCVD) by employing relatively lower growth temperature in the first step followed by enhanced lateral growth in the second. Using this method, the height differences between Ga-polar and N-polar wings at the coalescence front could be reduced, thereby making the coalescence of two wings much easier. Transmission electron microscopy (TEM) showed that the threading dislocation density in the wing areas was 1.0×10 8 cm -2 , more than two orders of magnitude lower than that in the window areas (4.2×10 10 cm -2 ). However, high density of basal stacking faults of 1.2×10 4 cm -1 was still observed in the wing areas as compared to c-plane GaN. Atomic force microscopy and photoluminescence

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Section: Resultsmentioning

confidence: 83%

Defect reduction in (112¯) a-plane GaN by two-stage epitaxial lateral overgrowth

Özgür

et al. 2006

Applied Physics Letters

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“…To improve the efficiency of GaN-based devices, various strategies are employed with the aim to reduce the high dislocation densities inherent to the heteroepitaxial growth of GaN and avoiding polarization fields which are detrimental to optical devices [2,3]. However, these growth strategies often result in the formation of stacking faults: Especially the growth of non-and semi-polar GaN layers [4][5][6][7][8] as well as epitaxial-lateral overgrowth [9][10][11][12][13][14] or the coalescence overgrowth of nanowires [15][16][17][18] are associated with the formation of basal-plane stacking faults independent of which growth technique is used. As a consequence, the emission characteristics and transport properties of the layers are changed [11,19].…”

Section: Introductionmentioning

confidence: 99%

Luminescence associated with stacking faults in GaN

Lähnemann¹,

Jahn²,

Brandt³

et al. 2014

J. Phys. D: Appl. Phys.

105

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Abstract. Basal-plane stacking faults are an important class of optically active structural defects in wurtzite semiconductors. The local deviation from the 2H stacking of the wurtzite matrix to a 3C zinc-blende stacking induces a bound state in the gap of the host crystal, resulting in the localization of excitons. Due to the two-dimensional nature of these planar defects, stacking faults act as quantum wells, giving rise to radiative transitions of excitons with characteristic energies. Luminescence spectroscopy is thus capable of detecting even a single stacking fault in an otherwise perfect wurtzite crystal. This review draws a comprehensive picture of the luminescence properties related to stacking faults in GaN. The emission energies associated with different types of stacking faults as well as factors that can shift these energies are discussed. In this context, the importance of the quantum-confined Stark effect in these zinc-blende/wurtzite heterostructures, which results from the spontaneous polarization of wurtzite GaN, is underlined. This discussion is extended to zinc-blende segments in a wurtzite matrix. Furthermore, other factors affecting the emission energy and linewidth of stacking fault-related peaks as well as results obtained at room temperature are addressed. The considerations presented in this article should be transferable also to other wurtzite semiconductors.

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“…Professor Nakamura and his colleagues at the University of California, Santa Barbara (UCSB) made a significant contribution to the research on nonpolar/semipolar crystal growth and devices under the Exploratory Research for Advanced Technology (ERATO) program sponsored by the Japan Science and Technology Agency (JST). (10) The lowdefect growth of a-plane, (11) m-plane, (12) and semipolar-plane (13) GaN was achieved through epitaxial lateral overgrowth, and an a-plane LED was demonstrated in 2005, (14) as shown in Fig. 2.…”

Section: Challenges Toward Realizing Innovative Devices Using Gan Submentioning

confidence: 99%

Current Status and Future Prospects of GaN Substrates for Green Devices

2013

Sensors and Materials

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Recently, single-crystal substrates applied to optoelectronic devices, such as sapphire, GaN, and SiC, have been attracting much attention for use in green devices. At present, they are mainly used for the blue-violet semiconductor laser that is applied as the light source of Blu-ray disc equipment. In the near future, it is highly likely that they will be introduced into white LEDs used for lighting and LCD backlight, power transistors to be used for power converters, and also into power semiconductors such as power diodes, leading to the rapid growth of the green device market involving GaN, SiC and diamond. These single-crystal substrates are expected to serve as a trigger to realize a low-carbon and low-energy society, complying with the projected cutbacks of power and CO 2 emission by 70 billion kWh and 40 million tons per year, respectively. This is why they are referred to as "green devices". In this paper, we will discuss the recent approaches that are in progress to develop new devices, taking GaN substrates as an example. Furthermore, we will review current problems and future perspectives for the most critical issue of realizing large substrates, as well as for the crystal growth method and manufacturing process that affect crystal quality.

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Defect reduction in (11¯00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy

Cited by 143 publications

References 21 publications

Defect reduction in (112¯) a-plane GaN by two-stage epitaxial lateral overgrowth

Defect reduction in (112¯) a-plane GaN by two-stage epitaxial lateral overgrowth

Luminescence associated with stacking faults in GaN

Current Status and Future Prospects of GaN Substrates for Green Devices

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