Multiple quantum well (MQW) InGaN light emitting diodes with and without electron blocking layers, with relatively small and large barriers, with and without p-type doping in the MQW region emitting at ∼420nm were used to determine the genesis of efficiency droop observed at injection levels of approximately ⩾50A∕cm2. Pulsed electroluminescence measurements, to avoid heating effects, revealed that the efficiency peak occurs at ∼900A∕cm2 current density for the Mg-doped barrier, near 550A∕cm2 for the lightly doped n-GaN injection layer, meant to bring the electron injection level closer to that of holes, and below 220A∕cm2 for the undoped InGaN barrier cases. For samples with GaN barriers (larger band discontinuity) or without p-AlGaN electron blocking layers the droop occurred at much lower current densities (⩽110A∕cm2). In contrast, photoluminescence measurements revealed no efficiency droop for optical carrier generation rates corresponding to the maximum current density employed in pulsed injection measurements. All the data are consistent with heavy effective mass of holes, low hole injection efficiency (due to relatively lower p-doping) leading to severe electron leakage being responsible for efficiency droop.

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Light emitting diodes ͑LEDs͒ based on InGaN suffer from efficiency droop at current injection levels as low as 50 A cm −2. We investigated multiple quantum well InGaN LEDs with varying InGaN barrier thicknesses ͑3-12 nm͒ emitting at ϳ400-410 nm to investigate the effect of hole mass and also to find out possible solutions to prevent the efficiency droop. In LEDs with electron blocking layers, when we reduced the InGaN barriers from 12 to 3 nm, the current density for the peak or saturation of external quantum efficiency increased from 200 to 1100 A cm −2 under pulsed injection conditions, which eliminates the heating effects to a large extent. Our calculations show that such reduction in the barrier thickness makes the hole distribution more uniform among the wells. These results suggest that the inferior low hole transport through the barriers exacerbated by large hole effective mass and low hole injection due to relatively low hole concentration and the consequent electron leakage are responsible for the efficiency droop at high current injection levels.

The authors report the growth of semipolar (112¯2) GaN films on nominally on-axis (101¯0) m-plane sapphire substrates using metal organic chemical vapor deposition. High-resolution x-ray diffraction (XRD) results indicate a preferred (112¯2) GaN orientation. Moreover, epitaxial lateral overgrowth (ELO) of GaN was carried out on the (112¯2) oriented GaN templates. When the ELO stripes were aligned along [112¯0]sapphire, the Ga-polar wings were inclined by 32° with respect to the substrate plane with smooth extended nonpolar a-plane GaN surfaces and polar c-plane GaN growth fronts. When compared with the template, the on-axis and off-axis XRD rocking curves indicated significant improvement in the crystalline quality by ELO for this mask orientation (on-axis 1700arcsec for the template, 380arcsec for the ELO sample, when rocked toward the GaN m axis), as verified by transmission electron microscopy (TEM). For growth mask stripes aligned along [0001]sapphire with GaN m-plane as growth fronts, the surface was composed of two {101¯1} planes making a 26° angle with the substrate plane. For this mask orientation XRD and TEM showed no improvement in the crystalline quality by ELO when compared to the non-ELO template.

High electron mobility was achieved in Al1−xInxN∕AlN∕GaN (x=0.20–0.12) heterostructure field effect transistors (HFETs) grown by metal-organic chemical vapor deposition. Reduction of In composition from 20% to 12% increased the room temperature equivalent two-dimensional-electron-gas density from 0.90×1013to1.64×1013cm−2 with corresponding electron mobilities of 1600 and 1410cm2∕Vs, respectively. The 10K mobility reached 17600cm2∕Vs for the nearly lattice-matched Al0.82In0.18N∕AlN∕GaN heterostructure with a sheet carrier density of 9.6×1012cm−2. For comparison, the AlInN∕GaN heterostructure without the AlN spacer exhibited a high sheet carrier density (2.42×1013cm−2) with low mobility (120cm2∕Vs) at room temperature. The high mobility in our samples is in part attributed to ∼1nm AlN spacer which significantly reduces the alloy scattering as well as provides a smooth interface. The HFETs having gate dimensions of 1.5×40μm2 and a 5μm source-drain separation exhibited a maximum transconductance of ∼200mS∕mm with good pinch-off characteristics and over 10GHz current gain cutoff frequency.