Defect reactions associated with divacancy elimination in silicon

Markevich, V. P.; Peaker, А. R.; Ластовский, С. Б.; Мурин, Л. И.; Lindström, J. L.

doi:10.1088/0953-8984/15/39/002

Cited by 56 publications

(52 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…DLTS measurements have been carried out by several groups, but unfortunately the location of the levels produced by V 2 O is still a matter of dispute [6][7][8]. While Pintilie et al [6] attributed a level at E c À 0:55 eV to V 2 OðÀ=0Þ; other authors [7,8] assigned ðÀ=0Þ and ð¼ =ÀÞ levels at E c À 0:46 eV and E c À 0:20 eV; respectively, to the defect (labeled X), which in agreement with the EPR data, anneals at TB320 C:…”

Section: Introductionmentioning

confidence: 99%

The formation, dissociation and electrical activity of divacancy-oxygen complexes in Si

Coutinho¹,

Jones²,

Öberg³

et al. 2003

Physica B: Condensed Matter

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 99%

The formation, dissociation and electrical activity of divacancy-oxygen complexes in Si

Coutinho¹,

Jones²,

Öberg³

et al. 2003

Physica B: Condensed Matter

View full text Add to dashboard Cite

“…1,2 Recently, an observation of V 2 O formation has also been reported in carbon-lean Cz-Si with a typical oxygen concentration of 10 18 cm Ϫ3 and presumably low concentrations of other impurities. 3 These reports have raised the question of why such a transformation has not been observed previously in ''ordinary'' FZ-and Cz-Si. Two possible suggestions can be made.…”

mentioning

confidence: 95%

“…This is due to recent reports on the observation of a double acceptor center identified as the divacancy-oxygen center (V 2 O). [1][2][3] These reports have considerably improved the understanding of the mechanisms of V 2 annealing and, at the same time, raised new questions concerning the origin of the dominant mechanism.…”

mentioning

confidence: 99%

Divacancy annealing in Si: Influence of hydrogen

et al. 2004

View full text Add to dashboard Cite

We have performed comparative studies of divacancy (V 2 ) annealing in hydrogenated and nonhydrogenated Si by deep level transient spectroscopy. It is shown that the nonhydrogenated samples demonstrate the formation of divacancy-oxygen (V 2 O) complex during annealing of V 2 , while the hydrogenated samples demonstrate annealing of V 2 without correlated growth of electrically active centers. No substantial formation of divacancy-hydrogen (V 2 H) complexes is observed in the hydrogenated samples. It is suggested that the dominant mechanism of V 2 annealing in hydrogen-rich Si is the interaction with hydrogen molecules (H 2 ) that results in the formation of the V 2 H 2 complex.The discussion on the mechanisms of impurity-assisted annealing of divacancy (V 2 ) in Si has attracted a renewed interest. This is due to recent reports on the observation of a double acceptor center identified as the divacancy-oxygen center (V 2 O). 1-3 These reports have considerably improved the understanding of the mechanisms of V 2 annealing and, at the same time, raised new questions concerning the origin of the dominant mechanism.From the first experimental observations of V 2 by electron paramagnetic resonance ͑EPR͒, it has been established that V 2 is more stable in float-zone ͑FZ͒ Si as compared to Czochralski ͑Cz͒ Si. 4 This difference has been explained by assuming the existence of two competing mechanisms: ͑i͒ the dissociation of V 2 and ͑ii͒ the migration of V 2 with subsequent annihilation/passivation at an impurity trap. It has been estimated that the V 2 dissociation has an activation energy of ϳ1.6 eV and the V 2 migration has an activation energy of ϳ1.3 eV. Since FZ-Si contains relatively small amounts of the impurity traps, most of the V 2 's are stable up to the temperature of dissociation. In contrast, Cz-Si is known to contain relatively high concentrations of impurities, and most of the V 2 's can be annealed by the migration mechanism with lower activation energy. It has been found in further studies that a fraction of the V 2 's can anneal in Cz-Si by interacting with interstitial oxygen (O i ), forming V 2 O. 5 A different situation can be observed in studies of the V 2 annealing by electrical characterization techniques such as deep level transient spectroscopy ͑DLTS͒. The thermal stability of V 2 in FZ-Si has been found to be higher than that in Cz-Si, in accordance with the EPR results. However, in contrast to EPR, the DLTS studies have yielded almost identical values of the activation energy for the V 2 annealing in FZ-Si and Cz-Si ͑with a lower annealing rate by a factor of ϳ2 in FZ-Si due to a smaller pre-exponential factor͒, which favors the migration mechanism in both of the materials. 6 It has also been established ͑see Ref. 6 and references therein͒ that the annealing of V 2 in both FZ-and Cz-Si does not result in the formation of electrically active centers. These observations exclude the interaction V 2 ϩO i →V 2 O as a dominant mechanism since the oxygen content is at least an order of magnitude hig...

show abstract

“…However, until recently, no reports on the formation of a double acceptor centre during annealing of V 2 in neither CZ-Si nor FZ-Si have existed in the literature. Recent results by Markevich et al [22], using electron-irradiated and carbon-lean CZ-samples, show a similar transformation of V 2 to V 2 O as in the DOFZ-Si samples. At least two explanations for the lack of V 2 O formation in previous studies using CZ samples can be put forward.…”

Section: Resultsmentioning

confidence: 53%

Defects and diffusion in high purity silicon for detector applications

Svensson

Monakhov

Alfieri

et al. 2004

phys. stat. sol. (c)

View full text Add to dashboard Cite

In this contribution we review some recent results on defects occurring after irradiation and thermal treatment of silicon detectors for ionizing radiation. In particular, the annealing of the prominent divacancy centre and the concurrent growth of a new double acceptor centre, assigned to the divacancyoxygen pair, is treated in detail. The detectors were fabricated using oxygenated high purity float zone (FZ) silicon wafers of n-type in order to improve the radiation hardness. The results obtained have important implication on our current understanding of the degradation of silicon detectors at high radiation fluences and suggest that a new concept for optimised impurity/defect engineering needs to be developed.

show abstract

Defect reactions associated with divacancy elimination in silicon

Cited by 56 publications

References 28 publications

The formation, dissociation and electrical activity of divacancy-oxygen complexes in Si

The formation, dissociation and electrical activity of divacancy-oxygen complexes in Si

Divacancy annealing in Si: Influence of hydrogen

Defects and diffusion in high purity silicon for detector applications

Contact Info

Product

Resources

About