The formation, dissociation and electrical activity of divacancy-oxygen complexes in Si

Coutinho, J.; Jones, R.; Öberg, Sven; Briddon, P.R.

doi:10.1016/j.physb.2003.09.143

Cited by 18 publications

(16 citation statements)

References 23 publications

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“…The assignment of the V 2 O pair as a double acceptor with electronic levels close to those of V 2 is fully consistent with theory [19,20] as well as with results from electron paramagnetic resonance measurements showing that the atomic structure of V 2 O is very close to that of V 2 [21]. Furthermore, since oxygen is the main impurity in the DOFZ-Si samples, Eq.…”

Section: Resultssupporting

confidence: 86%

“…(1) has an energy barrier that suppresses the formation of V 2 O and trapping by oxygen is only significant at sufficiently high temperatures and/or in the absence of more efficient traps for the migrating V 2 's. The latter explanation is, however, not favored by ab initio calculations [20] yielding no barrier for the reaction in Eq. (1), and the first suggestion appears to be more likely.…”

Section: Resultsmentioning

confidence: 99%

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Defects and diffusion in high purity silicon for detector applications

Svensson

Monakhov

Alfieri

et al. 2004

phys. stat. sol. (c)

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In this contribution we review some recent results on defects occurring after irradiation and thermal treatment of silicon detectors for ionizing radiation. In particular, the annealing of the prominent divacancy centre and the concurrent growth of a new double acceptor centre, assigned to the divacancyoxygen pair, is treated in detail. The detectors were fabricated using oxygenated high purity float zone (FZ) silicon wafers of n-type in order to improve the radiation hardness. The results obtained have important implication on our current understanding of the degradation of silicon detectors at high radiation fluences and suggest that a new concept for optimised impurity/defect engineering needs to be developed.

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Section: Resultssupporting

confidence: 86%

Section: Resultsmentioning

confidence: 99%

Defects and diffusion in high purity silicon for detector applications

Svensson

Monakhov

Alfieri

et al. 2004

phys. stat. sol. (c)

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“…This suggestion, however, is not supported by ab initio calculations where no barrier is observed for the interaction V 2 ϩO i →V 2 O. 9 Second, it is possible that ordinary FZ-Si and Cz-Si contain considerable concentrations of migrating species that interact with V 2 before it becomes mobile.…”

mentioning

confidence: 94%

“…These observations exclude the interaction V 2 ϩO i →V 2 O as a dominant mechanism since the oxygen content is at least an order of magnitude higher in Cz-Si than in FZ-Si, and V 2 O is expected to be electrically active with three electronic levels in the band gap. [7][8][9] The discrepancy between the observations by EPR and DLTS can be explained by taking into account that DLTS is applicable to investigations of low concentration of defects ͑only a few percent of the doping concentration͒, which is normally well below the concentration of main impurities like oxygen and carbon. Thus, no effect of impurity depletion by interaction with the defects will occur.…”

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confidence: 99%

Divacancy annealing in Si: Influence of hydrogen

et al. 2004

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We have performed comparative studies of divacancy (V 2 ) annealing in hydrogenated and nonhydrogenated Si by deep level transient spectroscopy. It is shown that the nonhydrogenated samples demonstrate the formation of divacancy-oxygen (V 2 O) complex during annealing of V 2 , while the hydrogenated samples demonstrate annealing of V 2 without correlated growth of electrically active centers. No substantial formation of divacancy-hydrogen (V 2 H) complexes is observed in the hydrogenated samples. It is suggested that the dominant mechanism of V 2 annealing in hydrogen-rich Si is the interaction with hydrogen molecules (H 2 ) that results in the formation of the V 2 H 2 complex.The discussion on the mechanisms of impurity-assisted annealing of divacancy (V 2 ) in Si has attracted a renewed interest. This is due to recent reports on the observation of a double acceptor center identified as the divacancy-oxygen center (V 2 O). 1-3 These reports have considerably improved the understanding of the mechanisms of V 2 annealing and, at the same time, raised new questions concerning the origin of the dominant mechanism.From the first experimental observations of V 2 by electron paramagnetic resonance ͑EPR͒, it has been established that V 2 is more stable in float-zone ͑FZ͒ Si as compared to Czochralski ͑Cz͒ Si. 4 This difference has been explained by assuming the existence of two competing mechanisms: ͑i͒ the dissociation of V 2 and ͑ii͒ the migration of V 2 with subsequent annihilation/passivation at an impurity trap. It has been estimated that the V 2 dissociation has an activation energy of ϳ1.6 eV and the V 2 migration has an activation energy of ϳ1.3 eV. Since FZ-Si contains relatively small amounts of the impurity traps, most of the V 2 's are stable up to the temperature of dissociation. In contrast, Cz-Si is known to contain relatively high concentrations of impurities, and most of the V 2 's can be annealed by the migration mechanism with lower activation energy. It has been found in further studies that a fraction of the V 2 's can anneal in Cz-Si by interacting with interstitial oxygen (O i ), forming V 2 O. 5 A different situation can be observed in studies of the V 2 annealing by electrical characterization techniques such as deep level transient spectroscopy ͑DLTS͒. The thermal stability of V 2 in FZ-Si has been found to be higher than that in Cz-Si, in accordance with the EPR results. However, in contrast to EPR, the DLTS studies have yielded almost identical values of the activation energy for the V 2 annealing in FZ-Si and Cz-Si ͑with a lower annealing rate by a factor of ϳ2 in FZ-Si due to a smaller pre-exponential factor͒, which favors the migration mechanism in both of the materials. 6 It has also been established ͑see Ref. 6 and references therein͒ that the annealing of V 2 in both FZ-and Cz-Si does not result in the formation of electrically active centers. These observations exclude the interaction V 2 ϩO i →V 2 O as a dominant mechanism since the oxygen content is at least an order of magnitude hig...

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“…The first ionization levels of these defects are assigned, at least partially, to the signals M1 and P, respectively. The appearance of the DL F coincides with the vanishing of the alleged A‐center, DL E. The accumulation of mobile A‐centers to V 2 O 2 ‐defects is a reasonable reaction path at elevated temperatures beyond the migration barrier of the A‐center . The appearance of V 2 O is known to correlate with the annealing of the divacancy V 2 .…”

Section: Resultsmentioning

confidence: 72%

DLTS characterization of proton‐implanted silicon under varying annealing conditions

Laven

Jelinek

Job

et al. 2014

Physica Status Solidi (b)

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Deep-level defects remaining in the upper half of the band-gap of silicon implanted with protons at fluences and annealing temperatures typically used for proton-implantation doping are investigated. For proton fluences in the range of several 1013 cm−2 to several 1014 cm−2, a multitude of deep-level defects remain active in comparatively high concentrations of up to 1013 cm−3 even after anneals at temperatures up to 500 °C. The detected deep-levels are assigned to known lattice defects on the basis of their electrical characteristics obtained by Fourier-transform DLTS measurements. Despite the low oxygen content of the float-zone silicon used, a large number of the detected defects are ascribed to (non-)hydrogenated vacancy-oxygen defects. The annealing temperature ranges, in which the deep-level defects were detected, are shown. Furthermore, the dependencies of the deep-level defects on the proton fluence and their depth distributions in the implantation profile are investigated

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The formation, dissociation and electrical activity of divacancy-oxygen complexes in Si

Cited by 18 publications

References 23 publications

Defects and diffusion in high purity silicon for detector applications

Defects and diffusion in high purity silicon for detector applications

Divacancy annealing in Si: Influence of hydrogen

DLTS characterization of proton‐implanted silicon under varying annealing conditions

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