Defect Properties of CuInS₂ Single Crystals Grown by Horizontal Bridgman Method with Controlling S Vapor Pressure

Abstract

The problem of the paradoxical motion of the falling chain is considered. Laboratory and numerical experiments are performed with the initially folded configurations. The velocity and the acceleration of the falling tip are analysed. It is shown that if the acceleration of the chain tip exceeds the gravitational acceleration g, it results in the appearance of a sharp peak in the time evolution of the tip velocity. An approximate analytical formula describing the rising part of the peak is presented and reasons for its limited applicability are discussed.

Incorporation of P in CuInS 2 using InP as a p‐type dopant

“…The hole mobilities of undoped samples (for example, µ p ~ 22 cm 2 /Vs at p ~ 1 × 10 15 cm -3 ) are higher than those of P-doped samples. Similar low mobilities to those of P-doped samples are reported for undoped p-type bulk crystals grown by the horizontal Bridgman method [5]. According to this report, the hole mobilities are µ p = 6~12 cm 2 /Vs (p = 1~5 × 10 14 cm -3 , −0.019 ≤ ∆y ≤ 0.007).…”

“…Broad emission bands, of which peaks are labeled P A to P C , are observed in the region of 1.44-1.47 eV. Similar emission bands are reported in undoped CuInS 2 [1,5]. In some undoped n-type samples, an exciton-related emission band at 1.53 eV was observed, though it is not clear in Fig.4 [6].…”

“…The acceptor activation energy of Cu vacancies (V Cu ) was reported to be 85-90 meV from Hall and PL measurements [5] and 100meV from PL measurement [1] for undoped p-type samples. The acceptor level of Cu-rich CuInS 2 was reported to be 150 meV, and its origin was In vacancies (V In ) or Cu atoms occupying the In vacancies [1].…”

Growth of CuInS 2 crystals from melt and their properties

“…Further experimental facts are required to make clear the relation between the predominant native defect and the properties. Figure 5(a) shows PL spectra at 10 K of the samples grown from the melt and the one grown by THM [7]. A broad D-A pair peak was only observed for both cases, though the peaks of the melt grown crystal shift to the low energy side.…”

Growth of Ge and P codoped p ‐type CuInS2 bulk crystals

“…This energy is deeper than that of unknown acceptor level, of which origin is probably V Cu since our crystals are slightly Cu-poor. The V Cu acceptor energy is reported as 85-90 meV from Hall measurement [7] and 100 meV from PL measurement [1]. The D-A pair emission band of the P doped CuInS 2 peaked at about 1.45 eV is attributed to the D-A pair emission from the S-vacancy related donor (V S ~ 35 meV [1]) to the P acceptor.…”