Defect-induced emission band in CdTe

Seto, Shûichi; Tanaka, A.; Takeda, F.; Matsuura, K.

doi:10.1016/0022-0248(94)90831-1

Cited by 53 publications

(23 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The nature of this band is supported by the results for CdTe crystal sample obtained from the bottom of the crystal bar where Y band strongly increases [50]. Thus, the intensity of the Y band may be used as an indicator of the dislocations in CdTe.…”

Section: Photoluminescence Of CD 1 à X Zn X Te Filmsmentioning

confidence: 57%

“…The PL band at 1.477 eV is due to Y center which corresponds to excitons bound on Te glide dislocations [49][50][51][52]. The nature of this band is supported by the results for CdTe crystal sample obtained from the bottom of the crystal bar where Y band strongly increases [50].…”

Section: Photoluminescence Of CD 1 à X Zn X Te Filmsmentioning

confidence: 57%

“…However, in that case we would have observed relative increasing of (e,A)-transition intensity with temperature raising [19] in the PL spectrum. Other very broad PL band at 1.497 eV corresponds to so-called D PL band, caused by the presence of point and extended defects of dislocation type as well as microstrains in the films [50,54].…”

Section: Photoluminescence Of CD 1 à X Zn X Te Filmsmentioning

confidence: 99%

See 2 more Smart Citations

Photoluminescence of CdZnTe thick films obtained by close-spaced vacuum sublimation

Kosyak

Znamenshchykov

Čerškus

et al. 2016

Journal of Luminescence

View full text Add to dashboard Cite

a b s t r a c tPolycrystalline Cd 1 À x Zn x Te thick films with thicknesses of about 30 μm have been deposited on a Mo coated glass substrate by means of close-spaced vacuum sublimation technique. X-ray diffraction measurements have shown that the films obtained have only cubic zinc blende phase. The influence of Zn concentration on the photoluminescence (PL) spectra of Cd 1 À x Zn x Te films was investigated. This let us determine the nature and energy structure of the intrinsic defects and residual impurities in the films. The presence of the most intense acceptor bound exciton A°X-line for x ¼ 0.10 and the lines of localized excitons (x ¼ 0.32 À 0.44) in PL spectra of Cd 1 À x Zn x Te films indicates their fairly good optical quality as well as the p-type conductivity. There were also other intensive broad PL bands, caused by the recombination of donor-acceptor pairs involving complex acceptor centers, extended defects of dislocation type, and microstress in the films. It was also established a correlation between the broadening of exciton lines and the values of microstress in Cd 1 À x Zn x Te thick films. Taking into account the energy position of exciton lines, the concentration dependence of the band gap for the Cd 1 À x Zn x Te thick films is presented.

show abstract

Section: Photoluminescence Of CD 1 à X Zn X Te Filmsmentioning

confidence: 57%

Section: Photoluminescence Of CD 1 à X Zn X Te Filmsmentioning

confidence: 57%

Section: Photoluminescence Of CD 1 à X Zn X Te Filmsmentioning

confidence: 99%

See 1 more Smart Citation

Photoluminescence of CdZnTe thick films obtained by close-spaced vacuum sublimation

Kosyak

Znamenshchykov

Čerškus

et al. 2016

Journal of Luminescence

View full text Add to dashboard Cite

show abstract

“…In this case, the energy of LO-phonon is about 21 meV. According to [65][66][67][68] the PL band at 1.477 eV is due to Y center which corresponds to excitons bound on Te glide dislocations. Thus, the intensity of the Y band may be used as an indicator of the presence of dislocations in CdTe.…”

Section: Photoluminescence Studiesmentioning

confidence: 90%

Composition dependence of structural and optical properties of Cd1−Zn Te thick films obtained by the close-spaced sublimation

Kosyak

Znamenshchykov

Čerškus

et al. 2016

Journal of Alloys and Compounds

View full text Add to dashboard Cite

“…This transition has been associated with excitons bound to extended defects. [23][24][25][26] Based on the discussion of the Z-band above, we speculate that the radiative mechanism here is similar to the DAP mechanism for the Z-band. Finally, we mention that no "rainbow" coloration could be identified in the spectrum images for the CdCl 2 -treated sample.…”

Section: Resultsmentioning

confidence: 51%

Explanation of red spectral shifts at CdTe grain boundaries

Moseley

Al‐Jassim

Moutinho

et al. 2013

Applied Physics Letters

View full text Add to dashboard Cite

The best research-cell efficiencies for CdTe thin-film solar cells have recently increased from 17.3% to 20.4%. Despite these impressive recent gains, many improvements in device technology are necessary to reach the detailed-balance efficiency limit for CdTe-based (singlejunction, non-concentrator) solar cells of ~32%. Improvements will increasingly rely on knowledge of the fundamental relationships between processing, electrical properties of defects, and device performance. In this study, scanning electron microscope (SEM)-based cathodoluminescence (CL) spectrum imaging was used to examine these fundamental relationships. In CL spectrum imaging we collect a spectrum per pixel in a 256 × 256 pixel SEM image by synchronizing a cryogenic silicon charge-coupled device with the electron-beam positioning. High spatial resolution photon energy maps obtained with this technique can reveal intricate luminescence phenomena that are not apparent in spectroscopic data.

show abstract

Defect-induced emission band in CdTe

Cited by 53 publications

References 15 publications

Photoluminescence of CdZnTe thick films obtained by close-spaced vacuum sublimation

Photoluminescence of CdZnTe thick films obtained by close-spaced vacuum sublimation

Composition dependence of structural and optical properties of Cd1−Zn Te thick films obtained by the close-spaced sublimation

Explanation of red spectral shifts at CdTe grain boundaries

Contact Info

Product

Resources

About