Defect-Free Self-Catalyzed GaAs/GaAsP Nanowire Quantum Dots Grown on Silicon Substrate

Wu, Jiang; Ramsay, Andrew J.; Sanchez, Ana M.; Zhang, Yunyan; Kim, Dongyoung; Brossard, Frederic S. F.; Hu, Xian; Benamara, Mourad; Ware, Morgan E.; Mazur, Yuriy I.; Salamo, Gregory J.; Aagesen, Martin; Wang, Zhiming; Liu, Huiyun

doi:10.1021/acs.nanolett.5b04142

Cited by 42 publications

(43 citation statements)

References 54 publications

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“…12 For example, strain-free quantum dots (QDs) can be grown by stacking the material axially. 13 Therefore, QDs can be fabricated with a wider range of materials as compared with the traditional Stranski-Krastanow QDs. [14][15][16][17] Among all the III−V compound semiconductors, GaAsP is one of the most promising choices for photovoltaics, because its band gap can cover wavelengths ranging from green (550 nm) to near infrared (860 nm) at room temperature.…”

Section: Introductionmentioning

confidence: 99%

GaAsP nanowires and nanowire devices grown on silicon substrates

et al. 2017

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Ternary GaAsP nanowires (NWs) have gained great attention due to their structure-induced novel properties and band gap that can cover the working wavelength from green to infrared. However, the growth and hence applications of selfcatalyzed GaAsP NWs are troubled by the difficulties in controlling P and the complexities in growing ternary NWs. In this work, self-catalyzed core-shell GaAsP NWs were successfully grown and demonstrated almost stacking-fault-free zinc blend crystal structure. By using these core-shell GaAsP NWs, single NW solar cells have been fabricated and a single NW world record efficiency of 10.2% has been achieved. Those NWs also demonstrated their potential application in water splitting. A wafer-scale solar-to-hydrogen conversion efficiency of 0.5% has been achieved despite the low surface coverage. These results open up new perspectives for integrating III−V nanowire photovoltaics on a silicon platform by using self-catalyzed GaAsP core−shell nanowires.

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Section: Introductionmentioning

confidence: 99%

GaAsP nanowires and nanowire devices grown on silicon substrates

et al. 2017

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“…An attractive alternative fabrication approach includes synthesis of multi-shell heterostructures with embedded 1D quantum wires or zero-dimensional (0D) quantum dots (QDs). [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17] Achieving the strong confinement limit in such hybrid QD-NW systems can lead to substantial performance improvements in the characteristics of advanced nano-emitters and third-generation solar cells. 11,15 Ultimately, it will allow realization of single photon emissions, 4,7,8 singlespin detection, 13 single-shot electrical readout 3 and generation of entangled photon pairs, 12 which can pave the way for innovative applications of nanowires in quantum photonics and quantum information technologies.…”

Section: Introductionmentioning

confidence: 99%

Strongly polarized quantum-dot-like light emitters embedded in GaAs/GaNAs core/shell nanowires

et al. 2016

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Recent developments in fabrication techniques and extensive investigations of the physical properties of III-V semiconductor nanowires (NWs), such as GaAs NWs, have demonstrated their potential for a multitude of advanced electronic and photonics applications. Alloying of GaAs with nitrogen can further enhance the performance and extend the device functionality via intentional defects and heterostructure engineering in GaNAs and GaAs/GaNAs coaxial NWs. In this work, it is shown that incorporation of nitrogen in GaAs NWs leads to formation of three-dimensional confining potentials caused by short-range fluctuations in the nitrogen composition, which are superimposed on long-range alloy disorder. The resulting localized states exhibit a quantum-dot like electronic structure, forming optically active states in the GaNAs shell. By directly correlating the structural and optical properties of individual NWs, it is also shown that formation of the localized states is efficient in pure zinc-blende wires and is further facilitated by structural polymorphism. The light emission from these localized states is found to be spectrally narrow (∼50-130 μeV) and is highly polarized (up to 100%) with the preferable polarization direction orthogonal to the NW axis, suggesting a preferential orientation of the localization potential. These properties of self-assembled nano-emitters embedded in the GaNAs-based nanowire structures may be attractive for potential optoelectronic applications.

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“…Common approaches to optimize the lasing threshold of a NWL include the introduction of single or multiple quantum wells, [22][23][24][25][26][27] quantum dots 28,29 or photonic crystals. 16,30 These methods rely on optimizing either the luminescence quantum efficiency QE = k r /(k r + k nr ) (where k r and k nr are the radiative and non-radiative rates, respectively 31 ) or the modegain spatial overlap.…”

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confidence: 99%