Defect evolution and accompanied change of electrical properties during the GaN growth by metalorganic chemical vapor deposition

GaN Based Ultraviolet Photodetectors

“…A long time annealing and a suitable thickness of AlN buffer layer are very important to the growth of high quality GaN epilayers. Besides the growth condition of low-temperature AlN buffer layer, the V/III ratio in the initial growth stage has an important influence on the quality of a GaN epilayer grown by MOCVD, and the quality of GaN epilayer could be improved by employing a lower V/III ratio in the initial growth stage and intentionally prolonging the island coalescence process (Zhao et al, 2007b(Zhao et al, , 2009a. After optimizing the growth conditions, high-mobility MOCVDgrown n-type GaN films of about 4 m in thickness were reported (Zhao et al, 2006a).…”

Luminescence properties of reduced SrO–Al2O3–GeO2 glasses

“…For example, the revolution in semiconductor industry is due to the realization of control and use of defects, e.g. n-type and p-type doping semiconductor materials have been used in LED chips for solid state lighting [6]. Defects controlling and mechanical properties improvement in alloys can be realized by adjusting the parameters during the semi-solid metal (SSM) forming processes [7].…”