2016
DOI: 10.1021/acsami.6b01539
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Defect Engineering of Lead-Free Piezoelectrics with High Piezoelectric Properties and Temperature-Stability

Abstract: The high piezoelectricity of ABO3-type lead-free piezoelectric materials can be achieved with the help of either morphotropic phase boundary (MPB) or polymorphic phase transition (PPT). Here, we propose a new defect engineering route to the excellent piezoelectric properties, in which doped smaller acceptor and donor ions substituting bivalent A-sites are utilized to bring local lattice distortion and lower symmetry. A concrete paradigm is presented, (Li-Al) codoped BaTiO3 perovskite, that exhibits a largely t… Show more

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Cited by 92 publications
(38 citation statements)
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“…The small ionic radii with high mobility of Li + can facilitate ceramic densification and improve its sinterability, which is responsible for the piezoelectric improvement. In addition, a giant mechanical quality factor Q m of ~2100 is achieved in (Li + +Al 3+ ) co‐doped BT ceramic 113 . On the other hand, the d 33 of BT ceramic can be improved by introducing some combinations of aliovalent ions to replace Ti 4+ .…”
Section: Piezoelectricitymentioning
confidence: 99%
“…The small ionic radii with high mobility of Li + can facilitate ceramic densification and improve its sinterability, which is responsible for the piezoelectric improvement. In addition, a giant mechanical quality factor Q m of ~2100 is achieved in (Li + +Al 3+ ) co‐doped BT ceramic 113 . On the other hand, the d 33 of BT ceramic can be improved by introducing some combinations of aliovalent ions to replace Ti 4+ .…”
Section: Piezoelectricitymentioning
confidence: 99%
“…And smaller grain size results in smaller domain size and could lead to an increased d 33 due to the enhancement in the extrinsic contribution [47,48]. Additionally, the electrically switchable P D originated from defect-dipoles could also contribute to an increased d 33 [49]. As a result, a moderate level of Bi 2 O 3 deficiency may not lead to a poor d 33 .…”
Section: Electric Propertiesmentioning
confidence: 99%
“…Size effects of doping ions are found in almost all dielectric materials, e.g. in both binary oxide and ABO 3 type perovskite 10, 1519 . As the CP is determined by the defect rather than the average structure, the preparation approach and process conditions of the synthesis of CP materials are therefore critical, affecting the formation of defect structures and thus influencing the dielectric behavior.…”
Section: Introductionmentioning
confidence: 99%