Stimulated by the excellent colossal permittivity (CP) behavior achieved in In+Nb co-doped rutile TiO2, in this work we investigate the CP behavior of Ga and Nb co-doped rutile TiO2, i.e., (Ga(0.5)Nb(0.5))(x)Ti(1-x)O2, where Ga(3+) is from the same group as In(3+) but with a much smaller ionic radius. Colossal permittivity of up to 10(4)-10(5) with an acceptably low dielectric loss (tan δ = 0.05-0.1) over broad frequency/temperature ranges is obtained at x = 0.5% after systematic synthesis optimizations. Systematic structural, defect, and dielectric characterizations suggest that multiple polarization mechanisms exist in this system: defect dipoles at low temperature (∼10-40 K), polaronlike electron hopping/transport at higher temperatures, and a surface barrier layer capacitor effect. Together these mechanisms contribute to the overall dielectric properties, especially apparent observed CP. We believe that this work provides comprehensive guidance for the design of new CP materials.

The diode and photovoltaic effects of BiFeO3 and Bi0.9Sr0.1FeO(3-δ) polycrystalline thin films were investigated by poling the films with increased magnitude and alternating direction. It was found that both electromigration of oxygen vacancies and polarization flipping are able to induce switchable diode and photovoltaic effects. For the Bi0.9Sr0.1FeO(3-δ) thin films with high oxygen vacancy concentration, reversibly switchable diode and photovoltaic effects can be observed due to the electromigration of oxygen vacancies under an electric field much lower than its coercive field. However, for the pure BiFeO3 thin films with lower oxygen vacancy concentration, the reversibly switchable diode and photovoltaic effect is hard to detect until the occurrence of polarization flipping. The switchable diode and photovoltaic effects can be explained well using the concepts of Schottky-like barrier-to-Ohmic contacts resulting from the combination of oxygen vacancies and polarization. The sign of photocurrent could be independent of the direction of polarization when the modulation of the energy band induced by oxygen vacancies is large enough to offset that induced by polarization. The photovoltaic effect induced by the electromigration of oxygen vacancies is unstable due to the diffusion of oxygen vacancies or the recombination of oxygen vacancies with hopping electrons. Our work provides deep insights into the nature of diode and photovoltaic effects in ferroelectric films, and will facilitate the advanced design of switchable devices combining spintronic, electronic, and optical functionalities.

efficient/controllable photoexcited charge separation. [1,2] So far, the most commonly investigated SFPO is based on BiFeO 3 , [1,3] but its bandgap of ≈2.7 eV is not low enough to absorb the full spectrum of the visible light. The real potential of SFPO in photovoltaic applications significantly drives the exploring of new perovskite oxides with efficient visible light absorption. Recently, the realization of defect-driven-ferroelectricity and low bandgap states (even down to ≈1.1 eV) in perovskites (KNbO 3 ) 1−x (BaNi 1/2 Nb 1/2 O 3−δ ) x (KN-BNN) suggests that ferroelectricity and low bandgap can be simultaneously achieved by compositional modification. With two different transition-metal cations at the B-site in highly oxygen-vacancytolerable perovskite oxides, one cation (Nb 5+ ) provides off-center distortion and polarization, and the other (Ni 2+ ) decreases the difference in electronegativity within the perovskite BO bonds to create electronic states in the gap. The leaky conductivity associated with accommodation of Ni 2+ -oxygen vacancy combinations results in the loss of piezoelectricity especially at room temperature, which is generally the case for simple perovskite oxides. [4] Efforts have been taken to improve the tolerance of oxygen vacancies in order to keep the ferroelectricity, such as modifying the amount of BaNi 1/2 Nb 1/2 O 3−d (BNN) in the solid solution in order to decrease the concentration of oxygen vacancies, i.e., 0.98KN-0.02BNN, and 0.65PbTiO [5,6] or using more complex perovskite oxides with layered structure LaCoO 3 -mediated BiTiO 3 (E g = 2.65 eV). [7] However, an effective strategy to achieve an appropriate balance between the defect-induced low bandgap and defect-induced electrically leaky ferroelectricity is still currently lacking. Following the defect-engineered strategy, we present an efficient route to change the generally negative role of oxygen vacancies to be piezoelectrically/ferroelectrically friendly. Guided by the point-defect mediated large piezoelectricity in ferroelectric crystals, [8] defect-dipoles formed by dopant-oxygen vacancy pairs are preferentially coupled with the strong spontaneous polarization from host according to general symmetry-conforming property of point defects. [9][10][11] Moreover, both experiments and theoretical calculations provide strong evidence that the dopant-oxygen obtain low bandgap (i.e., 1.1-3.8 eV), the electrically leaky perovskite oxides generally lose piezoelectricity mainly due to oxygen vacancies. Therefore, the development of highly piezoelectric ferroelectric semiconductor remains challenging. Here, inspired by point-defect-mediated large piezoelectricity in ferroelectrics especially at the morphotropic phase boundary (MPB) region, an efficient strategy is proposed by judiciously introducing the gap states at the MPB where defect-induced local polar heterogeneities are thermodynamically coupled with the host polarization to simultaneously achieve high piezoelectricity and low bandgap. A concrete example, Ni 2+ -mediated (1...

Electron-pinned defect dipoles, in the form of highly stable triangle-diamond and/or triangle-linear dopant defect clusters with well defined relative positions for Ti reduction, are present in rutile In + Ta co-doped TiO2 for the colossal permittivity and low loss.

Three poly(organosiloxanes) (hydromethyl-, dimethyl-, and epoxymethylsiloxane) of different chain lengths and pendant groups and their mixtures of dimethyl (DMC) or diethyl carbonates (DEC) were applied in the modification of fumed silica nanoparticles (FSNs). The resulting modified silicas were studied in depth using 29 Si, 1 H, and 13 C solid-state NMR spectroscopy, elemental analysis, and nitrogen adsorption-desorption (BET) analysis. The obtained results reveal that the type of grafting, grafting density, and structure of the grafted species at the silica surface depend strongly on the length of organosiloxane polymer and on the nature of the “green” additive, DMC or DEC. The spectral changes observed by solid-state NMR spectroscopy suggest that the major products of the reaction of various organosiloxanes and their DMC or DEC mixtures with the surface are D (RR’Si(O 0.5 ) 2 ) and T (RSi(O 0.5 ) 3 ) organosiloxane units. It was found that shorter methylhydro (PMHS) and dimethylsiloxane (PDMS) and their mixtures with DMC or DEC form a denser coverage at the silica surface since S BET diminution is larger and grafting density is higher than the longest epoxymethylsiloxane (CPDMS) used for FSNs modification. Additionally, for FSNs modified with short organosiloxane PMHS/DEC and also medium organosiloxane PDMS/DMC, the dense coverage formation is accompanied by a greater reduction of isolated silanols, as shown by solid-state 29 Si NMR spectroscopy, in contrast to reactions with neat organosiloxanes. The surface coverage at FSNs with the longest siloxane (CPDMS) greatly improves with the addition of DMC or DEC. The data on grafting density suggest that molecules in the attached layers of FSNs modified with short PMHS and its mixture of DMC or DEC and medium PDMS and its mixture of DMC form a “vertical” orientation of the grafted methylhydrosiloxane and dimethylsiloxane chains, in contrast to the reaction with PDMS/DEC and epoxide methylsiloxane in the presence of DMC or DEC, which indicates a “horizontal” chain orientation of the grafted methyl and epoxysiloxane molecules. This study highlights the major role of solid-state NMR spectroscopy for comprehensive characterization of solid surfaces. Graphical abstract Electronic supplementary material The online version of this article (10.1186/s11671-019-2982-2) contains supplementary material, which is available to authorized users.

This work investigates the synthesis, chemical composition, defect structures and associated dielectric properties of (Mg2+, Ta5+) co-doped rutile TiO2 polycrystalline ceramics with nominal compositions of (Mg2+ 1/3Ta5+ 2/3)xTi1−xO2. Colossal permittivity (>7000) with a low dielectric loss (e.g. 0.002 at 1 kHz) across a broad frequency/temperature range can be achieved at x = 0.5% after careful optimization of process conditions. Both experimental and theoretical evidence indicates such a colossal permittivity and low dielectric loss intrinsically originate from the intragrain polarization that links to the electron-pinned defect clusters with a specific configuration, different from the defect cluster form previously reported in tri-/pent-valent ion co-doped rutile TiO2. This work extends the research on colossal permittivity and defect formation to bi-/penta-valent ion co-doped rutile TiO2 and elucidates a likely defect cluster model for this system. We therefore believe these results will benefit further development of colossal permittivity materials and advance the understanding of defect chemistry in solids.

Currently, various electronic devices make our life more and more safe, healthy, and comfortable, but at the same time, they produce a large amount of nondegradable and nonrecyclable electronic waste that threatens our environment. In this work, we explore an environmentally friendly and flexible mechanical sensor that is biodegradable and recyclable. The sensor consists of a bacterial cellulose (BC) hydrogel as the matrix and imidazolium perchlorate (ImClO 4 ) molecular ferroelectric as the functional element, the hybrid of which possesses a high sensitivity of 4 mV kPa −1 and a wide operational range from 0.2 to 31.25 kPa, outperforming those of most devices based on conventional functional biomaterials. Moreover, the BC hydrogel can be fully degraded into glucose and oligosaccharides, while ImClO 4 can be recyclable and reused for the same devices, leaving no environmentally hazardous electronic waste.

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