Defect-engineering-enhanced electrical manipulation of anisotropic excitons in two-dimensional ReS2

Wu, Shuyi; Pan, Wen; Zhang, Jinlei; Ma, Chunlan; Shan, Yun; Liu, Lizhe

doi:10.1016/j.surfin.2021.101562

Cited by 5 publications

(7 citation statements)

References 44 publications

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“…Sulfur vacancies behaving like donors in ReS 2 nanostructures and monolayers have been verified. 63,64 According to the ARPES results, the variation in the electron concentration of the short aging and long aging surfaces could be attributed to the physically adsorbed and chemically adsorbed oxygen/water molecules on the ReS 2 surface respectively. It is inferred that in the beginning, sulfur vacancies were created by the reaction of ambient oxygen/water molecules and the ReS 2 surface.…”

Section: Resultsmentioning

confidence: 99%

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Electrical and optoelectronic anisotropy and surface electron accumulation in ReS₂ nanostructures

Bangolla,

Yusuf Fakhri,

Lin

et al. 2023

Nanoscale

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Section: Resultsmentioning

confidence: 99%

“…69 The S-vacancies in ReS 2 can be attributed to the donor levels close to the CBM edge. 63 Chalcogen vacancy defects in TMDs 70,71 are common due to their low vacancy formation energy compared to metal vacancies. 59 Hence, the dark defects are likely the sulfur monovacancies.…”

Section: Transfer Length Methods (Tlm)mentioning

confidence: 99%

Electrical and optoelectronic anisotropy and surface electron accumulation in ReS₂ nanostructures

Bangolla,

Yusuf Fakhri,

Lin

et al. 2023

Nanoscale

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“…[205,222] Moreover, the excitonic transitions can be manipulated by the application of electric fields, whose sensitivity can be enhanced by creating vacancy defects in ReS 2 . [224] The energy of ground and first four excited states in ReS 2 follow the hydrogenic Rydberg series of energy levels of 3D excitonic states. [210] A series of at least five emissions corresponding to transitions involving these ground and excited excitonic states can be resolved using polarized low-temperature photoluminescence, as shown in Figure9b.…”

Section: (15 Of 42)mentioning

confidence: 99%

“…[ 205,222 ] Moreover, the excitonic transitions can be manipulated by the application of electric fields, whose sensitivity can be enhanced by creating vacancy defects in ReS 2 . [ 224 ]…”

Section: Structure Layer Identification and Properties Of Res2 And Rese2mentioning

confidence: 99%

2D Rhenium Dichalcogenides: From Fundamental Properties to Recent Advances in Photodetector Technology

Satheesh

Jang

Pandit

et al. 2023

Adv Funct Materials

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PbS, HgCdTe, etc. [4] These materials are currently dominating the industry due to their mature technology readiness level. The high stiffness of these materials in bulk crystal or epitaxial layer form has prompted interest on low-dimensional materials for flexible photodetectors, an emerging prospective toward wearable electronics. [5,6] In order to meet with the speediness at which the present electronics industry is evolving, photodetectors featuring diverse functionalities with excellent figures of merits (high photo gain, ultrafast photoresponse, broad spectral selectivity) and facile integration with existing universal platforms like complementary metal-oxide semiconductor (CMOS) and silicon photonics, are highly desired. [7][8][9] Given the atomically thin nature, strong light-matter coupling, ultrafast carrier dynamics, flexibility, dangling bond free surface, and effective property manipulation by artificial stacking of different layered materials one over the other (called vdW stacking) without the restraints of lattice matching, 2D materials stand out as promising candidates for high performance photodetectors. During the past one decade, several 2D materials have witnessed a remarkable journey in this arena and have been the topic of several review articles. [10][11][12][13][14][15][16][17][18][19] The nearly constant light absorption in the entire electromagnetic spectrum witnessed in graphene due to gapless energy-momentum dispersion has permitted realization of first 2D material based photodetectors operating over a broad spectral range from UV to terahertz limit. [20][21][22][23] Furthermore, the high carrier mobility and associated ultrafast carrier dynamics in graphene enabled extremely fast photodetection, [24] which has been found beneficial to process images faster than existing photodetectors. [25,26] Meanwhile, layered transition metal dichalcogenides (TMDs), represented generically as MX 2 , where M is a transition metal element of groups 4-10 and X is a chalcogen atom (S, Se, Te), have become more popular due to their exotic electronic and optical properties. [27][28][29][30] In contrast to graphene, most sulfides-and selenides-based Group VI and Group VII TMDs (MoS 2 , WS 2 , ReS 2 , MoSe 2 , WSe 2 , ReSe 2 ) have a band gap covering the visible-near infrared spectral range. [31,32] For instance, the most extensively studied Group VI TMDs such as MoS 2 and WS 2 at monolayer thickness limit are direct bandgap

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“…Our previous works indicate that anisotropic excitons are formed along the Re-Re chain direction where the charge carriers are more mobile and diffuse faster under laser irradiation. 39,40 Therefore, the strongest charge interaction occurs in the direction, which brings about the largest matrix element for the electrons transition between ReS 2 and RhB according to Fermi's golden rule. Accordingly, the highest electron transition probability and thus the strongest Raman enhancement occurs in the Raman scattering process, leading to the angular dependence of the Raman enhancement.…”

Section: Sers Properties Of T@td-res 2 Filmsmentioning

confidence: 99%

Significantly increased Raman enhancement enabled by hot-electron-injection-induced synergistic resonances on anisotropic ReS₂ films

Pan

et al. 2023

Phys. Chem. Chem. Phys.

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Defect-engineering-enhanced electrical manipulation of anisotropic excitons in two-dimensional ReS2

Cited by 5 publications

References 44 publications

Electrical and optoelectronic anisotropy and surface electron accumulation in ReS₂ nanostructures

Electrical and optoelectronic anisotropy and surface electron accumulation in ReS₂ nanostructures

2D Rhenium Dichalcogenides: From Fundamental Properties to Recent Advances in Photodetector Technology

Significantly increased Raman enhancement enabled by hot-electron-injection-induced synergistic resonances on anisotropic ReS₂ films

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Defect-engineering-enhanced electrical manipulation of anisotropic excitons in two-dimensional ReS2

Cited by 5 publications

References 44 publications

Electrical and optoelectronic anisotropy and surface electron accumulation in ReS2 nanostructures

Electrical and optoelectronic anisotropy and surface electron accumulation in ReS2 nanostructures

2D Rhenium Dichalcogenides: From Fundamental Properties to Recent Advances in Photodetector Technology

Significantly increased Raman enhancement enabled by hot-electron-injection-induced synergistic resonances on anisotropic ReS2 films

Contact Info

Product

Resources

About

Electrical and optoelectronic anisotropy and surface electron accumulation in ReS₂ nanostructures

Electrical and optoelectronic anisotropy and surface electron accumulation in ReS₂ nanostructures

Significantly increased Raman enhancement enabled by hot-electron-injection-induced synergistic resonances on anisotropic ReS₂ films