Defect diffusion during ion implantation into GaAs

Wilk, E.; Wesch, W.; Hehl, K.

doi:10.1002/pssa.2210760266

Cited by 16 publications

(2 citation statements)

References 4 publications

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“…In previous papers [3,4] we have represented the optical properties of N+-implanted GaAs in dependence on the ion dose, the implantation temperature, and the depth. I n comparison with the results of Rutherford backscattering spectrometry (RBS) it was shown that in ion-implanted GaAs two different types of radiation damage can be distinguished: (i) amorphous regions which are connected with a short absorption tail near the fundamental absorption edge and a refractive index change of the order of about 10 yo and (ii) high concentrations of point defects and/or agglomerations of them causing a long absorption tail near the fundamental absorption edge with almost no refractive index change.…”

Section: Introductionmentioning

confidence: 99%

Near-Edge Optical Absorption Behaviour in Weakly Damaged Ion-Implanted GaAs

Wendler

Wesch

Götz

1986

phys. stat. sol. (a)

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The long exponential absorption tail near the fundamental absorption edge occuring in weakly damaged ion implanted GaAs is investigated in dependence on the ion species (N+, Art, Zn+, and Cd+ ions are used) and on the ion fluence. The results show that characteristic native defects are renponsible for the observed absorption behaviour. The near edge absorption coefficient as well as the characteristic tailing energy increase with the energy density deposited in nuclear processes and reach both a maximum value for a critical energy density. From the optical measurements and considering the results of temperature dependent RBS measurements conclusions are made concerning the nature of defects in the weakly damaged GaAs layers.Der exponentielle Absorptionsauslaufer im Bereich der Fundamentalabsorptionskante schwach geschiidigter ionenimplantierter GaAs-Schichten wird in Abhangigkeit von der Art der implantierten Ionen (N+, Ar+, Zn+, Cdf) und von der Ionendosis untersucht. Die Ergebnisse zeigen, dal3 das beobachtete Absorptionsverhalten im bandkantennahen Bereich durch charakteristische Eigendefekte verursacht wird. Sowohl der Absorptionskoeffizient als auch die mit dem Anstieg des Absorptionslausaufers verknupfte charakteristische Energie nehmen mit wachsender nuklear deponierter Energiedichte zu und erreichen Maximalwerte fur eine kritische Energiedichte. Aus den Ergebnissen der optischen Messungen und unter Berucksichtigung von Resultaten temperaturabhangiger RBS-Messungen werden SchluBfolgerungen bezuglich der Natur der Defekte in schwach geschadigten GaAs-Schichten gezogen.

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Section: Introductionmentioning

confidence: 99%

Near-Edge Optical Absorption Behaviour in Weakly Damaged Ion-Implanted GaAs

Wendler

Wesch

Götz

1986

phys. stat. sol. (a)

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“…For amorphous layers created a t low temperature the threshold energy density Eihfor recrystallization increases with increasing layer thickness, if the thickness of the amorphous layers exceeds the absorption length dabs for the used laser light (see Table 2). However, implantation at room temperature creates layer structures consisting of an amorphous layer and an underlying crystalline damaged layer with a highly elevated absorption coefficient [13]. I n these cases the conditions for the laser energy deposition are modified especially for the wavelength A = 1.06 pm, and the connection between the molten depth and the laser energy density is not so definite.…”

Section: Recrystallixationmentioning

confidence: 99%

Rapid annealing of ion-implanted GaAs

Wesch

Götz

1986

phys. stat. sol. (a)

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Because of the specific properties of GaAs, the annealing of implantation damage as well as the electric activation of dopants present more complez processes compared with silicon. Starting from the problems connected with conventional furnace annealing of GaAs, the results obtained with short time annealing in the solid and liquid phase are discussed. By means of liquid phase epitaxy using ns‐laser pulses, extremely high carrier concentrations can be achieved, but the mobility of the carriers is limited by matrix‐specific defects. Optical and RBS investigations give information about the defect types existing in pulsed laser irradiated GaAs layers, and the connection with the electrical properties of the layers is demonstrated. Possible ways for a reduction of the concentration of such defects as well as the improvement of the electrical properties are discussed.

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Optical absorption behaviour of magnesium‐implanted GaAs

Hörig

Bouamama

Neumann

et al. 1989

Cryst. Res. Technol.

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Optical absorption spectra of magnesium implanted GaAs single crystals are measured in the photon energy range below the fundamental absorption edge. It is found that the absorption coefficient increases with increasing fluence up to a saturation value of about 5 . 104 cm-l at 1.36 eV. The results are compared with optical measurements on GaAs single crystals implanted with other ions.Optische Absorptionsspektren von magnesium-implantierten GaAs-Einkristallen wurden im Photonenenergiebereich unterhalb der fundamentalen Absorptionskante gemessen. Es zeigte sich, daB der Absorptionskoeffizient mit wachsender Dosis bis zu einem Sattigungswert von etwa 5 . lo4 cm-l bei 1.36 eV ansteigt. Die Ergebnisse werden mit opt,ischenMessungen an mit anderen Ionen implantierten GaAs-Einkristallen verglichen.

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Defect diffusion during ion implantation into GaAs

Cited by 16 publications

References 4 publications

Near-Edge Optical Absorption Behaviour in Weakly Damaged Ion-Implanted GaAs

Near-Edge Optical Absorption Behaviour in Weakly Damaged Ion-Implanted GaAs

Rapid annealing of ion-implanted GaAs

Optical absorption behaviour of magnesium‐implanted GaAs

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