2020
DOI: 10.1016/j.apcatb.2019.118145
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Defect as the essential factor in engineering carbon-nitride-based visible-light-driven Z-scheme photocatalyst

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Cited by 64 publications
(19 citation statements)
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“…[28,29] For addressing these challenges, various strategies have been adopted so as to improve the photocatalytic performance of the original g-C 3 N 4 , such as nanostructure design, [30][31][32] doping of metallic and nonmetallic elements, [33][34][35][36] construction of heterojunctions, [37][38][39][40] copolymerization, [41][42][43] defect engineering, and dye sensitization. [44,45] Among them, the controllable synthesis of nanoscale morphology is one of the resultful means. Because of its characteristics including appropriate porosity, massive surface groups for anchoring, large specific surface area, slim thickness and as well as high aspect ratio, semiconductor nanosheets describe a brilliant future.…”
mentioning
confidence: 99%
“…[28,29] For addressing these challenges, various strategies have been adopted so as to improve the photocatalytic performance of the original g-C 3 N 4 , such as nanostructure design, [30][31][32] doping of metallic and nonmetallic elements, [33][34][35][36] construction of heterojunctions, [37][38][39][40] copolymerization, [41][42][43] defect engineering, and dye sensitization. [44,45] Among them, the controllable synthesis of nanoscale morphology is one of the resultful means. Because of its characteristics including appropriate porosity, massive surface groups for anchoring, large specific surface area, slim thickness and as well as high aspect ratio, semiconductor nanosheets describe a brilliant future.…”
mentioning
confidence: 99%
“…In addition, according to the BET results (Figure S2), P-g-C 3 N 4 showed a larger specific surface area than g-C 3 N 4 in our previous work. [24] In combination with above, P-g-C 3 N 4 can be used as a substrate to disperse easily agglomerated nanomaterials and it can absorb more O 2 , promote the reduction reaction of O 2 , and produce more * O 2…”
Section: Resultsmentioning
confidence: 99%
“…Sub-gap photovoltage features have been detected, attributed to defect energy levels in the middle of the unusual band gap. Wang et al [72] pioneered a methodology utilizing this kind of thermal defects in g-C 3 N 4 to design a novel and efficient Z-scheme heterojunction. Such sub-gaps provide a pathway for charge carrier recombination, to enable the type II heterojunction to transform into a Z-scheme type, with better photocatalytic performance for degradation.…”
Section: Defect Chemistrymentioning
confidence: 99%
“…Sub‐gap photovoltage features have been detected, attributed to defect energy levels in the middle of the unusual band gap. Wang et al . pioneered a methodology utilizing this kind of thermal defects in g‐C 3 N 4 to design a novel and efficient Z‐scheme heterojunction.…”
Section: Photocatalysis Materials and Modifications For Aopsmentioning
confidence: 99%