Defect- and H-Free Stoichiometric Silicon Carbide by Thermal CVD from the Single Source Precursor Trisilacyclohexane

Abstract

Stoichiometric silicon carbide (SiC) thin films were grown using thermal chemical vapor deposition (TCVD) from the single source precursor 1,3,5-trisilacyclohexane (TSCH) on c-Si (100) substrates within an optimized substrate temperature window ranging from 650 to 850 °C. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR) analyses revealed that the as-deposited films consisted of a Si-C matrix with a Si:C ratio of ~1:1. FTIR and photoluminescence (PL) spectrometry studies showed that films deposited ≥ 750 °C were defect- and H-free within the detection limit of the techniques used, while ellipsometry measurements yielded an as-grown SiC average refractive index of ~2.7, consistent with the reference value for the 3C-SiC phase. The exceptional quality of the films appears sufficient to overcome limitations associated with structural defects ranging from failure in high voltage, high temperature electronics to 2-D film growth. TSCH, a liquid at room temperature with good structural stability during transport and handling as well as high vapor pressure (~10 torr at 25 °C), provides a viable single source precursor for the growth of stoichiometric SiC without the need for post-deposition thermal treatment.

Silicon Carbide Thin Film Technologies: Recent Advances in Processing, Properties, and Applications - Part I Thermal and Plasma CVD

“…34 ✓H-free stoichiometric SiC thin films for power electronics. 35 3C-and 4H-SiC mixtures between 1800 and 1900 K; graphite above 1900 K) for MOSFET applications under extreme thermal and other conditions. 37,51 ✓β-SiC thin films for inclusion in high-power and high-temperature electronics.…”

“…25,26,52 ✓H-free stoichiometric SiC thin films for power electronics. 35 ✓SiC multilayered coatings with varying preferred growth orientations as hard coatings for biosensors and biological devices. 53,54 • Ultrafast Data Transmission and Processing:…”

“…• A. E. Kaloyeros et al 35 employed the single source silahydrocarbon precursor (1,3,5-trisilacyclohexane) (TSCH, C 3 H 12 Si 3 ) to deposit H-free, stoichiometric SiC thin films on c-Si (100) substrates at precursor decomposition temperatures in the range 650 to 850 °C using thermal chemical vapor deposition (TCVD). The authors explained that TSCH, a liquid at room temperature, is characterized by its stability during transport and handling, high vapor pressure (∼10 torr at 25 °C), and its chemical bonding configuration wherein C atoms are each bonded to two Si atoms, with each Si atom being additionally bonded to two H atoms.…”

Multiple-Layer Triangular Defects in 4H-SiC Homoepitaxial Films Grown by Chemical Vapor Deposition

“…As a semiconductor material, silicon carbide (SiC) has several advantages over traditional semiconductor materials, including a wide band gap, high thermal conductivity, high critical breakdown field, and high drift velocity of saturated electrons. [1][2][3][4]. Consequently, it has become an important material for high-voltage and high-power devices [5][6][7].…”

Inorganic Semiconductors in Electronic Applications

“…Silicon carbide (SiC) thin films exhibit high potential in power electronics, microelectro-mechanical systems, and quantum and nonlinear photonics. In their contribution, Alain E. Kaloyeros et al fabricate stoichiometric SiC films via thermal chemical vapor deposition using 1,3,5-trisilacyclohexane (TSCH) precursor on c-Si (100) substrates [3]. The 1:1 Si/C ratio of the as-deposited films is proven with X-ray photoelectron spectroscopy and Fourier-transform infrared spectroscopy (FTIR).…”