Defect alignment in grain boundaries as quantum wells

Abstract

Improvements of optical absorption bandwidth in high-density dislocation layers and enhanced solar-cell efficiency through application of ion-implanted defect layers as well as the electro-optical properties of porous silicon, are seen to connect earlier results on grain boundaries with defined parameters and their electro-optic properties with quantum wells (QW). These well-defined grain boundaries are also those which enhance optical sensitivity and critical current (Ic) densities in high-temperature superconductors (HTS) by a flux-pinning effect and are useful for the production of superconducting quantum-interference devices (SQUIDS).

Comment on “Simulation of electron transport across charged grain boundaries” [Appl. Phys. Lett. 69, 1755 (1996)]

“…Rod distances for confined excitons in quantum wells in the higher meV range correspond to the bond distances in these grain boundaries. 18 The crystal orientation of etched rods and its effect on the energy gap was also discussed. 19,20 …”