Deeply-scaled self-aligned-gate GaN DH-HEMTs with ultrahigh cutoff frequency

Shinohara, Kazuhiko; Regan, D.; Corrion, A.; Brown, David F.; Burnham, Shawn D.; Willadsen, P. J.; Alvarado-Rodriguez, Ivan; Cunningham, M.; Butler, C.; Schmitz, A.; Kim, S.; Holden, Brian; Chang, David T.; Lee, V.; Ohoka, Atsushi; Asbeck, P.M.; Micovic, M.

doi:10.1109/iedm.2011.6131582

Cited by 82 publications

(49 citation statements)

References 4 publications

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“…The structure of the miniaturized DH HEMT device simulated in this work is similar to that described in (Shinohara et al 2011) and is shown in Fig. 1.…”

Section: Dh Hemt Device Structurementioning

confidence: 97%

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Full geometric simulation of miniaturized GaN double-heterojunction high electron mobility transistors by a multiscale approach coupling quantum and semi-classical transport

Yang

Xia²,

Li³

et al. 2015

Opt Quant Electron

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In this paper, a multiscale approach coupling semi-classical drift-diffusion (DD) and the quantum mechanical non-equilibrium Green's function (NEGF) formalism is established to simulate the full geometry of miniaturized GaN high electron mobility transistors (HEMTs). DD current flow is corrected locally in the HEMT channel, where electron transport represented by the NEGF is governed by quantum effects. As a result, simulated drain current-drain voltage and drain current-gate voltage curves are easily fitted to experimental data without fitting mobility. The variation of electric behavior predicted by our multiscale approach is in agreement with that expected from 2D electrostatics. This work indicates that it is practical and efficient to include NEGF in a DD solver, which is still the workhorse of the technology computer-aided design industry.

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“…The structure of the miniaturized DH HEMT device simulated in this work is similar to that described in (Shinohara et al 2011) and is shown in Fig. 1.…”

Section: Dh Hemt Device Structurementioning

confidence: 97%

“…In this paper, a miniaturized double-heterojunction (DH) GaN HEMT (Shinohara et al 2011) is simulated using our updated APSYS program. First, the ability of this multiscale approach to depict both properties of DD and QBT is investigated.…”

Section: Introductionmentioning

confidence: 99%

Full geometric simulation of miniaturized GaN double-heterojunction high electron mobility transistors by a multiscale approach coupling quantum and semi-classical transport

Yang

Xia²,

Li³

et al. 2015

Opt Quant Electron

View full text Add to dashboard Cite

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“…As for the effective electron velocity v e , 1:7{1:8 Â 10 7 cm/s are reported for the gate length of 200-250 nm [36,37]. However, in recent aggressively scaled GaN-based HEMTs, reported v e decreases to 1:0{1:5 Â 10 7 cm/s [33,35]. The fitting curves using (4) are also plotted in Fig.…”

Section: Basic Device Structurementioning

confidence: 99%

“…9 shows the f T versus L g reported on GaN-based HEMTs. Aggressive scaling of the gate length and careful managements of the parasitic source/drain resistance by regrown ohmic contact technique achieved f T 's of over 340 GHz [34,35]. As for the effective electron velocity v e , 1:7{1:8 Â 10 7 cm/s are reported for the gate length of 200-250 nm [36,37].…”

Section: Basic Device Structurementioning

confidence: 99%

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InP and GaN high electron mobility transistors for millimeter-wave applications

Suemitsu

2015

IEICE Electron. Express

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This paper reviews two important candidates of millimeter-and sub-millimeter-wave applications, InP-and GaN-based high electron mobility transistors (HEMTs). For both devices, the gate length scaling has already well developed to the dimension of 15-30 nm. For further improvement in the cutoff frequency, an importance of the careful managements of parasitic components in the devices is discussed. Successful reduction of the parasitic gate delay time will enable us to achieve a cutoff frequency of over 1 THz in InP-based HEMTs and that of over 500 GHz in GaN-based HEMTs.

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Ultrascaled 10 nm T‐gate E‐mode InAlN / AlN HEMT with polarized doped buffer for high power microwave applications

Sharma

Chaujar

2022

Int J RF Mic Comp-Aid Eng

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The DC and RF performance of ultra-scaled 10 nm E mode InAlN/AlN HEMT with polarized doped buffer has been investigated. The proposed device has the feature of polarized doped buffer, heavily doped source/drain region, and recessed T-gate structure. The polarization-induced doping in the buffer layer bent the conduction band upwardly convex, which enhanced the 2DEG confinement, reduced the buffer leakage current, and significantly uplifted the breakdown voltage (33 V), which is 5 times higher than the conventional InAlN/AlN GaN buffer HEMT (8 V). The short channel effect was further reduced by the recessed gate engineering (high on/off ratio 10 9 , subthreshold swing 78 mV/dec, and DIBL 100 mV/V), and smaller 10 nm foot length of Tgate reduced the parasitic capacitance, which uplifts the RF parameters of the proposed device. The proposed device exhibits a high current density of 2.8 A/ mm, transconductance 1.55 S/mm, cutoff frequency f T (583 GHz), and maximum oscillation frequency f max (840 GHz). At room temperature, the calculated carrier density and mobility are 2.8 Â 10 13 cm À2 and 1250 cm 2 /Vs. The large Jhonson figure of merit (f T . V BR ) 19.23 THz and (f T . f max ) 1/2 699 GHz shows the potential of the proposed device for high-power millimeter-wave applications.

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Deeply-scaled self-aligned-gate GaN DH-HEMTs with ultrahigh cutoff frequency

Cited by 82 publications

References 4 publications

Full geometric simulation of miniaturized GaN double-heterojunction high electron mobility transistors by a multiscale approach coupling quantum and semi-classical transport

Full geometric simulation of miniaturized GaN double-heterojunction high electron mobility transistors by a multiscale approach coupling quantum and semi-classical transport

InP and GaN high electron mobility transistors for millimeter-wave applications

Ultrascaled 10 nm T‐gate E‐mode InAlN / AlN HEMT with polarized doped buffer for high power microwave applications

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