2015
DOI: 10.1364/boe.7.000158
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Deep-UV biological imaging by lanthanide ion molecular protection

Abstract: Deep-UV (DUV) light is a sensitive probe for biological molecules such as nucleobases and aromatic amino acids due to specific absorption. However, the use of DUV light for imaging is limited because DUV can destroy or denature target molecules in a sample. Here we show that trivalent ions in the lanthanide group can suppress molecular photodegradation under DUV exposure, enabling a high signal-to-noise ratio and repetitive DUV imaging of nucleobases in cells. Underlying mechanisms of the photodegradation supp… Show more

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Cited by 30 publications
(22 citation statements)
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References 48 publications
(88 reference statements)
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“…For our Gr/Si UV photodetector, J ph and J dark are 12 μA cm −2 and 0.1 nA cm −2 (under vacuum) at zero-bias (selfpowered) mode, respectively, leading to R I = 0.12 A W −1 at 365 nm UV light. The responsivity and dark current density are comparable to the-state-of-art compound semiconductor Schottky photodetectors such as GaN (R I~0 .10 A W −1 , J dark~5 00 nA cm −2 ) and SiC (R I~0 .03 A W −1 , J dark~0 .25 nA cm −2 ) (see refs [1][2][3][4][5][6][7][8]. The dark current density of our Gr/Si photodetector is smaller than the typical metal-semiconductor Schottky photodetectors owing to the finite density of states of 2D materials and smaller electronic injection ratio from silicon to graphene, as compared with the traditional metal-semiconductor contact.…”
Section: Resultsmentioning
confidence: 77%
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“…For our Gr/Si UV photodetector, J ph and J dark are 12 μA cm −2 and 0.1 nA cm −2 (under vacuum) at zero-bias (selfpowered) mode, respectively, leading to R I = 0.12 A W −1 at 365 nm UV light. The responsivity and dark current density are comparable to the-state-of-art compound semiconductor Schottky photodetectors such as GaN (R I~0 .10 A W −1 , J dark~5 00 nA cm −2 ) and SiC (R I~0 .03 A W −1 , J dark~0 .25 nA cm −2 ) (see refs [1][2][3][4][5][6][7][8]. The dark current density of our Gr/Si photodetector is smaller than the typical metal-semiconductor Schottky photodetectors owing to the finite density of states of 2D materials and smaller electronic injection ratio from silicon to graphene, as compared with the traditional metal-semiconductor contact.…”
Section: Resultsmentioning
confidence: 77%
“…Ultraviolet (UV) photodetectors could find a wide range of applications, [1][2][3][4][5][6][7][8] such as environmental monitoring, 3 biological and chemical analysis, 4 flame detection, 5 astronomical studies, 8 internet-of-things sensors, 9 and missile detection. 10 Recently, wide band-gap (WBG) semiconductors (SiC, 11 GaN, 12 ZnO, 13 TiO X , 14 etc.)…”
Section: Introductionmentioning
confidence: 99%
“…Recently, Kumamoto et al reported a brand new method for suppressing molecular degradation in cells under DUV irradiation . They used lanthanide although it is in general known as emissive materials .…”
Section: Photodamagementioning
confidence: 99%
“…They discussed mechanisms of the molecular protection effects of lanthanide ions . A lanthanide ion, such as Tb 3+ and Eu 3+ , accepts energy from a biomolecule excited at DUV light .…”
Section: Photodamagementioning
confidence: 99%
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