Deep Trench Isolation for Crosstalk Suppression in Active Pixel Sensors with 1.7 µm Pixel Pitch

Park, Byung Jun; Jung, Jongwan; Moon, Cheol; Hwang, Sung Ho; Lee, Yong Woo; Kim, Dae Woong; Paik, Kee Hyun; Yoo, Jung-Keun; Lee, Duck‐Hyung; Kim, Kinam

doi:10.1143/jjap.46.2454

Cited by 37 publications

(19 citation statements)

References 4 publications

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“…A major challenge is the suppression of all parasitic charge exchange between neighboring pixels (crosstalk), which can lead to loss in image quality. Several pixel isolation architectures have been proposed for suppressing crosstalk, including the deep trench structure [4], in which the Si-SiO 2 interface is used as a barrier against electron diffusion. In the study of Tournier et al [5], deep trench technology for CMOS image sensors was developed for 1.4-µm pixel front-side illumination technology.…”

Section: Introductionmentioning

confidence: 99%

Deep Trench Isolation and Inverted Pyramid Array Structures Used to Enhance Optical Efficiency of Photodiode in CMOS Image Sensor via Simulations

Han

Chiou

Lin

2020

Sensors

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The photodiode in the backside-illuminated CMOS sensor is modeled to analyze the optical performances in a range of wavelengths (300–1100 nm). The effects of changing in the deep trench isolation depth (DTI) and pitch size (d) of the inverted pyramid array (IPA) on the peak value (OEmax.) of optical efficiency (OE) and its wavelength region are identified first. Then, the growth ratio (GR) is defined for the OE change in these wavelength ranges to highlight the effectiveness of various DTI and d combinations on the OEs and evaluate the OE difference between the pixel arrays with and without the DTI + IPA structures. Increasing DTI can bring in monotonous OEmax. increases in the entire wavelength region. For a fixed DTI, the maximum OEmax. is formed as the flat plane (d = 0 nm) is chosen for the top surface of Si photodiode in the RGB pixels operating at the visible light wavelengths; whereas different nonzero value is needed to obtain the maximum OEmax. for the RGB pixels operating in the near-infrared (NIR) region. The optimum choice in d for each color pixel and DTI depth can elevate the maximum GR value in the NIR region up to 82.2%.

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Section: Introductionmentioning

confidence: 99%

Deep Trench Isolation and Inverted Pyramid Array Structures Used to Enhance Optical Efficiency of Photodiode in CMOS Image Sensor via Simulations

Han

Chiou

Lin

2020

Sensors

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“…In the pixel structure, including shifted microlens [8] and zero gap microlens [9], plasmonic color filter [10,11,12,13] and lensed color filter [14], optimized light guidance structure [15,16]. As for the process development, deep p-well around photodiode [17], deep trench isolation (DTI) [18] including frontside-illumination DTI [19], backside-illumination [20] and capacitor DTI [21], air-gap guard ring [22,23,24,25], anti-reflection film coating [26] and buried shield metal [27] are all applied to optimize the crosstalk behavior respectively. PMOS structure [28] also make sense due to its limit in diffusion.…”

Section: Introductionmentioning

confidence: 99%

A novel method to test and optimize the periphery crosstalk in CMOS image sensor

Liu

Zhang

Shen

2020

IEICE Electron. Express

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For the purpose of reducing the peripheral crosstalk occur in the edge pixel, we illustrated a method to test and quantify the intensity of this crosstalk, and setup a model combining the opposite incident light and color construction. With the aid of the method and model, we conducted many experiments to analyze and compare the improvement measures, finding that the increase of pixel edge to package edge distance, sealing glass thinning and black photoresist coating around edge are all effective to reduce the peripheral crosstalk. Moreover, considering the effect and cost, the sealing glass thinning is the relatively best measure.

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“…These sensors require technological advances in, for example, high-resolution imaging and many functions. [1][2][3][4][5][6][7] Therefore, technical issues of CMOS image sensors, including dark current, image lag and random telegraph signal (RTS) noise, should be solved to achieve high electrical device performance. [1][2][3][4][5][6][7][8][9][10][11][12][13] The cause of dark current is the generation-recombination centers induced by deep energy level defects in a silicon bandgap owing to metallic impurities generated during various semiconductor fabrication processes.…”

Section: Introductionmentioning

confidence: 99%

Molecular and Atomic Hydrogen Diffusion Behavior by Reaction Kinetic Analysis in Projection Range of Hydrocarbon Molecular Ion for CMOS Image Sensors

Okuyama

Onaka‐Masada

Suzuki

et al. 2019

Physica Status Solidi (a)

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In this study, two types of hydrogen diffusion behavior in the projection range of a hydrocarbon molecular ion after high-temperature heat treatment for the passivation of interface state defects at SiO 2 /Si interface of the CMOS image sensor is presented. The hydrogen peak concentration in the hydrocarbon ion projection range is observed by secondary ion mass spectrometry analysis after silicon epitaxial growth and the subsequent high-temperature heat treatment. Moreover, the hydrogen peak concentration strongly depends on heat treatment time after epitaxial growth and the subsequent heat treatment. Two dissociation activation energies by reaction kinetic analysis using the results of the time dependence of hydrogen diffusion behavior are also determined. Assuming two dissociation reactions, the activation energy from the projection range of a hydrocarbon molecular ion is derived. The results of reaction kinetic analysis show that the dissociation activation energies are 0.79 eV for molecular hydrogen and 0.42 eV for atomic hydrogen. The dissociation activation energy of 0.79 eV indicates molecular hydrogen diffusion activation energy, whereas that of 0.42 eV indicates atomic hydrogen diffusion from the projection range of a hydrocarbon molecular ion. Therefore, it is believed that the molecular and atomic hydrogen diffusion behavior of the hydrocarbon molecular ion implanted silicon epitaxial wafers can contribute to the effective reduction in the density of interface state defects at the SiO 2 /Si interface.

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Deep Trench Isolation for Crosstalk Suppression in Active Pixel Sensors with 1.7 µm Pixel Pitch

Cited by 37 publications

References 4 publications

Deep Trench Isolation and Inverted Pyramid Array Structures Used to Enhance Optical Efficiency of Photodiode in CMOS Image Sensor via Simulations

Deep Trench Isolation and Inverted Pyramid Array Structures Used to Enhance Optical Efficiency of Photodiode in CMOS Image Sensor via Simulations

A novel method to test and optimize the periphery crosstalk in CMOS image sensor

Molecular and Atomic Hydrogen Diffusion Behavior by Reaction Kinetic Analysis in Projection Range of Hydrocarbon Molecular Ion for CMOS Image Sensors

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