Deep states associated with oxidation induced stacking faults in RTA p-type silicon before and after copper diffusion

Saritaş, Müzeyyen; Peaker, А. R.

doi:10.1016/0038-1101(95)98671-o

Cited by 12 publications

(3 citation statements)

References 27 publications

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“…14,30 However, this reaction does not explain the aforementioned decrease of Cu þ i concentration during light-soaking. Moreover, DLTS studies on intentionally Cu contaminated material revealed the existence of two acceptor energy states located at E v þ 0:41…0:45 eV [31][32][33][34] and E c À 0:16 eV 24 and a donor energy level at E v þ 0:22 eV, 24,35 which were later associated with the substitutional copper defect. 35 While the energy state at E c À 0:16 eV seems to be in good agreement with LS results reported in this study, no strong evidence of the other energy states can be found.…”

Section: Comparison With Literature Data and Discussionmentioning

confidence: 99%

Recombination activity of light-activated copper defects in p-type silicon studied by injection- and temperature-dependent lifetime spectroscopy

Inglese

Lindroos

Vahlman

et al. 2016

Journal of Applied Physics

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The presence of copper contamination is known to cause strong light-induced degradation (Cu-LID) in silicon. In this paper, we parametrize the recombination activity of light-activated copper defects in terms of Shockley—Read—Hall recombination statistics through injection- and temperature dependent lifetime spectroscopy (TDLS) performed on deliberately contaminated float zone silicon wafers. We obtain an accurate fit of the experimental data via two non-interacting energy levels, i.e., a deep recombination center featuring an energy level at Ec−Et=0.48−0.62 eV with a moderate donor-like capture asymmetry (k=1.7−2.6) and an additional shallow energy state located at Ec−Et=0.1−0.2 eV, which mostly affects the carrier lifetime only at high-injection conditions. Besides confirming these defect parameters, TDLS measurements also indicate a power-law temperature dependence of the capture cross sections associated with the deep energy state. Eventually, we compare these results with the available literature data, and we find that the formation of copper precipitates is the probable root cause behind Cu-LID.

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Section: Comparison With Literature Data and Discussionmentioning

confidence: 99%

Recombination activity of light-activated copper defects in p-type silicon studied by injection- and temperature-dependent lifetime spectroscopy

Inglese

Lindroos

Vahlman

et al. 2016

Journal of Applied Physics

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“…Subsequent measurements on the Frank partial dislocations surrounding stacking faults (which could be created in ultra clean conditions) showed that the electrical properties and recombination activity depended very strongly on the level of decoration. This is the case in both n‐type 39 and p‐type 40. The electrically active defects, determined by DLTS, were found to increase in concentration and move deeper in the gap with an increasing concentration of metal concentration, so increasing the recombination activity, until micro‐precipitates started to be observed on the dislocation by TEM.…”

Section: Defect Complexes and Dislocationsmentioning

confidence: 86%

Recombination via point defects and their complexes in solar silicon

Peaker

Markevich

Hamilton

et al. 2012

Physica Status Solidi (a)

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Electronic grade Czochralski and float zone silicon in the as grown state have a very low concentration of recombination generation centers (typically <1010 cm−3). Consequently, in integrated circuit technologies using such material, electrically active inadvertent impurities and structural defects are rarely detectable. The quest for cheap photovoltaic cells has led to the use of less pure silicon, multi‐crystalline material, and low cost processing for solar applications. Cells made in this way have significant extrinsic recombination mechanisms. In this paper we review recombination involving defects and impurities in single crystal and in multi‐crystalline solar silicon. Our main techniques for this work are recombination lifetime mapping measurements using microwave detected photoconductivity decay and variants of deep level transient spectroscopy (DLTS). In particular, we use Laplace DLTS to distinguish between isolated point defects, small precipitate complexes and decorated extended defects. We compare the behavior of some common metallic contaminants in solar silicon in relation to their effect on carrier lifetime and cell efficiency. Finally, we consider the role of hydrogen passivation in relation to transition metal contaminants, grain boundaries and dislocations. We conclude that recombination via point defects can be significant but in most multi‐crystalline material the dominant recombination path is via decorated dislocation clusters within grains with little contribution to the overall recombination from grain boundaries.

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“…This implies that the OISF have a much greater radiative recombination activity associated with them than the SFT/SFPs, and from the previous arguments, are therefore also more electrically active. Oxidation-induced stacking faults are known to be electrically active in p-type silicon [23], and therefore the sacrificial oxidation process has introduced generation-recombination centres into the volume of material where devices will be fabricated in these substrates.…”

Section: Pl Measurements On P-type Simoxmentioning

confidence: 99%

Electrical and optical characterization of extended defects in SIMOX structures

Qian¹,

Evans²,

Giles

et al. 1996

Semicond. Sci. Technol.

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A novel electron beam induced current (EBIC) technique, which utilizes two adjacent front contacts (one Schottky and one Ohmic), has been developed to characterize electrically active extended defects in the silicon overlayer of SIMOX structures. The results have been compared with photoluminescence measurements on the same samples. EBIC measurements on n-type SIMOX layers show that dislocations and precipitates present in the overlayer act as recombination centres. PL spectra exhibit dislocation-related emission, the intensity of which correlates with the change in density of extended defects measured by EBIC as the experiments are scanned across the wafer. P-type SIMOX material is found to contain stacking fault tetrahedra and pyramidals at the upper silicon-oxide interface and threading dislocations extending across the Si overlayer, but the PL emission of these defects is negligible. Thinning the overlayer by a sacrificial oxidation process creates oxidation-induced stacking faults in the overlayer, which give rise to strong dislocation-related PL emission. It is demonstrated that electrically active extended defects in the silicon overlayers of SIMOX structures are also optically active, and that PL measurements can provide a valuable insight into the electrical activity of the thin overlayers in these structures.

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Deep states associated with oxidation induced stacking faults in RTA p-type silicon before and after copper diffusion

Cited by 12 publications

References 27 publications

Recombination activity of light-activated copper defects in p-type silicon studied by injection- and temperature-dependent lifetime spectroscopy

Recombination activity of light-activated copper defects in p-type silicon studied by injection- and temperature-dependent lifetime spectroscopy

Recombination via point defects and their complexes in solar silicon

Electrical and optical characterization of extended defects in SIMOX structures

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