Deep radiative levels in InP

Temkin, H.; Dutt, B. V.; Bonner, W. A.; Keramidas, V. G.

doi:10.1063/1.330162

Cited by 80 publications

(31 citation statements)

References 25 publications

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“…PL spectra of all these samples exhibit additional bands C and D located at 1252 nm (0.99 eV) and 1652 nm (0.75 eV), respectively. Similar bands were observed [17] on LPE layers. Band C was also observed on melt grown and liquid encapsulated Czochralski bulks.…”

Section: Resultssupporting

confidence: 85%

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Optical properties of InP layers prepared with the addition of Ce, Tm and Lu in the growth melt

Zavadil¹,

Procházková²,

Gladkov³

2005

Cryst. Res. Technol.

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InP single crystals were grown by liquid phase epitaxy on semi-insulating InP:Fe and n-type InP:Sn substrates with cerium, thulium and lutetium additions to the growth melt. Grown layers were examined by low-temperature photoluminescence spectroscopy and C-V measurements. Layers prepared with the addition of Ce and Tm exhibit the change of electrical conductivity from n to p, while those grown with Lu admixture remain n-type. Ce has been found to be incorporated into the InP lattice and sharp luminescence arising from 2 F 7/2 → 2 F 5/2 inner shell transitions of Ce 3+ at 3600 nm was detected. The highest purifying effect due to RE addition has been found for Tm admixture, where the impurity concentration was decreased by three orders of magnitude and fine spectral features were revealed by photoluminescence spectroscopy. The addition of Tm into the growth melt enables to prepare thick and pure InP layers of p-type conductivity -a material promising in the context of semiconductor radiation detectors.

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Section: Resultssupporting

confidence: 85%

“…Band C was also observed on melt grown and liquid encapsulated Czochralski bulks. Using high temperature annealing under different phosphorus pressure the band C was found to be connected to phosphorus vacancy (V P ) [17]. The origin of band D at 0.75 eV is still unknown.…”

Section: Resultsmentioning

confidence: 98%

Optical properties of InP layers prepared with the addition of Ce, Tm and Lu in the growth melt

Zavadil¹,

Procházková²,

Gladkov³

2005

Cryst. Res. Technol.

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“…The broad band at 1.21 eV is observed only on annealed SI samples and it is not observed on the as-grown and on the annealed n-type conducting InP. Similar level was observed on annealed melt grown InP samples [8]. Cd diffusion performed on those samples led to complete suppression of 1.21 eV band which supports the acceptor-like nature of the band.…”

supporting

confidence: 80%

“…Similar but somewhat different dependence was reported in Ref. [8], where a steady increase from 40 to 120 K has been observed with abrupt decrease above 120 K. The dependence of integrated intensity on inverse temperature indicates that phonon assisted transitions over a barrier are involved in the luminescence mechanism. The vacancy-impurity complexes and radiative deep level transitions in GaAs and InP have been discussed in terms of configuration coordinate models [9].…”

supporting

confidence: 71%

High temperature annealing of undoped and Mn doped InP: photoluminescence and Hall measurements

Zavadil

Žďánský

Pekárek

et al. 2003

phys. stat. sol. (c)

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PACS 72.80. Ey, 78.55.Cr Crystals of intentionally undoped n-type InP and Mn doped p-type InP were grown by the Czochralski technique. The as-grown crystals and those processed by high temperature long time annealing were studied by low temperature photoluminescence and temperature dependent Hall measurements. A new broad band was observed in those undoped InP samples which were converted to semi-insulating state by annealing. Hall measurements on those samples show that the semi-insulating state is caused by deep level defects of the same energy as the binding energy of the Fe impurity. Another new photoluminescence band appeared in the annealed InP doped with Mn, while the concentration of Mn did not change according to both photoluminescence and Hall measurements.Introduction Semi-insulating (SI) InP is a very important material for high-frequency devices and for applications in optoelectronics. Up till now, SI InP could only be obtained via doping by transition metal (TM) impurities such as Fe, Co, Cr and Mn [1-3] which act as deep acceptors and by co-doping by Ti and Zn, which act as a deep donor and a shallow acceptor, respectively. However, conventional TMdoped InP has various disadvantages. It is preferable to avoid TM doping since it is possible that these impurities may deteriorate device performance [4]. Undoped SI InP, which can be realised by hightemperature annealing, is a candidate for replacing conventional TM-doped InP by a material of better quality. There are several reports in the literature on the realisation of nominally undoped SI InP [5 -7] with promising results but it is not clear if deep defects were created as in the case of undoped SI GaAs. To understand the mechanism of the conversion (due to annealing), we have measured samples of undoped InP after annealing, by temperature dependent Hall measurements and by low-temperature photoluminescence (PL). Further, we have measured the effect of annealing on p-type Mn doped InP.

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“…There have been only a few reports on band D [1,[3][4][5]. Most of these concluded that band D is due to complexes involving Vp and impurities (for example, Cu~,-Vv [4]).…”

mentioning

confidence: 99%

Deep-level photoluminescence studies of undoped and tin-doped (LEC) InP

Chan

et al. 1994

J Mater Sci: Mater Electron

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The effects of tin doping on the deep-level photoluminescence (PL) spectra of (LEC) InP were studied. Specifically, the effect of rapid thermal annealing (RTA) on the deep emission bands labelled as band A (1.13 eV), band B (1.06 eV), band C (1.20 eV) and band D (0.97 eV) were investigated. Band A appeared in both undoped and doped samples, but it disappeared after RTA for all the samples. It is suggested that band A is due to the formation of a complex involving Vin with residual impurities. The disappearance of band A after RTA is concomitant with the appearance of bands B, C and D. The existence of band B is attributed to the complex formation of Vp with residual impurities. Band C was observed after the annealing process both in undoped and lightly-tin-doped samples and is believed to be due to the formation of Vp single point defects. Band D was only observed in heavily doped samples and it is believed to be the effect of Inp antisite defects.

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Deep radiative levels in InP

Cited by 80 publications

References 25 publications

Optical properties of InP layers prepared with the addition of Ce, Tm and Lu in the growth melt

Optical properties of InP layers prepared with the addition of Ce, Tm and Lu in the growth melt

High temperature annealing of undoped and Mn doped InP: photoluminescence and Hall measurements

Deep-level photoluminescence studies of undoped and tin-doped (LEC) InP

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