Deep level traps and the temperature behavior of the photoluminescence in GaAs/AlGaAs multiple quantum wells grown on off-axis and on-axis substrates

Afalla, Jessica; Alas, Kaye Ann de las; Balgos, Maria Herminia; Bailon-Somintac, Michelle; Estacio, Elmer; Somintac, Armando

doi:10.1016/j.jlumin.2013.05.034

Cited by 3 publications

(1 citation statement)

References 19 publications

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“…Material quality issues such as the presence of traps in the fabricated structure could explain the poorer performance observed. The presence of traps in AlGaAs devices have been previously reported by other researchers35363738. Traps can cause polarisation effects that may contribute to the device function39: the charge generated by the X-ray radiation can be trapped, building up space charges in the detector, which collapses the electric field and results in device degradation.…”

Section: Methodssupporting

confidence: 57%

AlGaAs 55Fe X-ray radioisotope microbattery

Butera

Whitaker

Lioliou

et al. 2016

Sci Rep

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This paper describes the performance of a fabricated prototype Al0.2Ga0.8As 55Fe radioisotope microbattery photovoltaic cells over the temperature range −20 °C to 50 °C. Two 400 μm diameter p+-i-n+ (3 μm i-layer) Al0.2Ga0.8As mesa photodiodes were used as conversion devices in a novel X-ray microbattery prototype. The changes of the key microbattery parameters were analysed in response to temperature: the open circuit voltage, the maximum output power and the internal conversion efficiency decreased when the temperature was increased. At −20 °C, an open circuit voltage and a maximum output power of 0.2 V and 0.04 pW, respectively, were measured per photodiode. The best internal conversion efficiency achieved for the fabricated prototype was only 0.95% at −20 °C.

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Section: Methodssupporting

confidence: 57%

AlGaAs 55Fe X-ray radioisotope microbattery

Butera

Whitaker

Lioliou

et al. 2016

Sci Rep

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Temperature dependence of THz emission and junction electric field of GaAs–AlGaAs modulation-doped heterostructures with different i-AlGaAs spacer layer thicknesses

Bardolaza

Vasquez

Bacaoco

et al. 2018

J Mater Sci: Mater Electron

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Defect-related temperature dependence of THz emission from GaAs/AlGaAs MQWs grown on off- and on-axis substrates

Afalla¹,

Reyes

Mag-usara³

et al. 2017

AIP Advances

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Simultaneous molecular beam epitaxial growth of GaAs/AlGaAs multiple quantum wells on two different substrates (one on GaAs (100) and another on a GaAs substrate misoriented by 4° in the (111) direction) resulted in samples of similar structure, but having different defect profiles. The on-axis sample had a higher defect density and more types of electron traps than the off-axis counterpart. Temperature-dependent terahertz (THz) emission and temperature-dependent photoluminescence were measured; in both cases, an intensity quenching was observed between 75 K – 250 K for the on-axis sample, but not in the off-axis sample. We attribute the THz emission quenching to the electron traps present in the sample, which decreases the photocarriers participating in setting up the surface field.

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Deep level traps and the temperature behavior of the photoluminescence in GaAs/AlGaAs multiple quantum wells grown on off-axis and on-axis substrates

Cited by 3 publications

References 19 publications

AlGaAs 55Fe X-ray radioisotope microbattery

AlGaAs 55Fe X-ray radioisotope microbattery

Temperature dependence of THz emission and junction electric field of GaAs–AlGaAs modulation-doped heterostructures with different i-AlGaAs spacer layer thicknesses

Defect-related temperature dependence of THz emission from GaAs/AlGaAs MQWs grown on off- and on-axis substrates

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