Deep level transient spectroscopy study of heavy ion implantation induced defects in silicon

Lew, C. T.-K.; Johnson, Brett C.; McCallum, Jeffrey C.

doi:10.1063/1.5047534

Cited by 3 publications

(2 citation statements)

References 44 publications

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“…This technique has been widely employed in the development of semiconductor devices and structures [16][17][18][19]. However, ion implantation can introduce complex defects that significantly impact the electrical and optical properties of the targeted device, because they can act as recombination centers, leading to substantial changes in the charge carrier profiles of the material [20][21][22]. Understanding the complex nature of intrinsic and impurity-related defects is crucial for comprehending and reconciling the electrical behavior of ZnO-based devices.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and Analysis of Ion-Engineered ZnO Device Structures for Optoelectronic Applications

Younus,

Shuja,

Ali

2023

IEEE Photonics J.

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Abstract-ZnO-based devices are highly promising for applications involving light-matter interaction. This work explores the impact of light-matter interaction on ion-induced ZnO structures and their respective energy band profiles. Incorporation of various ions, (Au + , B + , Cu + , P + ) into the ZnO lattice, deposited via magnetron sputtering on an n-type Si substrate was investigated in detail. To assess the impact of these ions on the ZnO surface, monte-carlo simulations at low energies were performed and optimal ion dose and energy conditions were determined. The resulting post-fabrication devices underwent comprehensive structural, morphological, optical, and electrical diagnostics. X-ray diffraction (XRD) analysis confirmed the wellmaintained crystal structure of the ZnO lattice along the <100> direction for all implant sequences. Notably, the gold (Au + ) implant exhibited the highest light extinction into the ZnO matrix, as indicated by the extinction coefficient and refractive index data. This observation suggested that Au + implantation could effectively generate electron-hole pairs. The photovoltage and dark/light current measurements provided further evidence of enhanced light-matter interactions and responsivity in the Au + -implanted devices owing to light-induced currents. Furthermore, the energy bands of all implant cases were profiled by Charge Deep Level Transient Spectroscopy (Q-DLTS) measurements by evaluating discrete energy states within the ZnO lattice.

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Section: Introductionmentioning

confidence: 99%

Fabrication and Analysis of Ion-Engineered ZnO Device Structures for Optoelectronic Applications

Younus,

Shuja,

Ali

2023

IEEE Photonics J.

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“…Lv et al have reported that O-deficient defects in ZnO are the main causes for the radiation hardness of ZnO. However, implanted ion-induced complex defects acting as recombination or trapping centers may not only considerably degrade the electrical and optical properties but also control the charge carrier profiles. − Thus, the advances of ZnO-based devices have been delayed by the complexity in understanding and trading-off between the electrical behavior of intrinsic and impurity-related defects. This remains a major confrontation for the ZnO-based devices and renders the area unexplored.…”

Section: Introductionmentioning

confidence: 99%

Efficacy of Ion Implantation in Zinc Oxide for Optoelectronic Applications: A Review

Das

Basak

2021

ACS Appl. Electron. Mater.

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Unlike the majority of the silicon-based electronic devices, optoelectronic devices are predominantly made using III–V and II–VI semiconductor compounds and their alloys because of their direct bandgap. Among these, zinc oxide (ZnO) is a multifunctional wide bandgap II–VI semiconductor material that has distinctive properties, such as large excitonic binding energy, high-sensitivity, nontoxicity, and good compatibility, which favors it to be considered for various optoelectronic applications including photoelectrochemical (PEC) water splitting, light-emitting diodes (LEDs), photovoltaics, and photodetectors. Though the research concentrated on ZnO started many decades ago, the renewed interest is rekindled only with the availability of high-quality single-crystal substrates, easy growth techniques of various nanostructures, and reports on p-type ZnO. Therefore, ZnO is being treated as a concentrated research focus during the last two decades by researchers encompassing a vast field starting from luminescent materials, energy storage and conversion, to biomedical sensors, and so on. Ion beam irradiation is a fruitful approach to modify the properties of semiconducting oxides by introducing not only impurities but also defects, strains, structural transitions, and others. The necessity of a timely in-depth and critical review of the progress on ion implantation in ZnO is the origin of this Review, which focuses on the recent implantation efforts in nanostructured ZnO thin films as well as single crystals. In the beginning, with an introduction to the general principles of ion implantation, this Review presents interactions and distribution of implantation-induced defects in ZnO. Next, comprehensive analyses on the influence of ion implantation on the optical, electrical properties, and optoelectronic applications including PEC water splitting and LEDs have been revealed. Most importantly, in each section from a “state-of-the-art” of the domain, some critical connections have been provided between the results of the theoretical simulations of the implanted ion-induced defects and the reported data, which in particular would be able to offer significant insights for both theoretical and experimental research community working with the oxide semiconductors. At the end, a summary with future directions for utilizing ion implantation for achieving ZnO thin-film-based high-performance devices has been presented. By including a sufficient breadth and depth of literature coverage in this Review, we believe that it would also tend to reveal the inconsistencies in the extant body of research.

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Process-induced defects in Au-hyperdoped Si photodiodes

Lim

Lew

Chow

et al. 2019

Journal of Applied Physics

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Hyperdoped Si formed by implantation followed by pulsed laser melting is a promising material for enhanced near-infrared photodetection. To realize the full potential of this material, it is crucial to understand the nature of defects arising from the fabrication process and how these may impact device operation. Here, we identify through deep level transient spectroscopy the presence of a range of defects in the substrate depletion layer that arise from interactions between high dose ion implantation and pulsed laser melting, and investigate their annealing behavior up to 650°C. In particular, the detection of a vacancy complex E1(0.35) with densities as high as 1014cm−3 indicates that optical transitions between this level and the valence band may compete with the Au donor center, and hence could potentially contribute to the photocurrent in hyperdoped photodiodes.

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Deep level transient spectroscopy study of heavy ion implantation induced defects in silicon

Cited by 3 publications

References 44 publications

Fabrication and Analysis of Ion-Engineered ZnO Device Structures for Optoelectronic Applications

Fabrication and Analysis of Ion-Engineered ZnO Device Structures for Optoelectronic Applications

Efficacy of Ion Implantation in Zinc Oxide for Optoelectronic Applications: A Review

Process-induced defects in Au-hyperdoped Si photodiodes

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