Deep-level transient spectroscopy of AlGaAs and CuInSe2

Hanak, Thomas R.; Bakry, Assem; Dunlavy, D. J.; Abou‐Elfotouh, F.; Ahrenkiel, R. K.; Timmons, Michael B.

doi:10.1016/0379-6787(89)90043-4

Cited by 18 publications

(2 citation statements)

References 5 publications

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“…This complex is found to have a level consistent with the As Ga -O As complex. We note that energy levels in the 0.45-0.49 eV range have been observed via DLTS 59,66,67 and temperature-dependent Hall measurements 68 of similar-stoichiometric AlGaAs samples known to contain oxygen impurities, supporting this possibility.…”

Section: Discussionsupporting

confidence: 60%

Low-frequency noise and defects in AlGaAs/InGaAs/GaAs pseudomorphic high-electron mobility transistors

Luo,

O'Hara,

et al. 2024

Journal of Applied Physics

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Current–voltage characteristics and low-frequency (LF) noise of industrial-quality AlGaAs/InGaAs/GaAs pseudomorphic high-electron-mobility transistors are evaluated as a function of bias stress and temperature. A small positive shift of threshold voltage Vth and negligible degradation in peak transconductance GM are observed under ON-state bias conditions at elevated temperatures. The Vth measurements suggest activation of an acceptor-like defect or impurity center. The GM measurements demonstrate that newly activated defects are not located close enough to the two-dimensional electron gas to scatter carriers strongly. First-principles calculations and comparisons with previous work suggest that OAs impurity centers, other oxygen-related defects, isolated AsGa antisites, and dopant-based DX centers may contribute significantly to low-frequency (LF) noise in as-processed devices. LF noise is relatively unaffected by voltage stress at elevated temperatures, consistent with the small changes in Vth and peak GM.

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Section: Discussionsupporting

confidence: 60%

Low-frequency noise and defects in AlGaAs/InGaAs/GaAs pseudomorphic high-electron mobility transistors

Luo,

O'Hara,

et al. 2024

Journal of Applied Physics

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“…However, it is still an open question how the intrinsic defect equilibrium can be monitored in order to produce material with desired electrical or optical properties in a reproducible manner. Indeed, it follows from measurements of the electrical characteristics (NEUMANN, TOMLINSON), photoconductivity (SLIFKIN et al 1991 a, b), photoluminescence (ABOU-ELFOTOUH et al 1991 a, b;DAGAN et al;TANDA et al), deep level transient spectra (ABOU- ELFOTOUH et al 1991 a, b;HANAK et al; LI, SHIH; MOLLER, RODAK) and subgap optical absorption spectra using photoacoustic spectroscopy (ZEGADI et al) that several different donor and acceptor defects are always simultaneously present in the compound. Moreover, it has been found that the relative concentrations of the various defects depend not only on the specific deviation from ideal stoichiometry but also on the thermal hstory of the samples SLIFKIN et al 1991a) which further complicates the situation.…”

Section: Introductionmentioning

confidence: 99%

Electrical Properties of CuInSe₂ Single Crystals Implanted with Xenon

Tomlinson

Yakushev

Neumann

1993

Cryst. Res. Technol.

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Both p-type and n-type CuInSe, single crystals were implanted with 40 keV 13'Xe+ ions up to doses of 5 . 1OI6 cm-'. Implanted layers on p-type substrates showed an initial increase of the resistivity followed by a continuous decrease of the resistivity at higher doses. Implanted layers on n-type substrates gave also an increase of the resistivity at lower doses, but at higher doses a conductivity type conversion from n-type to p-type took place, followed by a decrease of the resistivity. To explain the experimental results it is supposed that the increase of the resistivity is mainly due to charge carrier scattering at extended defects while the decrease of the resistivity at high doses is due to the predominant creation of intrinsic acceptor states during implantation.Sowohl p-als auch n-leitende CuInSe,-Einkristalle wurden mit 40 keV 13'Xe+-Ionen bis zu einer Dosis von 5 . 10l6 an-' implantiert. Implantierte Schichten auf p-leitenden Substraten zeigten zunachst einen Anstieg des spezifischen Widerstands, dem bei hoheren Dosen ein stetiger Abfall des spezifischen Widerstands folgte. Implantierte Schichten auf n-leitenden Substraten ergaben bei niedrigen Dosen gleichfalls einen Anstieg des spezifischen Widerstands. Bei hoheren Dosen fand jedoch ein Umschlag des Leitungstyps von n-Leitung zu p-Leitung statt, gefolgt von einem Abfall des spezifischen Widerstands mit weiter steigender Dosis. Zur Erklarung der experimentellen Ergebnisse wird angenommen, da13 der Anstieg des spezifischen Widerstands im wesentlichen durch Ladungstragerstreuung an ausgedehnten Defekten verursacht wird, wahrend der Widerstandsabfall bei hohen Dosen durch die vorherrschende Erzeugung von Eigendefektakzeptoren bei der Implantation bedingt ist.

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Defect studies in CuB^IIIC chalcopyrite compounds using the ion channeling technique

Neumann¹

1994

Cryst. Res. Technol.

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Based on simple approximations the backscattering minimum yield is estimated for axial ion channeling in perfect crystals of six CuB"'CZ1 chalcopyrite compounds. The results obtained for CuInSe, are compared with experimental channeling spectra. Point defect concentrations up to about loz1 cm13 are estimated for CuInSe, single crystals grown by the vertical Bridgman method. A simple power law is found for the fluence dependence of the damage density in oxygen implanted CuInSe, single crystals.Auf der Grundlage einfacher Naherungen wird die minimale Ruckstreuausbeute fur axiale Ionenkanalisierung in perfekten Kristallen von sechs CuB"'C;'-Chalkopyritverbindungen abgeschatzt. Die fur CuInSe, erhaltenen Resultate werden mit experimentellen Kanalisierungsspektren verglichen. Fur nach der vertikalen Bridgman-Methode gezuchtete CuInSe,-Einkristalle werden Punktdefektkonzentrationen bis zu etwa 10" cm13 abgeschatzt. Fur die Dosisabhangigkeit der Defektdichte in mit Sauerstoff implantierten CuInSe,-Einkristallen wird ein einfaches Potenzgesetz gefunden.

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Deep-level transient spectroscopy of AlGaAs and CuInSe2

Cited by 18 publications

References 5 publications

Low-frequency noise and defects in AlGaAs/InGaAs/GaAs pseudomorphic high-electron mobility transistors

Low-frequency noise and defects in AlGaAs/InGaAs/GaAs pseudomorphic high-electron mobility transistors

Electrical Properties of CuInSe₂ Single Crystals Implanted with Xenon

Defect studies in CuB^IIIC chalcopyrite compounds using the ion channeling technique

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Deep-level transient spectroscopy of AlGaAs and CuInSe2

Cited by 18 publications

References 5 publications

Low-frequency noise and defects in AlGaAs/InGaAs/GaAs pseudomorphic high-electron mobility transistors

Low-frequency noise and defects in AlGaAs/InGaAs/GaAs pseudomorphic high-electron mobility transistors

Electrical Properties of CuInSe2 Single Crystals Implanted with Xenon

Defect studies in CuBIIIC chalcopyrite compounds using the ion channeling technique

Contact Info

Product

Resources

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Electrical Properties of CuInSe₂ Single Crystals Implanted with Xenon

Defect studies in CuB^IIIC chalcopyrite compounds using the ion channeling technique