Deep level transient spectroscopy measurements on Mo/Cu(In,Ga)Se 2 /metal structure

Synthesis, theoretical and experimental characterisation of thin film Cu2Sn1-Ge S3 ternary alloys (x = 0 to 1): Homogeneous intermixing of Sn and Ge

“…The SLG/Mo/CTGS/Al samples are then mounted in an evacuated cryostat at a temperature of 300 K under dark conditions for at least 8 h. After that, C-V measurements are performed using an Agilent E4980A Precision LCR Meter at a frequency of 100 kHz [26]. The apparent doping was extracted from the slope of a Mott-Schottky plot (plot of the inverse squared capacitance 1/C 2 as a function of measured bias voltage V) [27,28].…”