Deep Level Characterization of Submillimeter-Wave GaAs Schottky Diodes Produced by a Novel In-Situ Electrochemical Process

Hashizume, Tamotsu; Hasegawa, Hideki; Suzuki, Takayuki; Grüb, A.; Hartnagel, H.L.

doi:10.1143/jjap.32.486

Cited by 21 publications

(6 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Additionally, it is suitable for both whiskercontacted and planar structures and can be applied without significant modifications. However, in comparison with the electrochemical Schottky metal deposition method, the evaporation method gives a lower barrier height [6,7] and induces a significant amount of point defects in the surface region suspected to be caused by e-beam irradiation [8]. Deep level transient spectroscopy (DLTS) analysis detected deep electron traps with activation energies of 0.08, 0.27 and 0.5eV, which was observed by Hashizume et al [8] in e-beam prepared Schottky diodes.…”

Section: Introductionmentioning

confidence: 93%

“…However, in comparison with the electrochemical Schottky metal deposition method, the evaporation method gives a lower barrier height [6,7] and induces a significant amount of point defects in the surface region suspected to be caused by e-beam irradiation [8]. Deep level transient spectroscopy (DLTS) analysis detected deep electron traps with activation energies of 0.08, 0.27 and 0.5eV, which was observed by Hashizume et al [8] in e-beam prepared Schottky diodes. Additionally, the x-ray photoemission spectroscopy (XPS) revealed an oxide layer and a decomposed GaAs layer at the e-beam Schottky interfaces [9].…”

Section: Introductionmentioning

confidence: 93%

“…The use of electrochemistry turns out to be very efficient for the fabrication of a good Schottky barrier by electrocrystallization of various metals on n-GaAs [4,8,9]. Such a process takes place at low temperature and with a very low kinetic energy of the metal atoms, which allows us to avoid any additional surface damage of the semiconductor surface.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

A new structural approach for uniform sub-micrometer anode metallization of planar THz Schottky components

Cojocari

Mottet

Rodrı́guez-Gironés

et al. 2004

Semicond. Sci. Technol.

View full text Add to dashboard Cite

This paper presents the evaluation of a Schottky contact technology based on electrochemical metal deposition. The results of a long-term systematic investigation and optimization of the anode formation process to improve the yield and performance of Schottky-based GaAs mixer diodes are detailed. Surface preparation prior to the Schottky-metal deposition and anode metallization as previously optimized for whisker-contacted diodes are successfully transferred to the fabrication of planar structures. This uses an auxiliary honeycomb array of anode-like structures called 'dummy anodes', which are processed simultaneously with the real anodes and then removed in the later technological processes. Consequently, the scattering of planar diodes electrical parameters is significantly reduced and the yield of the fabrication process increases from about 5% up to about 50%. Very good dc characteristics such as series resistance (R s ) below 8 , ideality factor (η) below 1.2 and saturation current (I sat ) of the order of 10 −17 A are achieved for the anode diameter as small as 1 µm. An excellent IF-noise figure of 250 K at 4.8 GHz up to 280 K at 2.1 GHz with current bias up to 3 mA is obtained for non-cooled THz mixer planar diodes. The use of this technological approach has enabled the extraction of statistically significant data which have been used to characterize the criticality of each step of the fabrication process on the device performance.

show abstract

Section: Introductionmentioning

confidence: 93%

Section: Introductionmentioning

confidence: 93%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

A new structural approach for uniform sub-micrometer anode metallization of planar THz Schottky components

Cojocari

Mottet

Rodrı́guez-Gironés

et al. 2004

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…Figure 3͑a͒ is for a straight long-channel device with a geometrical channel length L of 11 m and a geometrical channel width W geo of 1.0 m measured at room temperature, and Fig. 5 The maximum transconductance g m is about 23 S for the device in Fig. As compared with the previous MIS-type IPG FET devices fabricated by FIB/RIE techniques, 1-5 the I -V curves of the present de- vices are far better behaved, being free from current fluctuations, kinks, and hysteresis.…”

Section: A I-v Characteristics and Modeling Of Ipg Wire Transistorsmentioning

confidence: 99%

Fabrication and characterization of quantum wire transistors with Schottky in-plane gates formed by an in situ electrochemical process

Hasegawa

1995

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

Self Cite

View full text Add to dashboard Cite

Effects of etch-induced damage on the electrical characteristics of in-plane gated quantum wire transistors Fabrication of a nanoscale, in-plane gated quantum wire by low energy ion exposure J. Vac. Sci. Technol. B 12, 8 (1994); 10.1116/1.587114 In-plane-gated quantum wire transistor fabricated with directly written focused ion beams Novel Schottky in-plane gate ͑IPG͒ quantum wire transistors were fabricated for the first time, and their transport properties were investigated. For fabrication of transistors, an AlGaAs/GaAs quantum well wire ͑QWW͒ was produced by etching, and platinum IPG electrodes were directly formed on both edges of the QWW by a new in situ electrochemical process. The current-voltage ͑I -V͒ characteristics of the fabricated long-channel and short-channel devices exhibited good field effect transistor operation at 3-300 K. Simple theoretical models assuming either a constant mobility or a constant velocity were developed. They provide a reasonably good phenomenological description of the observed I -V characteristics. Limitations of the models are also discussed. At low temperatures, the short-channel device exhibited sharp quantized conductance steps in the units of 2e 2 /h near pinch-off, indicating one-dimensional ballistic quantum transport. The first plateau of the conductance step remained visible up to 40 K, which is the highest reported so far for the AlGaAs/ GaAs system.

show abstract

“…Although the main parameter determining the Schottky-barrier height on GaAs is the Fermi-level pinning, Pt-Schottky contacts have demonstrated the best characteristics in comparison with other metals, e.g. Au, Ti, etc [4][5][6][7]. On the other hand, the use of electrochemistry turns out to be more efficient for the fabrication of a good Schottky barrier on n-GaAs in comparison with the metal evaporation method, which gives lower barrier height and induces a significant amount of point defects [4][5][6][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

DC- and IF-noise performance optimization of GaAs Schottky diodes for THz applications

Cojocari¹,

Biber²,

Mottet³

et al. 2004

Semicond. Sci. Technol.

View full text Add to dashboard Cite

This paper presents results which originated from a long-term systematic optimization of surface processing prior to anode formation of THz Schottky-based components. Particularly, four most promising surface-processing approaches are carefully investigated separately and in combination in order to understand the chemical and physical processes occurring on a GaAs surface. A reliable technological approach for anode formation is identified, which exhibits optimal diode characteristics and production repeatability. A model is proposed for the influence of each process on the subsequent one in the fabrication process sequence. DC-and IF-noise measurements are performed using an automated measurement system providing statistically significant data. Very good dc-parameters such as a series resistance of R s = 15 , an ideality factor N = 1.168, a reverse current I s = 0.024 fA and an IF-noise temperature of 257 K at 1 mA current bias with a good uniformity are achieved for non-cooled Schottky diodes with an anode diameter of 1 µm. The best noise figure is measured to be as low as 220 K at 3.8 GHz and 1 mA current bias.

show abstract

Deep Level Characterization of Submillimeter-Wave GaAs Schottky Diodes Produced by a Novel In-Situ Electrochemical Process

Cited by 21 publications

References 14 publications

A new structural approach for uniform sub-micrometer anode metallization of planar THz Schottky components

A new structural approach for uniform sub-micrometer anode metallization of planar THz Schottky components

Fabrication and characterization of quantum wire transistors with Schottky in-plane gates formed by an in situ electrochemical process

DC- and IF-noise performance optimization of GaAs Schottky diodes for THz applications

Contact Info

Product

Resources

About