Deep etch-induced damage during ion-assisted chemical etching of sputtered indium–zinc–oxide films in Ar/CH4/H2 plasmas

Stafford, L.; Lim, Wantae; Pearton, S. J.; Song, Ju-Il; Park, Jae-Soung; Heo, Young‐Woo; Lee, Joon‐Hyung; Kim, Jeong-Joo; Chicoine, M.; Schiettekatte, F.

doi:10.1016/j.tsf.2007.05.071

Cited by 2 publications

(2 citation statements)

References 41 publications

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“…Although significant changes in the work function were observed before and after etching, a difference of only ∼0.02 eV could be observed under different plasmas. This could be attributed to the fact that the plasma-etching process causes defects on the surface of the thin film, and the presence of these defects increases the energy required to capture electrons and remove them from the surface [34,35].…”

Section: Resultsmentioning

confidence: 99%

Etching characteristics and surface modification of InGaSnO thin films under Cl₂/Ar plasma

Joo

Choi

Hou

et al. 2023

Plasma Sci. Technol.

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Indium gallium tin oxide (IGTO) thin films have the potential for high mobility and low-temperature processing, which makes them suitable for applications such as display backplanes and high-voltage switching devices. However, very few studies have investigated the plasma-etching characteristics of IGTO and changes in its properties after etching. In this study, the etching characteristics of IGTO were investigated using Cl2/Ar plasma, and changes in surface properties were analyzed. Results showed that the etch rate increased with an increase in the proportion of Cl2, with the highest etch rate observed at 69 nm/min in pure Cl2 plasma with a gas flow rate of 100 sccm. Furthermore, increased radio-frequency power caused a rise in the etch rate, while a process pressure of 15 mTorr was optimal. The primary etching mechanism for IGTO thin films under Cl2 plasma was a chemical reaction, and an increased work function indicated the occurrence of defects on the surface. In addition, the etching process reduced the surface roughness of Cl2-containing plasma, whereas the etching process in pure Ar plasma increased surface roughness. This study contributes to a better understanding of the plasma-etching characteristics of IGTO and changes in its properties after etching, providing valuable insights for IGTO-based applications.

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Section: Resultsmentioning

confidence: 99%

Etching characteristics and surface modification of InGaSnO thin films under Cl₂/Ar plasma

Joo

Choi

Hou

et al. 2023

Plasma Sci. Technol.

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“…A variety of charging damage models were reported to understand the mechanisms. [9][10][11]. Plasma damage can be reduced by controlling negative ions [12] or by lowering electron temperature [13].…”

Section: Introductionmentioning

confidence: 99%

Statistical Characterization of Process-Induced Plasma Damage

Kim

Kwon

et al. 2009

Materials and Manufacturing Processes

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During plasma processes, charging damage produces various defects in silicon oxide, thereby deteriorating device performance. Optimizing process-induced charging damage requires a computer model, as well as a quantitative analysis of process parameter effects. In this study, plasma charge damage on threshold voltage of metal-semiconductor field-effect transistors is statistically investigated. This includes the analysis of main and interaction effects of process parameters, as well as the construction of response surface models. Charging damage is characterized by means of a statistical experiment. Four types of statistical regression models are constructed. A model with the largest R-Square (R 2 ) fit of 90.6 is chosen for the response surface analysis. Analysis of the main effects revealed that radio frequency power and gas ratio are the most significant and least significant factors, respectively. Among various interaction terms, only the interaction between radio frequency power and bias is found to be influential. Meanwhile, several conflicting effects are noted as the bias power or gas ratio are varied. An optimized regression model is used to understand parameter effects on plasma charging damage.

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Deep etch-induced damage during ion-assisted chemical etching of sputtered indium–zinc–oxide films in Ar/CH4/H2 plasmas

Cited by 2 publications

References 41 publications

Etching characteristics and surface modification of InGaSnO thin films under Cl₂/Ar plasma

Etching characteristics and surface modification of InGaSnO thin films under Cl₂/Ar plasma

Statistical Characterization of Process-Induced Plasma Damage

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Deep etch-induced damage during ion-assisted chemical etching of sputtered indium–zinc–oxide films in Ar/CH4/H2 plasmas

Cited by 2 publications

References 41 publications

Etching characteristics and surface modification of InGaSnO thin films under Cl2/Ar plasma

Etching characteristics and surface modification of InGaSnO thin films under Cl2/Ar plasma

Statistical Characterization of Process-Induced Plasma Damage

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Product

Resources

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Etching characteristics and surface modification of InGaSnO thin films under Cl₂/Ar plasma

Etching characteristics and surface modification of InGaSnO thin films under Cl₂/Ar plasma