Decomposition of trimethylaluminum on silicon(100)

Gow, T. R.; Lin, Rui‐Biao; Cadwell, Linda A.; Lee, F.; Backman, A. L.; Masel, Richard I.

doi:10.1021/cm00004a006

Cited by 57 publications

(46 citation statements)

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“…We found that partial CHx species remained on the surface at temperatures higher than the In atom desorption temperature [12]. Similar observations were reported for TMA1 and TMGa on Si substrates [16,17]. Clearly, the reaction mechanisms are different in the thermal decomposition of TMIn on Si from that in the InN film deposition process.…”

Section: Discussionsupporting

confidence: 86%

LPCVD of InN on GaAs(110) Using HN₃ and TMIn: Comparison with Si(100) Results

Lin

1993

MRS Proc.

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Low-pressure chemical vapor deposition (LPCVD) of InN and laser-assisted LPCVD on GaAs(l 10) and Si(100) using HN 3 and trimethyl indium (TMIn) has been studied with XPS, UPS and SEM. Without 308-nm excimer laser irradiation, InN film was built on the GaAs but not on Si surface under the present low-pressure conditions. When the photon beam was introduced, InN films with In:N atomic ratio of 1.0-±0.1 and a thickness of more than 20 A (the limit of the electron escaping depth for the In3d X-ray photoelectrons) were formed on Si(100) surface. In both cases, the formation of surface nitrides at the initial film growth processes was clearly indicated in the XP spectra. The He(Il) UP spectra taken from InN films on GaAs and Si are nearly identical and agree well with the result of a pseudo-potential calculation for the InN valence band. The corresponding SEM pictures showed smooth InN films on GaAs(1 10), while grains with diameter of -100 nm were observed for InN on Si(100).

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Section: Discussionsupporting

confidence: 86%

LPCVD of InN on GaAs(110) Using HN₃ and TMIn: Comparison with Si(100) Results

Lin

1993

MRS Proc.

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“…However, this feature is not necessarily a characteristic of the flash-based process, but instead might be attributed to the specific decomposition mechanism of TMA. 57 For comparison, carbon levels up to 20 at-% have been reported for a CVD process utilizing TMA and hydrogen. 59 The influence of the precursor dose on the growth rate was studied by varying the TMA partial pressure in processes with flash energy densities of 40 J/cm 2 (see Fig.…”

Section: Studies On the Flash-enhanced Ald Of Aluminum-based Thin Filmentioning

confidence: 99%

Flash-Enhanced Atomic Layer Deposition: Basics, Opportunities, Review, and Principal Studies on the Flash-Enhanced Growth of Thin Films

Henke

Knaut

Hoßbach

et al. 2015

ECS J. Solid State Sci. Technol.

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Within this work, flash lamp annealing (FLA) is utilized to thermally enhance the film growth in atomic layer deposition (ALD). First, the basic principles of this flash-enhanced ALD (FEALD) are presented in detail, the technology is reviewed and classified. Thereafter, results of our studies on the FEALD of aluminum-based and ruthenium thin films are presented. These depositions were realized by periodically flashing on a substrate during the precursor exposure. In both cases, the film growth is induced by the flash heating and the processes exhibit typical ALD characteristics such as layer-by-layer growth and growth rates smaller than one Å/cycle. The obtained relations between process parameters and film growth parameters are discussed with the main focus on the impact of the FLA-caused temperature profile on the film growth. Similar, substrate-dependent growth rates are attributed to the different optical characteristics of the applied substrates. Regarding the ruthenium deposition, a single-source process was realized. It was also successfully applied to significantly enhance the nucleation behavior in order to overcome substrate-inhibited film growth. Besides, this work addresses technical challenges for the practical realization of this film deposition method and demonstrates the potential of this technology to extend the capabilities of thermal ALD. Atomic layer deposition (ALD) is a specific thin film deposition method wherein film growth is based on a sequence of alternating saturated surface reactions. In a typical ALD process, this is realized by the alternating exposure of the substrate surface to two precursors, which are separated from each other by inert gas purging or chamber evacuation in order to prevent gas phase reactions. As a result, the film growth proceeds in a self-limiting manner and monolayer-by-monolayer, and thus, ALD enables the deposition of thin films with excellent uniformity and conformality as well as with sub-nanometer thickness control. Thanks to these unique characteristics, ALD has emerged as an important thin film deposition technique in semiconductor technology, e.g. in the fabrication of metal-insulator-metal (MIM) film stacks in high aspect ratio dynamic random access memory (DRAM) structures and gate dielectrics in transistors. In recent years, the use of ALD has also expanded into other fields such as optoelectronics, energy conversion and storage devices, micro-electro-mechanical-systems (MEMS) and nanotechnology. [1][2][3][4][5][6] Although a large number of materials have been deposited by ALD so far 1-6 for various applications, there are still a number of challenges in ALD. The deposition temperatures in ALD are mostly lower compared to chemical vapor deposition (CVD) processes due to the different mechanisms of film growth and the necessity to prevent precursor decomposition in order to keep the self-limiting growth behavior of ALD. As a consequence of the lower energy available for film formation, the films may not meet the properties required for the specific...

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“…Similarly, Ga-Si and Al-Si vibrational modes were also not observed in HREEL spectra of TMGa [7] and TMAI [14] on Si substrates. It should be pointed out that the interaction between the In atom and the Si surface may also involve the In 4d electrons as discussed earlier in reference [3].…”

Section: 1mentioning

confidence: 88%