2014
DOI: 10.1016/j.nima.2013.12.048
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Dead layer on silicon p–i–n diode charged-particle detectors

Abstract: Semiconductor detectors in general have a dead layer at their surfaces that is either a result of natural or induced passivation, or is formed during the process of making a contact. Charged particles passing through this region produce ionization that is incompletely collected and recorded, which leads to departures from the ideal in both energy deposition and resolution. The silicon p-i-n diode used in the KATRIN neutrinomass experiment has such a dead layer. We have constructed a detailed Monte Carlo model … Show more

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Cited by 27 publications
(17 citation statements)
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“…A comparison of simulated spectra to photoelectron data taken in Seattle revealed this assumption to be inaccurate: some charge deposited in the dead layer is collected as part of the measured pulse. With this more realistic definition, the dead-layer thickness was found to be 155.4 ± 0.5 stat ± 0.2 sys nm with 46% charge collection [25]. The precision of this measurement, and of the simulation package developed for electron interaction in our detector [26], allows our analysis tools to compensate for the deviation from the original specification.…”
Section: Focal-plane Detectormentioning
confidence: 99%
“…A comparison of simulated spectra to photoelectron data taken in Seattle revealed this assumption to be inaccurate: some charge deposited in the dead layer is collected as part of the measured pulse. With this more realistic definition, the dead-layer thickness was found to be 155.4 ± 0.5 stat ± 0.2 sys nm with 46% charge collection [25]. The precision of this measurement, and of the simulation package developed for electron interaction in our detector [26], allows our analysis tools to compensate for the deviation from the original specification.…”
Section: Focal-plane Detectormentioning
confidence: 99%
“…The large main spectrometer acts as a MAC-E filter, transmitting only electrons with a kinetic energy E above the retarding energy qU (where q is the elementary charge and U is the retarding voltage of the spectrometer). At the end of the beamline a segmented Si-detector with 148 pixels (focal plane detector, FPD [12,13]) counts the number of transmitted electrons as a function of retarding voltages of the main spectrometer. The shape of the integral β-electron spectrum is obtained by counting at a pre-defined set of different retarding voltages.…”
Section: Introductionmentioning
confidence: 99%
“…• 'Investigation of the passage of electrons from vacuum into the active volume of a p-i-n diode charged particle detector' [70]: electron tracking and diffusion in silicon.…”
Section: Validation and Usementioning
confidence: 99%