Dead‐layer effect in silicon detectors: yield spectra of reflected electrons

Abstract

Knowledge of the exact energy deposited of keV and sub-keV electron in solid-state detectors with a dead layer depends strongly on the fraction of electrons backscattered and implanted. A new Monte Carlo (MC) simulation approach has been developed to describe electron scattering processes from silicon. In the present study, we show results concerning yield spectra of backscattered electrons. Backscattered fractions of primary, secondary and total yields are presented together with their energy spectra. Experimental databases of D. C. Joy and original experimental measurements recently made by K. Goto are used for comparison. Good agreement has been found suggesting the use of the present MC code to simulate a solid state silicon detector for low electron energies.

The KATRIN pre-spectrometer at reduced filter energy

“…The electron-H 2 scattering code contains total and differential cross sections [19,20,21,22,23,24,25,26,27] and Monte Carlo generation algorithms for elastic, electronic excitation and ionization collisions of electrons with H 2 molecules [17]. Electron detection, electron energies deposited in the sensitive volume of the silicon detector, the detector dead layer, and electron backscattering at the detector are modeled by a Monte Carlo C++ code (KESS: KATRIN Electron Scattering in Silicon), which is based on detailed studies [28,29,30,31] and agrees well with experimental data [32].…”

Characterization of silicon drift detectors with electrons for the TRISTAN project

“…The 10 nm thick SiO 2 layer is included in this dead layer model. The simulations are performed with the KESS software, which was developed by the KATRIN collaboration specifically to describe scattering of low-energy electrons in silicon [13][14][15][16]36]. Figure 6(b) shows a good agreement of the measured and a MC simulated spectrum.…”