DC plasma enhanced growth of oriented carbon nanowall films by HFCVD

Dikonimos, Theodoros; Giorgi, L.; Giorgi, R.; Lisi, N.; Salernitano, E.; Rossi, Riccardo

doi:10.1016/j.diamond.2006.11.073

Cited by 36 publications

(19 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Wu et al reported that they synthesize carbon nanowalls by microwave plasma CVD [12]. Dikonimos et al grown carbon nanowalls in a hot filament CVD reactor on Si substrate [13]. Marcel et al fabricated carbon nanowalls by atmospheric direct-current plasma enhanced CVD method [14].…”

Section: Introductionmentioning

confidence: 99%

Architecting graphene nanowalls on diamond powder surface

Zou

Bai

et al. 2015

Composites Part B: Engineering

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 99%

Architecting graphene nanowalls on diamond powder surface

Zou

Bai

et al. 2015

Composites Part B: Engineering

View full text Add to dashboard Cite

“…PECVD is a promising candidate for mass production of 2D graphene nanosheets, because of its simplicity and compatibility with traditional semiconductor processes. Moreover it offers a high degree of control 67. Often a traditional catalyst is used as the substrate for their production; however, various reports show pretty much any material can be used, including Si wafers with an oxide surface layer 68.…”

Section: Graphene Synthesismentioning

confidence: 99%

Graphene: Piecing it Together

et al. 2011

View full text Add to dashboard Cite

Graphene has a multitude of striking properties that make it an exceedingly attractive material for various applications, many of which will emerge over the next decade. However, one of the most promising applications lie in exploiting its peculiar electronic properties which are governed by its electrons obeying a 2 linear dispersion relation. This leads to the observation of half integer quantum hall effect and the absence of localization. The latter is attractive for graphene-based field effect transistors.However, if graphene is to be the material for future electronics, then significant hurdles need to be surmounted, namely, it needs to be mass produced in an economically viable manner and be of high crystalline quality with no or virtually no defects or grains boundaries.Moreover, it will need to be processable with atomic precision. Hence, the future of graphene as a material for electronic based devices will depend heavily on our ability to piece graphene together as a single crystal and define its edges with atomic precision. In this progress report, the properties of graphene that make it so attractive as a material for electronics is introduced to the reader. The focus then centers on current synthesis strategies for graphene and their weaknesses in terms of electronics applications are highlighted.

show abstract

“…Graphene [6][7][8] Carbon nanotube * 3,9 Activated carbon [10][11][12] in nanostructure ordering/patterning [32][33][34][35][36] due to the presence of energetic electrons, excited molecules and atoms, free radicals, photons, and other active species in the plasma region. Compared with T-CVD, PECVD growth is more complex.…”

Section: Propertiesmentioning

confidence: 99%

Review—Critical Considerations of High Quality Graphene Synthesized by Plasma-Enhanced Chemical Vapor Deposition for Electronic and Energy Storage Devices

Azam

Zulkapli

Dorah

et al. 2017

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

Graphene is a promising electrode material not only due to its intrinsic properties like good electrical conductivity, high mechanical strength and high chemical stability, but also because of its high theoretical surface area of 2630 m 2 g −1 . In this report, the effect of CVD parameters to the growth of high quality graphene on metal substrates by using plasma enhanced chemical vapor deposition (PECVD) was extensively studied. Interestingly, synthesizing high quality graphene by PECVD technique is not only depending on the CVD parameters, but also depending on the catalysts and its plasma sources. It was found that Ni and Cu are the most favored metal catalysts for PECVD graphene growth. With high solubility of carbon (> 0.1 at. %), Ni effectively promote the growth of multilayer graphene by PECVD. However, large-area synthesis has made relatively inexpensive Cu as one of the most attractive substrates for monolayer graphene growth. Further details on the potential use of different transition metal catalysts in synthesizing graphene and consequently the specific usage of graphene based devices are discussed in this report.

show abstract

DC plasma enhanced growth of oriented carbon nanowall films by HFCVD

Cited by 36 publications

References 11 publications

Architecting graphene nanowalls on diamond powder surface

Architecting graphene nanowalls on diamond powder surface

Graphene: Piecing it Together

Review—Critical Considerations of High Quality Graphene Synthesized by Plasma-Enhanced Chemical Vapor Deposition for Electronic and Energy Storage Devices

Contact Info

Product

Resources

About