DC Magnetron-Sputtered Mo Thin Films with High Adhesion, Conductivity and Reflectance

Ahmed, Nisar; Iqbal, Muhammad Azhar; Khan, Zuhair S.; Qayyum, Ahmed A.

doi:10.1007/s11664-020-08138-2

Cited by 15 publications

(5 citation statements)

References 39 publications

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“…Table 1 summarises the film thickness along with the Scotch tape test findings, which demonstrates the low adherence and the high deposition power rate, which are in line with other reports [ 13 , 32 ]. The grooving and adhesivity tests were carried out immediately after the initial sputtering procedure for all Mo films on SLG.…”

Section: Analysis and Discussionsupporting

confidence: 85%

Probing the Interplay between Mo Back Contact Layer Deposition Condition and MoSe2 Layer Formation at the CIGSe/Mo Hetero-Interface

et al. 2023

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The effect of Mo thin film deposition power in DC sputtering on the formation of a MoSe2 interfacial layer grown via the annealing of CIGSe/Mo precursors in an Se-free atmosphere was investigated. A Mo layer was deposited on glass substrates using the DC magnetron sputtering method. Its electrical resistivity, as well as its morphological, structural, and adhesion characteristics, were analyzed regarding the deposition power. In the case of thinner films of about 300 nm deposited at 80 W, smaller grains and a lower volume percentage of grain boundaries were found, compared to 510 nm thick film with larger agglomerates obtained at 140 W DC power. By increasing the deposition power, in contrast, the conductivity of the Mo film significantly improved with lowest sheet resistance of 0.353 Ω/square for the sample deposited at 140 W. Both structural and Raman spectroscopy outputs confirmed the pronounced formation of MoSe2, resulting from Mo films with predominant (110) orientated planes. Sputtered Mo films deposited at 140 W power improved Mo crystals and the growth of MoSe2 layers with a preferential (103) orientation upon the Se-free annealing. With a more porous Mo surface structure for the sample deposited at higher power, a larger contact area developed between the Mo films and the Se compound was found from the CIGSe film deposited on top of the Mo, favoring the formation of MoSe2. The CIGSe/Mo hetero-contact, including the MoSe2 layer with controlled thickness, is not Schottky-type, but a favourable ohmic-type, as evaluated by the dark I-V measurement at room temperature (RT). These findings support the significance of regulating the thickness of the unintentional MoSe2 layer growth, which is attainable by controlling the Mo deposition power. Furthermore, while the adhesion between the CIGSe absorber layer and the Mo remains intact, the resistance of final devices with the Ni/CIGSe/Mo structure was found to be directly linked to the MoSe2 thickness. Consequently, it addresses the importance of MoSe2 structural properties for improved CIGSe solar cell performance and stability.

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Section: Analysis and Discussionsupporting

confidence: 85%

Probing the Interplay between Mo Back Contact Layer Deposition Condition and MoSe2 Layer Formation at the CIGSe/Mo Hetero-Interface

et al. 2023

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“…One of the conventional techniques to deposit molybdenum on an SLG substrate is DC magnetron sputtering. Previously, Mo was deposited with different parameters in refs. − . Mo was deposited at various power levels (100 to 350 W), working pressures (1 to 20 Pa), and substrate temperatures (room temperature, 300 and 400 °C).…”

Section: Introductionmentioning

confidence: 99%

“…Moreover, peak intensity also rises with higher DC sputtering power, signifying more robust crystallization in the associated direction at elevated power levels. 28 Post-deposition treatment (PDT) was carried out after sputtering of Mo to enhance a few properties of the material. There are different PDTs, such as vacuum annealing, plasma treatment, and so on.…”

Section: Introductionmentioning

confidence: 99%

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Revealing the Subtle Role of DC-Sputtered Mo Back Contact Work Function in Mitigating the Detrimental Effects of the MoS₂/MoSe₂ Interfacial Layer in Kesterite-Based Thin Film Solar Cells

Putthisigamany,

Rahman,

Sapeli

et al. 2024

Energy Fuels

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Due to thermal robustness and chemical stability at high working temperatures during photo-absorber layer deposition, molybdenum (Mo) is favored as the back electrode material in chalcogenide-based thin film photovoltaic devices. However, the unintentional formation of an interfacial layer between Mo and the absorber layer adversely affects the deviceperformance. In addition, the lower work function of Mo compared to the semiconductor work function of other emerging p-type chalcogenide absorber layer materials results in low open-circuit voltage caused by the inhibition of the hole-transport process at the back contact interface. Therefore, efforts toward the enhancement of the work function of Mo thin film are imperative to improve the device performance. In this research, the impact of post-deposition heat treatment in vacuum condition at 580 °C on the microstructural, electronic, electrical, and morphological properties of DCsputtered Mo thin films was studied. It was shown that vacuum annealing improves the microstructural properties, which in turn promotes better surface topology and electron conduction mechanism. More importantly, the work function of the Mo thin film was increased up to 5.05 eV after vacuum annealing. The obtained experimental work function of 5.05 eV was employed in numerical simulation study through SCAPS-1D to highlight the critical role of work function of Mo in reducing the negative impact of the MoS 2 /MoSe 2 interfacial layer in terms of open-circuit voltage (V oc ), short-circuit current (J sc ), fill factor (FF), and efficiency (PCE) of CZTS/CZTSe devices. Based on the simulation results, Mo with a work function of 4.6 eV (average for a polycrystalline Mo) results in efficiency of around 15% for both CZTS and CZTSe devices, which was modeled together with low-quality interfacial layer (low carrier mobility and high defect density). However, Mo with a work function of 5.05 eV results in improved efficiency of 19% and 23% for CZTS and CZTSe devices, respectively. Hence, the approach of enhancing the Mo back contact work function is shown as a plausible pathway to enhance the overall performance of the photovoltaic device despite the formation of a detrimental interfacial layer.

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“…This can be done by employing various kinds of doping such as metal doping, nonmetal doping, doping of rare-earth metals, or their combinations [5]. Using different kinds of dopings, varying doping concentrations, and using numerous synthesis techniques, the conductivity, charge mobility, and photocurrent can be increased [6][7][8].Efficiencies for different kinds of metal and co-metal doping are summarized in table 1. Rajamanickam (2020) [9] Sr doping in TiO2 0.78 18.53 9.6 Hao Huy Nguyen (2020) [10] Cr-doped TiO2 0.69 18.75 7.5 Junmei Sun (2019) [11] Ag-doped TiO2 0.812 11.24 6.36…”

Section: Introductionmentioning

confidence: 99%

Electrospinning of Cu Doped TiO<sub>2</sub> Nanofibers and their Potential Application in Photoanode of Dye-Sensitized Solar Cells

Qasim

Khan

Satti

et al. 2022

Advances in Science and Technology

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Titania (TiO2) is an important material having found its use in many technological applications. Due to its large surface-to-volume ratio, TiO2 nanofibers (NFs) are drawing increased attention in 3rd generation photovoltaics. The electro-optical response of TiO2 can be tuned by metal doping and structural control at the nano level. In this research, NFs of copper (Cu) doped Titania (TiO2) were fabricated by using electrospinning. To do away with Polyvinylpyrrolidone (PVP), the NFs were calcined and annealed in air at 500°C for 2 hours. The Energy-Dispersive X-ray Spectroscopy (EDS) results confirmed the doping of copper inside the titania after calcination. Scanning Electron Microscopy (SEM) results show NFs of varying diameters mostly in the 80 nm to 200 nm regime. SEM of the post-annealed samples shows relatively rougher fibers of reduced size compared to the uncalcined samples. The increase in roughness and reduction in the NFs diameter means an increase in the overall surface area and more efficient charge transport as Hall effect measurement results depicted that after doping of copper in nanofibers, the conductivity improved by 2 times as compared to undoped nanofibers of titania. Moreover, Ultraviolet-visible Spectroscopy (UV-Vis) showed Cu doping shifted the absorption of the spectrum.

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DC Magnetron-Sputtered Mo Thin Films with High Adhesion, Conductivity and Reflectance

Cited by 15 publications

References 39 publications

Probing the Interplay between Mo Back Contact Layer Deposition Condition and MoSe2 Layer Formation at the CIGSe/Mo Hetero-Interface

Probing the Interplay between Mo Back Contact Layer Deposition Condition and MoSe2 Layer Formation at the CIGSe/Mo Hetero-Interface

Revealing the Subtle Role of DC-Sputtered Mo Back Contact Work Function in Mitigating the Detrimental Effects of the MoS₂/MoSe₂ Interfacial Layer in Kesterite-Based Thin Film Solar Cells

Electrospinning of Cu Doped TiO<sub>2</sub> Nanofibers and their Potential Application in Photoanode of Dye-Sensitized Solar Cells

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DC Magnetron-Sputtered Mo Thin Films with High Adhesion, Conductivity and Reflectance

Cited by 15 publications

References 39 publications

Probing the Interplay between Mo Back Contact Layer Deposition Condition and MoSe2 Layer Formation at the CIGSe/Mo Hetero-Interface

Probing the Interplay between Mo Back Contact Layer Deposition Condition and MoSe2 Layer Formation at the CIGSe/Mo Hetero-Interface

Revealing the Subtle Role of DC-Sputtered Mo Back Contact Work Function in Mitigating the Detrimental Effects of the MoS2/MoSe2 Interfacial Layer in Kesterite-Based Thin Film Solar Cells

Electrospinning of Cu Doped TiO<sub>2</sub> Nanofibers and their Potential Application in Photoanode of Dye-Sensitized Solar Cells

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Revealing the Subtle Role of DC-Sputtered Mo Back Contact Work Function in Mitigating the Detrimental Effects of the MoS₂/MoSe₂ Interfacial Layer in Kesterite-Based Thin Film Solar Cells